Abstract: A material structure for silicon-based gallium nitride microwave and millimeter-wave devices and a manufacturing method thereof are provided. The material structure includes: a silicon substrate; a dielectric layer of high thermal conductivity, disposed on an upper surface of the silicon substrate, and an uneven first patterned interface being formed between the dielectric layer and the silicon substrate; a buffer layer, disposed on an upper surface of the dielectric layer, and an uneven second patterned interface being formed between the buffer layer and the dielectric layer; a channel layer, disposed on an upper surface of the buffer layer; and a composite barrier layer, disposed on an upper surface of the channel layer. In the material structure, the uneven patterned interfaces increase contact areas of the interfaces, a thermal boundary resistance and a thermal resistance of device are reduced, and a heat dissipation performance of device is improved.

Abstract: A method for preparing an AlN based template having a Si substrate and a method for preparing a GaN based epitaxial structure having a Si substrate are provided. The method for preparing the AlN based template having the Si substrate, which includes: providing the Si substrate; growing an AlN nucleation layer on the Si substrate; and introducing an ion passing through the AlN nucleation layer and into the Si substrate. After the AlN nucleation layer is prepared on the Si substrate, the ions are introduced into the Si substrate and the AlN nucleation layer through the AlN nucleation layer. In this way, types of the introduced ions can be expanded. In addition, a carrier concentration at an interface between the Si substrate and the AlN nucleation layer and a carrier concentration in the AlN nucleation layer can also be reduced.

Abstract: A material structure for silicon-based gallium nitride microwave and millimeter-wave devices and a manufacturing method thereof are provided. The material structure includes: a silicon substrate; a dielectric layer of high thermal conductivity, disposed on an upper surface of the silicon substrate, and an uneven first patterned interface being formed between the dielectric layer and the silicon substrate; a buffer layer, disposed on an upper surface of the dielectric layer, and an uneven second patterned interface being formed between the buffer layer and the dielectric layer; a channel layer, disposed on an upper surface of the buffer layer; and a composite barrier layer, disposed on an upper surface of the channel layer. In the material structure, the uneven patterned interfaces increase contact areas of the interfaces, a thermal boundary resistance and a thermal resistance of device are reduced, and a heat dissipation performance of device is improved.

Abstract: A method for preparing an AlN based template having a Si substrate and a method for preparing a GaN based epitaxial structure having a Si substrate are provided. The method for preparing the AlN based template having the Si substrate, which includes: providing the Si substrate; growing an AlN nucleation layer on the Si substrate; and introducing an ion passing through the AlN nucleation layer and into the Si substrate. After the AlN nucleation layer is prepared on the Si substrate, the ions are introduced into the Si substrate and the AlN nucleation layer through the AlN nucleation layer. In this way, types of the introduced ions can be expanded. In addition, a carrier concentration at an interface between the Si substrate and the AlN nucleation layer and a carrier concentration in the AlN nucleation layer can also be reduced.

Abstract: A contrast ratio promotion method for a display device is provided. The display device contains a back light module having a brightness and has a maximum luminance. The contrast ratio promotion method comprises the steps of continuously receiving a picture signal during each unit time, continuously calculating a ratio of a luminance of a picture corresponding to the picture signal to the maximum luminance, where the ratio is defined as an instant relative luminance, setting a first ratio, a first buffer time and a first adjusting time, and gradually reducing the brightness of the back light module to a minimum brightness during the first adjusting time when a first cumulated time for the respective consecutive plural instant relative luminances being smaller than the first ratio is longer than the first buffer time.

Abstract: An adjustment method for a display device is provided. The display device includes a screen, a button and plural display modes including at least a first display mode and a second display mode. The adjustment method comprises steps of pressing the button once to display the first display mode on the screen when the display device is on, waiting for a waiting time when the first mode is desired to be selected, pressing the button again during the waiting time to display the second display mode on the screen when the first mode is not desired to be selected, and waiting for a waiting time when the second mode is desired to be selected.

Abstract: A contrast ratio promotion method for a display device is provided. The display device contains a back light module having a brightness and has a maximum luminance. The contrast ratio promotion method comprises the steps of continuously receiving a picture signal during each unit time, continuously calculating a ratio of a luminance of a picture corresponding to the picture signal to the maximum luminance, where the ratio is defined as an instant relative luminance, setting a first ratio, a first buffer time and a first adjusting time, and gradually reducing the brightness of the back light module to a minimum brightness during the first adjusting time when a first cumulated time for the respective consecutive plural instant relative luminances being smaller than the first ratio is longer than the first buffer time.

Abstract: A table top includes an exterior shell providing an interior region. An interior frame and a core are located in the interior region. The exterior shell includes top and bottom sheets and a perimeter bumper.

Abstract: A table top includes an exterior shell providing an interior region. An interior frame and a core are located in the interior region. The exterior shell includes top and bottom sheets and a perimeter bumper.

Abstract: A lockable hinge includes a first and second hinge member, a lock, and an actuator. The lockable hinge is coupled to a pair of ladder-leg sections and is arranged to allow the ladder-leg sections to move among closed-ladder, trestle-ladder, and straight-ladder positions. The lock is used to lock the hinge members to cause the ladder-leg sections to lock in the closed-ladder, trestle-ladder and straight-ladder positions.

Abstract: A foldable chair that includes front legs, rear legs, a seat and a collar slidable on the front legs pivotally coupling the front and rear legs.

Abstract: A foldable chair that includes front legs, rear legs, a seat and a collar slidable on the front legs pivotally coupling the front and rear legs.