Abstract: An electrochemical cell comprises at least the following layers stacked in the following order: a first electrode layer, an electrolyte layer, a second electrode layer, a current collector layer, and a protective cover; the protective cover comprising an electrically-insulating material. The cell further comprises an electrically-conductive contact pad that is configured to enable connection of the cell to external devices, the contact pad being provided on an external side of the protective cover that is opposed to the current collector layer, and comprising an exposed surface that is bounded about its perimeter by the electrically-insulting material. An electrically-conductive pathway is provided between the contact pad and the current collector layer, the electrically-conducive pathway extending through the protective cover and contacting a face of the current collector layer at a connection site.

Abstract: The present invention provides a vapour deposition method for preparing an amorphous lithium borosilicate or doped lithium borosilicate compound, the method comprising: providing a vapour source of each component element of the compound, wherein the vapour sources comprise at least a source of lithium, a source of oxygen, a source of boron, and a source of silicon, and, optionally, a source of at least one dopant element; delivering a flow of said lithium, said oxygen, said boron and said silicon, and, optionally, said dopant element; and co-depositing the component elements from the vapour sources onto a substrate wherein the component elements react on the substrate to form the amorphous compound; wherein the amorphous lithium borosilicate or doped lithium borosilicate ompound has a lithium content in the range 40-65 atomic %, based on the combined atomic percentages of lithium, boron and silicon.

Abstract: A method is provided for fabricating a component material for a battery cell.

Abstract: A method of processing a stack of layers to provide a stack of discrete layer elements, comprises the steps of: providing a stack of layers comprising: #a first layer (20) provided by a first material; #a third layer (16) provided by a solid electrolyte; and #a second layer (18) located between the first and third layers, the second layer having a thickness of at least 500 nm and being provided by a second material comprising at least 95 atomic % amorphous silicon; removing a through-thickness portion of the first layer (20) to form a first discrete layer element (20a) provided by the first material; removing a through-thickness portion of the second layer (18) to form a second discrete layer element (18a) provided by the second material, the second discrete layer element being located between the first discrete layer element (20a) and the solid electrolyte; and etching the third layer (16) using the second discrete layer element (18a) as an etching mask, to form a third discrete layer element (16a) provided

Abstract: Provided is a composition comprising: (a) a principal phase that is provided by a layered mixed metal oxide having a rocksalt structure belonging to the R-3m space group; the layered mixed metal oxide comprising the following component elements: 45 to 55 atomic % lithium; 20 to 55 atomic % of one or more transition metals selected from the group consisting of chromium, manganese, iron, nickel, cobalt, and combinations thereof; and 0 to 25 atomic % of one or more additional dopant elements selected from the group consisting of: magnesium, calcium, strontium, titanium, zirconium, vanadium, copper, ruthenium, zinc, molybdenum, boron, aluminium, gallium, tin, lead, bismuth, lanthanum, cerium, gadolinium and europium; wherein said atomic % is expressed as a % of total atoms of said layered oxide, excluding oxygen; (b) a minor phase that is provided by a metal oxide that does not have the crystal structure of the layered mixed metal oxide, the minor phase comprising one or more of the transition metals contained in

Abstract: A method of processing a thin film structure comprising: providing a thin film structure comprising a stack of two or more thin film layers supported on a surface of a substrate, the stack having a depth orthogonal to the substrate surface; and forming a cut through the depth of the stack by using a direct write laser technique to scan a laser beam along a scan path covering an area of a desired cut line on a surface of the stack to ablate material of the stack along the cut line and through the depth of the stack at least to the surface of the substrate; wherein the direct write laser technique is implemented using an ultrashort pulsed laser outputting pulses with a duration of 1000 femtoseconds or less, at a wavelength in the range of 100 to 1500 nm, and delivering a fluence in the range of 50 to 100,000 mJ/cm2

Abstract: A gas turbine engine comprises a compressor driven by a shaft, and a reference starting schedule, the compressor having a reference stability boundary, with the reference starting schedule defining a reference working line. A method of starting the gas turbine engine is described in which the method comprises the steps of: (i) accelerating the rotational speed of the shaft towards an engine idle speed; (ii) defining for the compressor, as the rotational speed increases, an operational working line; and (iii) modifying at least one operating parameter of the gas turbine engine as the rotational speed increases such that for a rotational speed, an operational working line is closer to the reference stability boundary than the reference working line is to the reference stability boundary.

Abstract: A gas turbine engine comprises a compressor driven by a shaft, and a reference starting schedule, the compressor having a reference stability boundary, with the reference starting schedule defining a reference working line. A method of starting the gas turbine engine is described in which the method comprises the steps of: (i) accelerating the rotational speed of the shaft towards an engine idle speed; (ii) defining for the compressor, as the rotational speed increases, an operational working line; and (iii) modifying at least one operating parameter of the gas turbine engine as the rotational speed increases such that for a rotational speed, an operational working line is closer to the reference stability boundary than the reference working line is to the reference stability boundary.

Abstract: There are provided according to the invention compounds of formula (I) in free or salt form, wherein R1, R2, R3, R4, R5, R6, Q, W, X, m, n and p are as described in the specification, process for preparing them, and their use as pharmaceuticals.

Abstract: There are provided according to the invention compounds of formula (I) in free or salt form, wherein R1, R2, R3, R4, R5, R6, Q, W, X, m, n and p are as described in the specification, process for preparing them, and their use as pharmaceuticals.

Abstract: There are provided according to the invention compounds of formula (I) in free or salt form, wherein R1, R2, R3, R4, R5, R6, Q, W, X, m, n and p are as described in the specification, process for preparing them, and their use as pharmaceuticals.

Abstract: There are provided according to the invention compounds of formula (I) in free or salt form, wherein R1, R2, R3, R4, R5, R6, Q, W, X, m, n and p are as described in the specification, process for preparing them, and their use as pharmaceuticals.

Abstract: There are provided according to the invention compounds of formula (I), in free or salt form, wherein R1, R2, R3, R4, R5, R6, Q, W, X, m, n and p are as described in the specification, process for preparing them, and their use as pharmaceuticals.

Abstract: There are provided according to the invention compounds of formula (I), in free or salt form, wherein R1, R2, R3, R4, R5, R6, Q, W, X, m, n and p are as described in the specification, process for preparing them, and their use as pharmaceuticals.

Abstract: There are provided according to the invention compounds of formula (I), in free or salt form, wherein R1, R2, R3, R4, R5, R6, Q, W, X, m, n and p are as described in the specification, process for preparing them, and their use as pharmaceuticals.

Abstract: There are provided according to the invention compounds of formula (I), in free or salt form, wherein R1, R2, R3, R4, R5, R6, Q, W, X, m, n and p are as described in the specification, process for preparing them, and their use as pharmaceuticals.

Abstract: Compounds of formula I in free or salt form, wherein —C—Y—, R1 and R2 are G have the meanings as indicated in the specification, are useful for treating conditions that are prevented or alleviated by activation of the ?2-adrenoreceptor. Pharmaceutical compositions that contain the compounds and a process for preparing the compounds are also described.

Abstract: There are provided according to the invention compounds of formula (I), in free or salt form, wherein R1, R2, R3, R 4, R5, R6, Q, W, X, m, n and p are as described in the specification, process for preparing them, and their use as pharmaceuticals.

Abstract: A compound of formula (I); in free or pharmaceutically acceptable salt form, where R1, R2, R3, R4, R5, m, n, w, X, Y and Q have the meanings as indicated in the specification, are useful for treating conditions mediated by the CRTh2 receptor, especially inflammatory or obstructive airways diseases.

Abstract: There are provided according to the invention compounds of formula (I) in free or salt form, wherein R<1>, R<2>, R<3>, X, Y, Z, m, and n are as described in the specification, process for preparing them, and their use as pharmaceuticals.