Abstract: The present invention relates to compounds of formula (I): wherein R1 to R3, A, X and n are as defined herein. The compounds of formula (I) are useful as inhibitors of leukotriene A4 hydrolase (LTA4H) and treating LTA4H related disorder. The present invention also relates to pharmaceutical compositions comprising the compounds of formula (I), methods of using these compounds in the treatment of various diseases and disorders, and processes for preparing these compounds.

Abstract: The present invention relates to compounds of formula (I): wherein R1 to R3, A, X and n are as defined herein. The compounds of formula (I) are useful as inhibitors of leukotriene A4 hydrolase (LTA4H) and treating LTA4H related disorder. The present invention also relates to pharmaceutical compositions comprising the compounds of formula (I), methods of using these compounds in the treatment of various diseases and disorders, and processes for preparing these compounds.

Abstract: The present invention relates to compounds of formula (I): wherein R1 to R3, A, X and n are as defined herein. The compounds of formula (I) are useful as inhibitors of leukotriene A4 hydrolase (LTA4H) and treating LTA4H related disorder. The present invention also relates to pharmaceutical compositions comprising the compounds of formula (I), methods of using these compounds in the treatment of various diseases and disorders, and processes for preparing these compounds.

Abstract: In a method for the production of a membrane electrode assembly comprising a membrane, electrodes and a catalyst, the catalyst is pressed into the membrane material, e.g. when forming the material in situ.

Abstract: A method of manufacturing a semiconductor device comprises depositing a semiconductor layer over a semiconductor surface having at least one first region with a first (average surface lattice) parameter value and at least one second region having a second parameter value different from the first. The semiconductor layer is deposited to a thickness so self-organized islands form over both the first and second regions. The difference in the parameter value means the islands over the first region have a first average parameter value and the islands over the second region have a second average parameter value different from the first. A capping layer is deposited over islands and has a greater forbidden bandgap than the islands whereby the islands form quantum dots, which have different properties over the first and second regions due to difference(s) between the first and second region islands.

Abstract: Instant messaging (IM) is provided between a TDD/TTY user and an entity. The user may use a TDD device to initiate a call with the entity. One or more converters may convert a TDD message from the user's device to IM, which is then provided to a recipient of the call, such as a representative of a company. The converter(s) may also convert IM from the representative into a TDD message that may then be provided to the user on the TDD device.

Abstract: A particle having an alpha alumina crystalline phase, a non-alpha alumina crystalline phase and titania is disclosed. The particles are useful as catalyst carriers. A process for making the particles is also disclosed.

Abstract: The present invention relates to compounds of formula (I): and pharmaceutically acceptable salts thereof, wherein R1 and R2 are as defined herein. The invention also relates to pharmaceutical compositions comprising these compounds, methods of using these compounds in the treatment of various diseases and disorders, processes for preparing these compounds and intermediates useful in these processes.

Abstract: Disclosed is a compound of formula (I). Wherein R1, R2Ar and Cy are as defined herein, or a pharmaceutically acceptable salt thereof. Also disclosed are pharmaceutical compositions of the compound of formula (I), methods of making the compounds of formula I, and methods of using the compounds of formula (I) to treat a disorder associated with activation of CCR10.

Abstract: Disclosed are compounds and compositions of the formula (I) as described herein which are inhibitors of MMP-13. Also disclosed are methods of using and making compounds of the formula (I).

Abstract: This invention relates to a compound of formula (I) and the pharmaceutically acceptable salts thereof wherein R1, R2, R4. Ar and Het are as defined herein. The invention also relates to methods of using the compound of formula (I) to treat a diseases and disorders that are mediated or sustained through the activity of CCR10.

Abstract: Disclosed are compounds and compositions of the formula I as described herein which are inhibitors of MMP-13. Also disclosed are methods of using and making compounds of the formula I.

Abstract: A photovoltaic cell comprises a membrane electrode assembly obtainable by the in situ polymerisation between two electrodes of one or more monomers to form a polymer, and then infusing an activating agent into the polymer, wherein the activating agent enables the membrane electrode assembly to function as a photovoltaic cell.

Abstract: A nitride semiconductor device comprises: a layer structure including an active region (102) containing AlxGayIn1-x-yN quantum dots layers (102a), and means (104a,104b) for applying an electric field across the active region to modify the spin orientation of excitons in the quantum dots. The exciton spin lifetime at 300K is, for at least a range of values of the electric field applied across the active region, at least 1 ns, more preferably at least 10 ns, and particularly preferably at least 15 ns or 20 ns. These lifetimes may be obtained by configuring the device such that the exciton binding energy is, for at least a range of values of the electric field applied across the active region, 25 meV or greater.

Abstract: A semiconductor light-emitting device fabricated in the (Al,Ga,In)N materials system has an active region for light emission (3) comprising InGaN quantum dots or InGaN quantum wires. An AlGaN layer (6) is provided on a substrate side of the active region. This increases the optical output of the light-emitting device. This increased optical output is believed to result from the AlxGa1-xN layer serving, in use, to promote the injection of carriers into the active region.

Abstract: A membrane-electrode assembly includes a grid for controlling ion flow, separate layers of membrane material and/or an ionically inactive material for the transmission of a liquid or gaseous reaction component to end/or form at least one of the electrodes.

Abstract: A multijunction photovoltaic structure includes a first subcell including a p-n or p-i-n junction with elongated structures; and a second subcell, arranged in tandem with the first subcell, and including a planar p-n or p-i-n junction.

Abstract: A flexible MEA comprises an integral assembly of electrode, catalyst and ionomeric membrane material.

Abstract: A photon source includes a substrate, an active region formed above the substrate, and a pair of electrodes configured to provide an injection current which passes through the active region. The active region includes a quantum dot layer including one or more AlyGaxIn1-x-yN quantum dots, where 0?x?1 and 0?y?<1, and an AlInN current confinement layer adjacent the quantum dot layer. The current confinement layer has an aperture which defines a low resistance path for the injection current to flow through the active region between the pair of electrodes. The quantum dot layer includes less than 50 quantum dots within the aperture as projected onto the quantum dot layer.

Abstract: A semiconductor device includes an AlxGayIn1-x-yN layer and (Al,Ga,In)N quantum dots disposed on the AlxGayIn1-x-yN layer, wherein the indium fraction in the AlxGayIn1-x-yN layer is non-zero (1-x-y?0).