Abstract: According to one embodiment, a radiation detector includes a first layer including a metal complex, a first conductive layer, a second conductive layer provided between the first layer and the first conductive layer, and an organic semiconductor layer provided between the first conductive layer and the second conductive layer.

Abstract: According to one embodiment, a radiation detector includes a first conductive layer, a second conductive layer, and a first layer. The first layer is provided between the first conductive layer and the second conductive layer. The first layer includes a first region and a second region. The first region includes a metal complex including a first metallic element. The second region includes an organic semiconductor material. The first metallic element includes at least one selected from the group consisting of Ir, Pt, Pb, and Cu.

Abstract: A radiation detector includes a first scintillator, a second scintillator, a first photoelectric conversion layer, and a second photoelectric conversion layer. The first scintillator converts ? rays into first scintillation light. The second scintillator converts the ? rays into second scintillation light. The first photoelectric conversion layer is provided between the first scintillator and the second scintillator and converts the first scintillation light into electric charges. The second photoelectric conversion layer is provided between the first photoelectric conversion layer and the second scintillator and converts the second scintillation light into electric charges. The first scintillator, the second scintillator, the first photoelectric conversion layer, and the second photoelectric conversion layer are each formed with an organic material as a main component. The thickness of the second scintillator is larger than the thickness of the first scintillator.

Abstract: According to an embodiment, a detection element includes a first electrode, a second electrode, an organic conversion layer, and a third electrode. The organic conversion layer is provided between the first electrode and the second electrode, and is configured to convert energy of a radiant ray into a charge. The third electrode is provided inside the organic conversion layer. Bias is applied to the third electrode.

Abstract: According to one embodiment, a photoelectric conversion element includes a first conductive layer, a second conductive layer, an organic semiconductor layer, and a first region. The first conductive layer includes a first metal. The organic semiconductor layer is provided between the first conductive layer and the second conductive layer. The first region includes the first metal and oxygen and is positioned between the organic semiconductor layer and the first conductive layer.

Abstract: A compound of the embodiment includes the structure represented by the following general formula (1). In the general formula (1), R1 to R4 respectively independently represent a hydrogen atom, a linear or branched alkyl group, a fluoroalkyl group, or an aryl group.

Abstract: According to an embodiment, a semiconductor device includes a silicon substrate, a photoelectric conversion layer, a termination layer, and an electrode layer. In the silicon substrate, first semiconductor regions and second semiconductor regions are alternately arranged along a first surface on a light incident side of the silicon substrate. The first semiconductor regions are doped with impurities of first concentration and have a conductivity of either one of p-type and n-type. The second semiconductor regions are doped with impurities of a second concentration lower than the first concentration and have a conductivity of the other type. The photoelectric conversion layer is disposed on a first surface side of the silicon substrate. The termination layer is disposed between the silicon substrate and the photoelectric conversion layer, in contact with the first surface, and to terminate dangling bonds of the silicon substrate. The electrode layer is provided on the light incident side.