Abstract: A light therapy device includes a main body, a light-emitting portion and a power supply unit. The light-emitting portion is disposed on the main body. The light-emitting portion has a first light source. The first light source provides light with a specific wavelength and with an energy ranged from 0.01 J/cm2 to 10 J/cm2. The power supply unit is electrically connected to the main body, and is configured for providing the light-emitting portion with electric power. The light therapy device is used to irradiate teeth and periodontal cells, which can accelerate regeneration of teeth bone cells and gum tissues and inhibit bacteria, thereby achieving the therapeutic effect.

Abstract: In a method for enhancing viability of periodontal tissue cells associated with more than one tooth, the periodontal tissue cells are irradiated simultaneously by an LED (light emitting diode) module having a light emitting range covering the associated teeth, wherein the irradiating energy is between 0.1 J/cm2 and 10 J/cm2.

Abstract: The present invention discloses a method of manufacturing a solar cell by forming two electrode layers on the same side of a wafer, and avoiding sunlight incident to another side from being blocked by the electrode layers to enhance the photoelectric conversion efficiency, and each electrode layer is formed by using a mask layer to perform a vapor deposition process, without requiring any mask lithography or etching process. Of course, the issue of a high-temperature process that deteriorates the quality of the wafer no longer exists.

Abstract: The present invention discloses a method of manufacturing a solar cell by forming two electrode layers on the same side of a wafer, and avoiding sunlight incident to another side from being blocked by the electrode layers to enhance the photoelectric conversion efficiency, and each electrode layer is formed by using a mask layer to perform a vapor deposition process, without requiring any mask lithography or etching process. Of course, the issue of a high-temperature process that deteriorates the quality of the wafer no longer exists.