Patents by Inventor Louison Tan

Louison Tan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and system for automatically determining electrical properties of a semiconductor wafer or sample
    Patent number: 7295022
    Abstract: In a method and apparatus for determining one or more electrical properties of a semiconductor wafer or sample, the response of a semiconductor wafer or sample to an applied CV-type electrical stimulus is measured. Utilizing a recursive technique, progressively more accurate values of equivalent oxide thickness CET, maximum capacitance Cox, flatband voltage Vfb and other properties of the semiconductor wafer or sample are determined from the measured response. An equivalent oxide thickness EOT of the semiconductor wafer or sample can be determined as a function of the most accurate value of CET determined based upon convergence of at least one of (1) the last two values of Cox or (2) the last two values of Vfb within a predetermined convergence criteria. One or more of the EOT value and/or values of one or more of CET, Cox or Vfb can then be output in a human detectable form.
    Type: Grant
    Filed: August 31, 2005
    Date of Patent: November 13, 2007
    Assignee: Solid State Measurements, Inc.
    Inventors: Robert J. Hillard, Louison Tan
  • Method and system for automatically determining electrical properties of a semiconductor wafer or sample
    Publication number: 20070046310
    Abstract: In a method and apparatus for determining one or more electrical properties of a semiconductor wafer or sample, the response of a semiconductor wafer or sample to an applied CV-type electrical stimulus is measured. Utilizing a recursive technique, progressively more accurate values of equivalent oxide thickness CET, maximum capacitance Cox, flatband voltage Vfb and other properties of the semiconductor wafer or sample are determined from the measured response. An equivalent oxide thickness EOT of the semiconductor wafer or sample can be determined as a function of the most accurate value of CET determined based upon convergence of at least one of (1) the last two values of Cox or (2) the last two values of Vfb within a predetermined convergence criteria. One or more of the EOT value and/or values of one or more of CET, Cox or Vfb can then be output in a human detectable form.
    Type: Application
    Filed: August 31, 2005
    Publication date: March 1, 2007
    Applicant: Solid State Measurements, Inc.
    Inventors: Robert Hillard, Louison Tan