Abstract: Examples of the present application disclose a memory device and operating method thereof, a memory system and operating method thereof, wherein the memory device includes: an array of memory cells; peripheral circuit coupled to the array of memory cells and configured to: obtain the first state corresponding to at least one code word formed by a preset number of memory cells at the target read voltage; perform multiple adjustments to the target read voltage, and obtain a first state corresponding to the at least one of the code words at the read voltage after each of the adjustments respectively; determine a valley voltage in accordance with a variation trend of the relationship of size between the number of flipped bits and the first preset value indicated by a plurality of the obtained first states.

Abstract: According to one aspect of the present disclosure, a memory device is provided. The memory device may include an array of memory cells, including a plurality of memory cells. A preset number of memory cells form a code word. The memory device may include peripheral circuit coupled to the array of memory cells. The peripheral circuit may be configured to obtain the first result corresponding to the code word at the target read voltage. The peripheral circuit may be configured to adjust the target read voltage in accordance with the first result corresponding to the code words at the target read voltage. The peripheral circuit may be configured to obtain the first result corresponding to the code words at the adjusted read voltage. The peripheral circuit may be configured to determine a valley voltage in accordance with a plurality of the first results.

Abstract: An example of the present application discloses a memory device and operating method thereof, a memory system and operating method thereof, wherein the memory device includes: an array of memory cells; a peripheral circuit coupled to the array of memory cells and configured to: obtain a first result corresponding to a target location in the array of memory cells at an initial target read voltage; perform multiple adjustments to the initial target read voltage, and obtain the first result corresponding to the target location at the target read voltage after each of the adjustments respectively; determine a valley voltage in accordance with a plurality of the obtained first results.

Abstract: A method can include performing a single-read operation at a read reference voltage to detect bits from memory cells. The method can also include determining second bits corresponding to the set of memory cells, the second bits corresponding to data being initially programmed into the set of memory cell. The method can further include determining a read voltage based on the first bits and the second bits.

Abstract: This application provides a method for evaluating a running state of a bridge using a finite element pilot-based deep learning proxy model, belonging to the field of online simulation technologies of bridge structures. The method includes: S1:establishing a finite element simulation model; S2: obtaining vehicle load information according to vehicle positions, number plate information, and axle load-number plate information, obtaining environment load information according to temperature, humidity, and wind speed and direction information of the bridge, and obtaining vehicle-environment load information based on the vehicle load information and the environment load information; S3: adaptively training a finite element pilot-based deep learning neural network proxy model; and S4: inputting the vehicle-environment load information into a finite element pilot-based deep learning neural network proxy model, and outputting a real-time structural state of running of the bridge.

Abstract: The present disclosure relates to codon-optimized sequences coding for hGCDH polypeptide and recombinant adeno-associated virus (rAAV) vectors comprising one of said sequences under the control of a promoter component. Also provided herein are viral particles comprising the rAAV vector, a pharmaceutical composition comprising the rAAV vector or the viral particles, and uses thereof in treating Glutaric aciduria type I (GA-I).

Abstract: The present disclosure provides a memory system for selecting from among a plurality of read retry routines based on metadata. The memory system can include one or more memory devices and a memory controller. The memory controller can also detect a failure of a read operation. The memory controller can also analyze a set of values that correspond to a set of effectors of the read operation. The memory controller can select one or more read retry routines from a plurality of read retry routines based on the analyzing. Each of the plurality of read retry routines can associated with a different effector from the set of effectors and a read voltage that corresponds to the different effector. The memory controller can also perform the selected one or more read retry routines at the portion of the one or more memory devices to negate the failure of the read operation.

Abstract: A memory device includes. a memory controller configured to send a first command, and a memory coupled to the memory controller. The memory is configured to in response to the first command, perform first read operations based on a first set of read voltages. The first set of read voltages includes first read voltages. Any two adjacent first read voltages have an equal offset with a first value. Each first read operation is performed based on one first read voltage. The memory is also configured to obtain first quantities of memory cells meeting set conditions, each of which corresponds to a read result of one first read operation. The memory is further configured to send first information corresponding to the first quantities of memory cells meeting the set conditions to the memory controller.

Abstract: A method can include performing a single-read operation at a read reference voltage to detect bits from memory cells. Dummy data is previously programmed into the memory cells. Original bits of the memory cells can be determined based on a default read reference voltage and known values of the dummy data. The detected bits and the original bits are compared to determine an upper-state failed bit count (FBC) corresponding to the memory cells having threshold voltages shifted from above the read reference voltage to below the read reference voltage and a lower-state FBC corresponding to the memory cells having threshold voltages shifted from below the read reference voltage to above the read reference voltage. When a difference between the upper-state FBC and the lower-state FBC being smaller than a threshold, the read reference voltage can be determined to be a best read reference voltage.

Abstract: This disclosure provides memory, storage system, and operating method for memory. In an implementation, a method comprising: receiving an operation instruction from the controller; mapping a plurality of initial word line identifiers in the operation instruction to a plurality of physical word line identifiers; performing the operation corresponding to the operation instruction on the plurality of first-type memory cell rows through the plurality of first-type word lines indicated by the plurality of physical word line identifiers; wherein, at least one of third-type memory cell rows is distributed between the first memory cell rows and the second memory cell rows in the plurality of first-type memory cell rows, and data stored in the plurality of first-type memory cell rows corresponds to the same parity data.

Abstract: According to one aspect of the present disclosure, a memory system is provided. the memory system may include at least one memory. The at least one memory may include a memory array coupled to n wordlines. The n wordlines may be sequentially arranged by physical wordline identifiers, where n?2. The memory system may include a memory controller coupled to the at least one memory. The memory controller may obtain multiple pieces of data to be written into the memory array. The memory controller may map n physical wordline identifiers to n virtual wordline identifiers. The physical wordline identifiers may respectively correspond to m adjacent virtual wordline identifiers spaced apart from each other, where 2?m?n. The memory controller may generate check data based on data corresponding to the m adjacent virtual wordline identifiers. The check data may check and recover the data corresponding to the m adjacent virtual wordline identifiers.

Abstract: The present disclosure provides a memory system for selecting from among a plurality of read retry routines based on metadata. The memory system can include one or more memory devices and a memory controller. The memory controller can also detect a failure of a read operation. The memory controller can also analyze a set of values that correspond to a set of effectors of the read operation. The memory controller can select one or more read retry routines from a plurality of read retry routines based on the analyzing. Each of the plurality of read retry routines can associated with a different effector from the set of effectors and a read voltage that corresponds to the different effector. The memory controller can also perform the selected one or more read retry routines at the portion of the one or more memory devices to negate the failure of the read operation.

Abstract: A method for operating a memory is provided, including, for example, obtaining a set of read voltages, each of which can include an initial voltage value and an offset voltage value with a certain offset relative to the initial voltage value. The initial voltage value in each of the set of read voltages can be a preset read voltage for distinguishing two adjacent memory states of memory cells of the memory. The operating method can further include performing read operations respectively based on the initial voltage values and the offset voltage values, obtaining the quantity of memory cells in which a read result corresponding to each voltage value meets set conditions, determining a difference between the two quantities corresponding to every two adjacent voltage values belonging to the same set of read voltages, and determining an optimal read voltage for distinguishing the two adjacent memory states based on the difference.

Abstract: The present disclosure provides a recombinant adeno-associated vector comprising a codon-optimized sequence encoding CYP4V2 linked to selected gene expression regulatory sequences and its use in treating Bietti Crystalline Dystrophy (BCD).

Abstract: A sound signal processing method and a headset device. A target filter and a first audio processing unit are added. The target filter processes an external sound signal collected by an external microphone, to obtain an environmental sound attenuation signal and a voice attenuation signal. The first audio processing unit removes, based on the environmental sound attenuation signal and the voice attenuation signal, a second external environmental sound signal and a second voice signal from an in-ear sound signal collected by an error microphone, to obtain a blocking signal, and transmits the blocking signal to a feedback filter. The feedback filter may generate an inverted noise signal corresponding to the blocking signal and play the inverted noise signal through a speaker.

Abstract: A method can include performing a single-read operation at a read reference voltage to detect bits from memory cells. Dummy data is previously programmed into the memory cells. Original bits of the memory cells can be determined based on a default read reference voltage and known values of the dummy data. The detected bits and the original bits are compared to determine an upper-state failed bit count (FBC) corresponding to the memory cells having threshold voltages shifted from above the read reference voltage to below the read reference voltage and a lower-state FBC corresponding to the memory cells having threshold voltages shifted from below the read reference voltage to above the read reference voltage. When a difference between the upper-state FBC and the lower-state FBC being smaller than a threshold, the read reference voltage can be determined to be a best read reference voltage.

Abstract: A method for operating a memory is provided, including, for example, obtaining a set of read voltages, each of which can include an initial voltage value and an offset voltage value with a certain offset relative to the initial voltage value. The initial voltage value in each of the set of read voltages can be a preset read voltage for distinguishing two adjacent memory states of memory cells of the memory. The operating method can further include performing read operations respectively based on the initial voltage values and the offset voltage values, obtaining the quantity of memory cells in which a read result corresponding to each voltage value meets set conditions, determining a difference between the two quantities corresponding to every two adjacent voltage values belonging to the same set of read voltages, and determining an optimal read voltage for distinguishing the two adjacent memory states based on the difference.

Abstract: An example of the present disclosure provides a memory device including: a memory array and a peripheral circuit coupled with the memory array. The memory array includes memory blocks each including pages each including memory cells. The peripheral circuit includes a control logic configured to: receive the first information indicating to search the boundary page of the selected memory block in the memory blocks; the boundary page being related to the page requiring information recovery in the selected memory block; receive the address of the selected memory block; obtain the address of the boundary page in connection with the page erasing check function using the address of the selected memory block, the page erasing check function being configured to feed back whether memory cells in the page to be checked are all in the erased state.