Patents by Inventor Lu-Fu Liao

Lu-Fu Liao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of detecting abnormal chamber conditions in etcher
    Publication number: 20030209518
    Abstract: A method for detecting abnormal conditions in an etching chamber for semiconductors. A plasma intensity control standard or calibration curve is first obtained for the optimal etching of semiconductors in a particular application, in which the plasma intensity profile for optimal etching characteristics is plotted against elapsed etching time in seconds. Subsequent semiconductors are etched according to the optimum plasma intensity generated from the control or calibration curve to facilitate optimum integrated circuit quality, wafer throughput and processing efficiency.
    Type: Application
    Filed: May 8, 2002
    Publication date: November 13, 2003
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Lu-Fu Liao, Tsai-Yi Chen