Abstract: An etching solution for a metal hard mask. The etching solution comprises a mixture of a dilute HF (hydrofluoric acid) and a silicon containing precursor. The etching solution also comprises a surfactant agent, a carboxylic acid, and a copper corrosion inhibitor. The etching solution is selectively toward etching the metal hard mask material (e.g., Titanium) while suppressing Tungsten, Copper, oxide dielectric material, and carbon doped oxide.

Abstract: An etching solution for a metal hard mask. The etching solution comprises a mixture of a dilute HF (hydrofluoric acid) and a silicon containing precursor. The etching solution also comprises a surfactant agent, a carboxylic acid, and a copper corrosion inhibitor. The etching solution is selectively toward etching the metal hard mask material (e.g., Titanium) while suppressing Tungsten, Copper, oxide dielectric material, and carbon doped oxide.

Abstract: An etching solution for a metal hard mask. The etching solution comprises a mixture of a dilute HF (hydrofluoric acid) and a silicon containing precursor. The etching solution also comprises a surfactant agent, a carboxylic acid, and a copper corrosion inhibitor. The etching solution is selectively toward etching the metal hard mask material (e.g., Titanium) while suppressing Tungsten, Copper, oxide dielectric material, and carbon doped oxide.

Abstract: An etching solution for a metal hard mask. The etching solution comprises a mixture of a dilute HF (hydrofluoric acid) and a silicon containing precursor. The etching solution also comprises a surfactant agent, a carboxylic acid, and a copper corrosion inhibitor. The etching solution is selectively toward etching the metal hard mask material (e.g., Titanium) while suppressing Tungsten, Copper, oxide dielectric material, and carbon doped oxide.

Abstract: A cleaning liquid which comprises at least one selected from potassium hydroxide or sodium hydroxide in an amount of 0.01 to 10% by weight, water-soluble organic solvent in an amount of 5 to 80% by weight, a corrosion inhibitor at least one selected from the group consisting of group IX metal of the Periodic Table, group IX metal alloy and group XI metal of the Periodic Table in an amount of 0.0001% by weight and water. The present provides a cleaning liquid and a cleaning method both capable of removing photoresists or its deposits and attached articles on the surface of treated substances such as organosiloxane-based anti-reflection film, configuration protective coat or so without corroding the treated substances, particularly low dielectric constant film, group IX metals of the Periodic Table and their alloy, and group XI metals of the Periodic Table.

Abstract: Ion exchange resin composite fibers include a substrate fiber, and an ion exchange resin, on the substrate fiber. The ion exchange resin composite fibers exhibit greatly increased kinetic rates of reaction and regeneration.

Abstract: A composite, contains substrate fibers, and carbon ion exchanger, on the substrate fibers. The fiber provides a support to the carbon ion exchanger, resulting in excellent mechanical properties, compared to carbon fiber ion exchangers.