Patents by Inventor Lu-Ping Chiang
Lu-Ping Chiang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20220157993Abstract: A flash memory device is provided. The flash memory device includes a substrate, a first dielectric layer, a second dielectric layer, a third dielectric layer, a first polycrystalline silicon layer and a second polycrystalline silicon layer. The first dielectric layer is formed on the substrate located in a first region of a peripheral region, the second dielectric layer is formed on the substrate located in a second region of the peripheral region, and the third dielectric layer is formed on the substrate located in an array region. A bottom surface of the third dielectric layer is lower than a bottom surface of the second dielectric layer. The first polycrystalline silicon layer is formed on the first and the second dielectric layers. The second polycrystalline silicon layer is formed on the third dielectric layer.Type: ApplicationFiled: February 4, 2022Publication date: May 19, 2022Inventors: Cheng-Ta YANG, Lu-Ping CHIANG
-
Patent number: 11289612Abstract: A flash memory device and its manufacturing method are provided. The flash memory device includes a substrate, a first dielectric layer, a second dielectric layer, a third dielectric layer, a first polycrystalline silicon layer and a second polycrystalline silicon layer. The first dielectric layer is formed on the substrate located in a first region of a peripheral region, the second dielectric layer is formed on the substrate located in a second region of the peripheral region, and the third dielectric layer is formed on the substrate located in an array region. A bottom surface of the third dielectric layer is lower than a bottom surface of the second dielectric layer. The first polycrystalline silicon layer is formed on the first and the second dielectric layers. The second polycrystalline silicon layer is formed on the third dielectric layer.Type: GrantFiled: March 19, 2020Date of Patent: March 29, 2022Assignee: WINBOND ELECTRONICS CORP.Inventors: Cheng-Ta Yang, Lu-Ping Chiang
-
Patent number: 10847612Abstract: A method of manufacturing a memory structure including the following steps is provided. Stacked structures are formed on a substrate, and each of the stacked structures includes a first dielectric layer and a first conductive layer sequentially disposed on the substrate. A first opening is located between two adjacent stacked structure, and the first opening extends into the substrate. At least one isolation structure is formed in the first opening. The isolation structure covers a sidewall of the first dielectric layer. The isolation structure has a recess therein, such that a top profile of the isolation structure is shaped as a funnel. A second dielectric layer is formed on the stacked structures. A second conductive layer is formed on the second dielectric layer and fills the first opening.Type: GrantFiled: July 18, 2019Date of Patent: November 24, 2020Assignee: Winbond Electronics Corp.Inventors: Chung-Hsien Liu, Chun-Hsu Chen, Lu-Ping Chiang
-
Publication number: 20200303556Abstract: A flash memory device and its manufacturing method are provided. The flash memory device includes a substrate, a first dielectric layer, a second dielectric layer, a third dielectric layer, a first polycrystalline silicon layer and a second polycrystalline silicon layer. The first dielectric layer is formed on the substrate located in a first region of a peripheral region, the second dielectric layer is formed on the substrate located in a second region of the peripheral region, and the third dielectric layer is formed on the substrate located in an array region. A bottom surface of the third dielectric layer is lower than a bottom surface of the second dielectric layer. The first polycrystalline silicon layer is formed on the first and the second dielectric layers. The second polycrystalline silicon layer is formed on the third dielectric layer.Type: ApplicationFiled: March 19, 2020Publication date: September 24, 2020Inventors: Cheng-Ta YANG, Lu-Ping CHIANG
-
Patent number: 10566337Abstract: Provided is a method of manufacturing a memory device including following steps. A substrate including an active region and a periphery region. A stack layer is formed on the substrate. A first trench is formed in the substrate and the stack layer in the active region. A first isolation structure is formed in the first trench. An ion implantation process is performed to form a doped first isolation structure. A first wet etching process is performed to remove a portion of the doped first isolation structure, so that a first recess is formed on the doped first isolation structure. A protection layer is formed on the substrate to at least cover sidewalls of the first recess. A second wet etching process is performed to remove the protection layer and another portion of the doped first isolation structure and deepen the first recess. A SICONI etching process is performed.Type: GrantFiled: December 11, 2018Date of Patent: February 18, 2020Assignee: Winbond Electronics Corp.Inventors: Chung-Hsien Liu, Chun-Hsu Chen, Lu-Ping Chiang
-
Patent number: 10497786Abstract: A manufacturing method of a semiconductor device includes the following steps. A first conductive layer, a first oxide layer, and a hardmask layer are sequentially formed on a substrate. The hardmask layer and the first oxide layer are patterned to form a stacking structure including a hardmask pattern and a first oxide pattern. An oxidation process is performed, such that a second oxide layer is formed on surfaces of the stacking structure and the first conductive layer, and a region of the first conductive layer adjacent to a sidewall of the stacking structure are oxidized to form an extending oxide pattern. The second oxide layer is removed. The stacking structure is applied as a mask to remove an exposed portion of the first conductive layer and the substrate therebelow, such that a first conductive structure and a recess in the substrate are formed. The stacking structure is removed. The extending oxide pattern is removed.Type: GrantFiled: August 27, 2018Date of Patent: December 3, 2019Assignee: Winbond Electronics Corp.Inventors: Chung-Hsien Liu, Chun-Hsu Chen, Lu-Ping Chiang
-
Publication number: 20190341449Abstract: A method of manufacturing a memory structure including the following steps is provided. Stacked structures are formed on a substrate, and each of the stacked structures includes a first dielectric layer and a first conductive layer sequentially disposed on the substrate. A first opening is located between two adjacent stacked structure, and the first opening extends into the substrate. At least one isolation structure is formed in the first opening. The isolation structure covers a sidewall of the first dielectric layer. The isolation structure has a recess therein, such that a top profile of the isolation structure is shaped as a funnel. A second dielectric layer is formed on the stacked structures. A second conductive layer is formed on the second dielectric layer and fills the first opening.Type: ApplicationFiled: July 18, 2019Publication date: November 7, 2019Applicant: Winbond Electronics Corp.Inventors: Chung-Hsien Liu, Chun-Hsu Chen, Lu-Ping Chiang
-
Publication number: 20190319037Abstract: Provided is a method of manufacturing a memory device including following steps. A substrate including an active region and a periphery region. A stack layer is formed on the substrate. A first trench is formed in the substrate and the stack layer in the active region. A first isolation structure is formed in the first trench. An ion implantation process is performed to form a doped first isolation structure. A first wet etching process is performed to remove a portion of the doped first isolation structure, so that a first recess is formed on the doped first isolation structure. A protection layer is formed on the substrate to at least cover sidewalls of the first recess. A second wet etching process is performed to remove the protection layer and another portion of the doped first isolation structure and deepen the first recess. A SICONI etching process is performed.Type: ApplicationFiled: December 11, 2018Publication date: October 17, 2019Applicant: Winbond Electronics Corp.Inventors: Chung-Hsien Liu, Chun-Hsu Chen, Lu-Ping Chiang
-
Patent number: 10438958Abstract: A method for manufacturing a semiconductor memory device including following steps is provided. A substrate having a first region, a second region, and a third region is provided. A first stack structure is formed on the first region. A second stack structure is formed on the second region. A third stack structure is formed on the third region. A first mask layer is formed on the substrate to cover the third stack structure. A first ion implantation process is performed, so that a second floating gate and a second control gate in the second stack structure are changed to a first conductive type. A second mask layer formed on the substrate to cover the first and second stack structures. A second ion implantation process is performed, so that a third floating gate and a third control gate in the third stack structure are changed as a second conductive type.Type: GrantFiled: January 15, 2018Date of Patent: October 8, 2019Assignee: Winbond Electronics Corp.Inventors: Cheng-Ta Yang, Lu-Ping Chiang
-
Patent number: 10418440Abstract: A memory structure including a substrate, stacked structures, at least one isolation structure, a second conductive layer, and a second dielectric layer is provided. The stacked structures are disposed on the substrate. Each of the stacked structures includes a first dielectric layer and a first conductive layer sequentially disposed on the substrate. A first opening is located between two adjacent stacked structures, and the first opening extends into the substrate. The isolation structure is disposed in the first opening and covers a sidewall of the first dielectric layer. The isolation structure has a recess, such that a top profile of the isolation structure is shaped as a funnel. The second conductive layer is disposed on the stacked structures and fills the first opening. The second dielectric layer is disposed between the second conductive layer and the first conductive layer.Type: GrantFiled: August 30, 2017Date of Patent: September 17, 2019Assignee: Winbond Electronics Corp.Inventors: Chung-Hsien Liu, Chun-Hsu Chen, Lu-Ping Chiang
-
Patent number: 10381449Abstract: A method of manufacturing a memory device including following steps is provided. A first dielectric layer and a first conductive layer are formed in order on the substrate. A first opening and a second opening on the first opening are formed in the substrate, the first dielectric layer and the first conductive layer. An isolation structure is formed in the first opening. A second dielectric layer is formed on the substrate to conformally cover a top surface of the first conductive layer and a surface of the second opening. A heat treatment is performed on the second dielectric layer to enhance the bonding between the second dielectric layer and the first conductive layer. An etching process is performed, so as to remove a portion of the second dielectric layer and expose a top surface of the isolation structure.Type: GrantFiled: January 11, 2018Date of Patent: August 13, 2019Assignee: Winbond Electronics Corp.Inventors: Chung-Hsien Liu, Chun-Hsu Chen, Lu-Ping Chiang
-
Publication number: 20190088486Abstract: A manufacturing method of a semiconductor device includes the following steps. A first conductive layer, a first oxide layer, and a hardmask layer are sequentially formed on a substrate. The hardmask layer and the first oxide layer are patterned to form a stacking structure including a hardmask pattern and a first oxide pattern. An oxidation process is performed, such that a second oxide layer is formed on surfaces of the stacking structure and the first conductive layer, and a region of the first conductive layer adjacent to a sidewall of the stacking structure are oxidized to form an extending oxide pattern. The second oxide layer is removed. The stacking structure is applied as a mask to remove an exposed portion of the first conductive layer and the substrate therebelow, such that a first conductive structure and a recess in the substrate are formed. The stacking structure is removed. The extending oxide pattern is removed.Type: ApplicationFiled: August 27, 2018Publication date: March 21, 2019Applicant: Winbond Electronics Corp.Inventors: Chung-Hsien Liu, Chun-Hsu Chen, Lu-Ping Chiang
-
Publication number: 20180350608Abstract: A method of manufacturing a memory device including following steps is provided. A first dielectric layer and a first conductive layer are formed in order on the substrate. A first opening and a second opening on the first opening are formed in the substrate, the first dielectric layer and the first conductive layer. An isolation structure is formed in the first opening. A second dielectric layer is formed on the substrate to conformally cover a top surface of the first conductive layer and a surface of the second opening. A heat treatment is performed on the second dielectric layer to enhance the bonding between the second dielectric layer and the first conductive layer. An etching process is performed, so as to remove a portion of the second dielectric layer and expose a top surface of the isolation structure.Type: ApplicationFiled: January 11, 2018Publication date: December 6, 2018Applicant: Winbond Electronics Corp.Inventors: Chung-Hsien Liu, Chun-Hsu Chen, Lu-Ping Chiang
-
Publication number: 20180342527Abstract: A method for manufacturing a semiconductor memory device including following steps is provided. A substrate having a first region, a second region, and a third region is provided. A first stack structure is formed on the first region. A second stack structure is formed on the second region. A third stack structure is formed on the third region. A first mask layer is formed on the substrate to cover the third stack structure. A first ion implantation process is performed, so that a second floating gate and a second control gate in the second stack structure are changed to a first conductive type. A second mask layer formed on the substrate to cover the first and second stack structures. A second ion implantation process is performed, so that a third floating gate and a third control gate in the third stack structure are changed as a second conductive type.Type: ApplicationFiled: January 15, 2018Publication date: November 29, 2018Applicant: Winbond Electronics Corp.Inventors: Cheng-Ta Yang, Lu-Ping Chiang
-
Publication number: 20180308929Abstract: A memory structure including a substrate, stacked structures, at least one isolation structure, a second conductive layer, and a second dielectric layer is provided. The stacked structures are disposed on the substrate. Each of the stacked structures includes a first dielectric layer and a first conductive layer sequentially disposed on the substrate. A first opening is located between two adjacent stacked structures, and the first opening extends into the substrate. The isolation structure is disposed in the first opening and covers a sidewall of the first dielectric layer. The isolation structure has a recess, such that a top profile of the isolation structure is shaped as a funnel. The second conductive layer is disposed on the stacked structures and fills the first opening. The second dielectric layer is disposed between the second conductive layer and the first conductive layer.Type: ApplicationFiled: August 30, 2017Publication date: October 25, 2018Applicant: Winbond Electronics Corp.Inventors: Chung-Hsien Liu, Chun-Hsu Chen, Lu-Ping Chiang
-
Publication number: 20140127905Abstract: A method of forming a pattern in a substrate is provided, in which the substrate having a pattern region is provided first. A plurality of stripe-shaped mask layers is formed on the substrate in the pattern region. Each of at least two adjacent stripe-shaped mask layers among the stripe-shaped mask layers has a protrusion portion and the protrusion portions face to each other. A spacer is formed on sidewalls of the stripe-shaped mask layers, wherein a thickness of the spacer is greater than a half of a distance between two of the protrusion portions. Subsequently, the stripe-shaped mask layers are removed. An etching process is performed by using the spacer as a mask to form trenches in the substrate. Thereafter, the trenches are filled with a material.Type: ApplicationFiled: November 7, 2012Publication date: May 8, 2014Applicant: Winbond Electronics Corp.Inventor: Lu-Ping Chiang
-
Patent number: 8697538Abstract: A method of forming a pattern in a substrate is provided, in which the substrate having a pattern region is provided first. A plurality of stripe-shaped mask layers is formed on the substrate in the pattern region. Each of at least two adjacent stripe-shaped mask layers among the stripe-shaped mask layers has a protrusion portion and the protrusion portions face to each other. A spacer is formed on sidewalls of the stripe-shaped mask layers, wherein a thickness of the spacer is greater than a half of a distance between two of the protrusion portions. Subsequently, the stripe-shaped mask layers are removed. An etching process is performed by using the spacer as a mask to form trenches in the substrate. Thereafter, the trenches are filled with a material.Type: GrantFiled: November 7, 2012Date of Patent: April 15, 2014Assignee: Winbond Electronics Corp.Inventor: Lu-Ping Chiang
-
Patent number: 8693249Abstract: A semiconductor memory device includes a memory array, a row selection circuit and a bit line selection circuit. The memory array is composed of a plurality of cell units, wherein each cell unit has memory cells connected in series. The row selection circuit selects the memory cells in a row direction of the cell units, and the bit line selection circuit selects a bit line from an even bit line and an odd bit line coupled to the cell units. The bit line selection circuit includes a first selection part including selection transistors for selectively coupling the even or odd bit line to a sensor circuit and a second selection part including bias transistors for selectively coupling the even or odd bit line to a voltage source providing biases, wherein the bias transistors and the memory cells are formed in a common well.Type: GrantFiled: January 13, 2012Date of Patent: April 8, 2014Assignee: Winbond Electronics Corp.Inventors: Masaru Yano, Lu-Ping Chiang
-
Publication number: 20140063970Abstract: A semiconductor memory device performing high speed reading with a miniaturized sensing circuit is provided. A pre-charge voltage from a virtual potential VPRE? is provided to an odd bit line when an even bit line is selected, the pre-charge voltage is provided from a source voltage supply unit 230 to a shared odd source line SL_o, a ground potential is provided from the source voltage supply unit 230 to an even source line SL_e.Type: ApplicationFiled: May 27, 2013Publication date: March 6, 2014Applicant: Winbond Electronics Corp.Inventors: Masaru Yano, Lu-Ping Chiang
-
Patent number: 8659950Abstract: A semiconductor memory device performing high speed reading with a miniaturized sensing circuit is provided. A pre-charge voltage from a virtual potential VPRE? is provided to an odd bit line when an even bit line is selected, the pre-charge voltage is provided from a source voltage supply unit 230 to a shared odd source line SL_o, a ground potential is provided from the source voltage supply unit 230 to an even source line SL_e.Type: GrantFiled: May 27, 2013Date of Patent: February 25, 2014Assignee: Winbond Electronics Corp.Inventors: Masaru Yano, Lu-Ping Chiang