Abstract: An apparatus and a method for calibrating the position of a wafer platform in an ion implanter, and particularly in a medium current ion implanter. The apparatus is constructed by a curvilinear piece formed in a half-circular shape, a pair of linear rods for supporting the curvilinear piece, and at least one cross-bracing rod connected in-between the pair of linear rods for providing rigidity of the apparatus. When the inside peripheral surface of the curvilinear piece intimately engages an outside peripheral surface of the wafer platform of the ion implanter, or when the first and second linear rods fit snugly on the implanter indicative that the wafer platform is properly calibrated at a zero-angle position. When such fitting is not possible, the wafer platform is then adjusted until a snug fitting is made possible.

Abstract: A gaseous supply system and method for operating the same is disclosed for supplying at least one gaseous source material to an ion source chamber for use with an ion implanter including at least one gas supply module in gaseous communication with an ion source chamber including at least one pneumatic valve to control the delivery of at least one gaseous source material to the ion source chamber for generation of source material ions for implantation including a driver gas source in communication with said at least one pneumatic valve for operating the at least one pneumatic valve said driver gas source having a different atomic mass unit than the source material ions for implantation generated from the at least one gaseous source material.

Abstract: An apparatus and a method for calibrating the position of a wafer platform in an ion implanter, and particularly in a medium current ion implanter. The apparatus is constructed by a curvilinear piece formed in a half-circular shape, a pair of linear rods for supporting the curvilinear piece, and at least one cross-bracing rod connected in-between the pair of linear rods for providing rigidity of the apparatus. When the inside peripheral surface of the curvilinear piece intimately engages an outside peripheral surface of the wafer platform of the ion implanter, or when the first and second linear rods fit snugly on the implanter indicative that the wafer platform is properly calibrated at a zero-angle position. When such fitting is not possible, the wafer platform is then adjusted until a snug fitting is made possible.

Abstract: A method for reducing a dinitrogen (N2) ion concentration in an ion implanter including providing an ion implanter having an ion source chamber for producing source ions said ion source chamber surrounded by a plurality of source magnets having a current supply for altering a position of said source ions; providing a gaseous source of material to the ion source chamber for ionization thereby creating a supply of source ions for implantation; creating a supply of source ions to include dinitrogen (N2) ions and nitrogen (N) ions supplied for implantation; and, increasing a current supply to at least one of the plurality of source magnets such that a ratio of dinitrogen (N2) ions to nitrogen (N) ions supplied for implantation is reduced.

Abstract: A method for reducing a dinitrogen (N2) ion concentration in an ion implanter including providing an ion implanter having an ion source chamber for producing source ions said ion source chamber surrounded by a plurality of source magnets having a current supply for altering a position of said source ions; providing a gaseous source of material to the ion source chamber for ionization thereby creating a supply of source ions for implantation; creating a supply of source ions to include dinitrogen (N2) ions and nitrogen (N) ions supplied for implantation; and, increasing a current supply to at least one of the plurality of source magnets such that a ratio of dinitrogen (N2) ions to nitrogen (N) ions supplied for implantation is reduced.

Abstract: A gaseous supply system and method for operating the same is disclosed for supplying at least one gaseous source material to an ion source chamber for use with an ion implanter including at least one gas supply module in gaseous communication with an ion source chamber including at least one pneumatic valve to control the delivery of at least one gaseous source material to the ion source chamber for generation of source material ions for implantation including a driver gas source in communication with said at least one pneumatic valve for operating the at least one pneumatic valve said driver gas source having a different atomic mass unit than the source material ions for implantation generated from the at least one gaseous source material.