Patents by Inventor lsao MAKABE

lsao MAKABE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF FORMING THE SAME
    Publication number: 20170271496
    Abstract: A High Electron Mobility Transistor (HEMT) made of nitride semiconductor materials and a process of forming the same are disclosed. The HEMT has a feature that an n-type layer doped with n-type dopants is provided between the buffer layer and the channel layer. The existence of the n-type layer with a substantial conductance beneath the channel layer suppresses the current collapsing and enhances the surface quality of the channel layer in spite of a thinned channel layer.
    Type: Application
    Filed: March 15, 2017
    Publication date: September 21, 2017
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Ken NAKATA, Tsuyoshi KOUCHI, lsao MAKABE, Keiichi YUi