Patents by Inventor Lu Su

Lu Su has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240189438
    Abstract: A drug conjugate of a glucocorticoid receptor agonist, and an application thereof in medicine. Specifically, the present invention relates to an antibody-drug conjugate as represented by formula (I): Ab-(L-D)k (I), wherein Ab is an antibody or an antigen-binding fragment thereof, L is a linker covalently linking Ab to D, k is 1 to 20, and D is as represented by formula (II-A) or (II-B). The groups in the formulas are as defined in the description. The antibody-drug conjugate can effectively treat autoimmune diseases.
    Type: Application
    Filed: January 28, 2022
    Publication date: June 13, 2024
    Inventors: Lingjian Zhu, Min Hong, Manping Tang, Lu Su, Mengdie Deng, Jingyang Zhang, Wenming Ren, Kan Lin, Jian Huang, Cheng Liao, Lianshan Zhang
  • Publication number: 20240050433
    Abstract: Provided is an application of a JAK inhibitor in kidney disease. Specifically, provided is a use of a JAK inhibitor in the preparation of a drug for treating or preventing kidney disease.
    Type: Application
    Filed: December 10, 2021
    Publication date: February 15, 2024
    Inventors: Cheng LIAO, Lu SU, Kan LIN, Jingyang ZHANG
  • Patent number: 11334941
    Abstract: Systems and methods are disclosed for determining one or more credit lines based on statistical approximations of credit line optimization models. By approximating the results of the optimization model, the disclosed embodiments may provide real-time account level credit line determinations based on fewer criteria than used in the optimization models. Other aspects of the disclosed embodiments are described herein.
    Type: Grant
    Filed: July 27, 2020
    Date of Patent: May 17, 2022
    Assignee: CAPITAL ONE SERVICES, LLC
    Inventors: Antonello Loddo, Lu Su, Leonard Roseman, Ram Narayan
  • Publication number: 20200357063
    Abstract: Systems and methods are disclosed for determining one or more credit lines based on statistical approximations of credit line optimization models. By approximating the results of the optimization model, the disclosed embodiments may provide real-time account level credit line determinations based on fewer criteria than used in the optimization models. Other aspects of the disclosed embodiments are described herein.
    Type: Application
    Filed: July 27, 2020
    Publication date: November 12, 2020
    Applicant: Capital One Services, LLC
    Inventors: Antonello Loddo, Lu Su, Leonard Roseman, Ram Narayan
  • Patent number: 10762560
    Abstract: Systems and methods are disclosed for determining one or more credit lines based on statistical approximations of credit line optimization models. By approximating the results of the optimization model, the disclosed embodiments may provide real-time account level credit line determinations based on fewer criteria than used in the optimization models. Other aspects of the disclosed embodiments are described herein.
    Type: Grant
    Filed: February 23, 2018
    Date of Patent: September 1, 2020
    Assignee: Capital One Services, LLC
    Inventors: Antonello Loddo, Lu Su, Leonard Roseman, Ram Narayan
  • Patent number: 10643276
    Abstract: Systems and methods are disclosed for determining one or more credit lines based on statistical approximations of credit line optimization models. By approximating the results of the optimization model, the disclosed embodiments may provide real-time account level credit line determinations based on fewer criteria than used in the optimization models. Other aspects of the disclosed embodiments are described herein.
    Type: Grant
    Filed: March 10, 2014
    Date of Patent: May 5, 2020
    Assignee: Capital One Services, LLC
    Inventors: Antonello Loddo, Lu Su, Leonard Roseman, Ram Narayan
  • Patent number: 10408432
    Abstract: A display assembly having a first backlit display including a first panel with a first color image formed thereon, the first color image including a first transparent portion of a first color and a second transparent portion of a second color, a second panel including a first transparent portion of a first color and an opaque portion so that light from the light source does not pass through a corresponding portion of the first panel, and a light source that emits at least a first color light and a second color light, wherein the first color of the first transparent portion of the first panel is a different color than the first color of the first transparent portion of the second panel, and light from the light source passes through the first transparent portions of both the first panel and the second panel.
    Type: Grant
    Filed: September 19, 2018
    Date of Patent: September 10, 2019
    Assignee: Toy Wonders, Inc.
    Inventors: Lu Su, Samuel Yuehli Su
  • Publication number: 20190032896
    Abstract: A display assembly having a first backlit display including a first panel with a first color image formed thereon, the first color image including a first transparent portion of a first color and a second transparent portion of a second color, a second panel including a first transparent portion of a first color and an opaque portion so that light from the light source does not pass through a corresponding portion of the first panel, and a light source that emits at least a first color light and a second color light, wherein the first color of the first transparent portion of the first panel is a different color than the first color of the first transparent portion of the second panel, and light from the light source passes through the first transparent portions of both the first panel and the second panel.
    Type: Application
    Filed: September 19, 2018
    Publication date: January 31, 2019
    Inventors: Lu Su, Samuel Yuehli Su
  • Patent number: 10087080
    Abstract: A method of fabricating a poly-crystalline silicon ingot includes: (a) loading a nucleation promotion layer onto a bottom of a mold; (b) providing a silicon source on the nucleation promotion layer in the mold; (c) heating the mold until the silicon source is melted into a silicon melt completely; (d) controlling at least one thermal control parameter regarding the silicon melt continually to enable the silicon melt to nucleate on the nucleation promotion layer such that a plurality of silicon grains grow in the vertical direction; (e) controlling the at least one thermal control parameter to enable the plurality of the silicon grains to continuously grow with an average grain size increasing progressively in the vertical direction until entirety of the silicon melt is solidified to obtain the poly-crystalline silicon ingot, wherein the nucleation promotion layer is loaded by spreading a plurality of mono-Si particles over the bottom of the mold.
    Type: Grant
    Filed: November 14, 2016
    Date of Patent: October 2, 2018
    Assignee: Sino-American Silicon Products Inc.
    Inventors: Wen-Huai Yu, Cheng-Jui Yang, Yu-Min Yang, Kai-Yuan Pai, Wen-Chieh Lan, Chan-Lu Su, Yu-Tsung Chiang, Sung-Lin Hsu, Wen-Ching Hsu, Chung-Wen Lan
  • Patent number: 10088131
    Abstract: A display assembly having a first backlit display including a first panel with a first color image formed thereon, the first color image including a first transparent portion of a first color and a second transparent portion of a second color, a second panel including a first transparent portion of a first color and an opaque portion so that light from the light source does not pass through a corresponding portion of the first panel, and a light source that emits at least a first color light and a second color light, wherein the first color of the first transparent portion of the first panel is a different color than the first color of the first transparent portion of the second panel, and light from the light source passes through the first transparent portions of both the first panel and the second panel.
    Type: Grant
    Filed: April 16, 2018
    Date of Patent: October 2, 2018
    Inventors: Lu Su, Samuel Yuehli Su
  • Patent number: 10065863
    Abstract: A poly-crystalline silicon ingot having a bottom and defining a vertical direction includes a plurality of silicon grains grown in the vertical direction, in which the plurality of the silicon grains have at least three crystal orientations; and a nucleation promotion layer comprising a plurality of chips and chunks of poly-crystalline silicon on the bottom, wherein the poly-crystalline silicon ingot has a defect density at a height ranging from about 150 mm to about 250 mm of the poly-crystalline silicon ingot that is less than 15%.
    Type: Grant
    Filed: May 1, 2017
    Date of Patent: September 4, 2018
    Assignee: Sino-American Silicon Products Inc.
    Inventors: Wen-Huai Yu, Cheng-Jui Yang, Yu-Min Yang, Kai-Yuan Pai, Wen-Chieh Lan, Chan-Lu Su, Yu-Tsung Chiang, Sung-Lin Hsu, Wen-Ching Hsu, Chung-Wen Lan
  • Publication number: 20180231217
    Abstract: A display assembly having a first backlit display including a first panel with a first color image formed thereon, the first color image including a first transparent portion of a first color and a second transparent portion of a second color, a second panel including a first transparent portion of a first color and an opaque portion so that light from the light source does not pass through a corresponding portion of the first panel, and a light source that emits at least a first color light and a second color light, wherein the first color of the first transparent portion of the first panel is a different color than the first color of the first transparent portion of the second panel, and light from the light source passes through the first transparent portions of both the first panel and the second panel.
    Type: Application
    Filed: April 16, 2018
    Publication date: August 16, 2018
    Inventors: Lu Su, Samuel Yuehli Su
  • Publication number: 20180106462
    Abstract: A display assembly having a first backlit display including a first panel with a first color image formed thereon, the first color image including a first transparent portion of a first color and a second transparent portion of a second color, a second panel including a first transparent portion of a first color and an opaque portion so that light from the light source does not pass through a corresponding portion of the first panel, and a light source that emits at least a first color light and a second color light, wherein the first color of the first transparent portion of the first panel is a different color than the first color of the first transparent portion of the second panel, and light from the light source passes through the first transparent portions of both the first panel and the second panel.
    Type: Application
    Filed: February 22, 2017
    Publication date: April 19, 2018
    Inventors: Lu Su, Samuel Yuehli Su
  • Patent number: 9945539
    Abstract: A display assembly having a first backlit display including a first panel with a first color image formed thereon, the first color image including a first transparent portion of a first color and a second transparent portion of a second color, a second panel including a first transparent portion of a first color and an opaque portion so that light from the light source does not pass through a corresponding portion of the first panel, and a light source that emits at least a first color light and a second color light, wherein the first color of the first transparent portion of the first panel is a different color than the first color of the first transparent portion of the second panel, and light from the light source passes through the first transparent portions of both the first panel and the second panel.
    Type: Grant
    Filed: February 22, 2017
    Date of Patent: April 17, 2018
    Inventors: Lu Su, Samuel Yuehli Su
  • Publication number: 20170233257
    Abstract: A poly-crystalline silicon ingot having a bottom and defining a vertical direction includes a plurality of silicon grains grown in the vertical direction, in which the plurality of the silicon grains have at least three crystal orientations; and a nucleation promotion layer comprising a plurality of chips and chunks of poly-crystalline silicon on the bottom, wherein the poly-crystalline silicon ingot has a defect density at a height ranging from about 150 mm to about 250 mm of the poly-crystalline silicon ingot that is less than 15%.
    Type: Application
    Filed: May 1, 2017
    Publication date: August 17, 2017
    Applicant: Sino-American Silicon Products Inc.
    Inventors: Wen-Huai Yu, Cheng-Jui Yang, Yu-Min Yang, Kai-Yuan Pai, Wen-Chieh Lan, Chan-Lu Su, Yu-Tsung Chiang, Sung-Lin Hsu, Wen-Ching Hsu, Chung-Wen Lan
  • Patent number: 9667530
    Abstract: In at least one embodiment, a method and a system include a node potentially having information responsive to an information request distributed into, for example, a federated coalition network where the node receives at least one information request packet, conducts a search of information at the node to determine if requested information is present, when the requested information is present, then the node sends an acknowledgement to a requesting node, linear network codes the requested information into m packets where m is greater than or equal to k, which is the number of packets needed to be received by the requesting node to reconstruct the requested information, selects multiple paths between the node and the requesting node such that no third party will see more than k?1 different packets, and transmits the m packets distributed over the selected paths.
    Type: Grant
    Filed: May 6, 2013
    Date of Patent: May 30, 2017
    Assignee: International Business Machines Corporation
    Inventors: Thomas J. C. Berman, Seraphin B. Calo, Lu Su, David R. Vyvyan, Fan Ye
  • Patent number: 9637391
    Abstract: A crystalline silicon ingot and a method of fabricating the same are provided. The method utilizes a nucleation promotion layer to facilitate a plurality of silicon grains to nucleate on the nucleation promotion layer from a silicon melt and grow in a vertical direction into silicon grains until the silicon melt is completely solidified. The increment rate of defect density in the silicon ingot along the vertical direction has a range of 0.01%/mm˜10%/mm.
    Type: Grant
    Filed: January 14, 2014
    Date of Patent: May 2, 2017
    Assignee: Sino-American Silicon Products Inc.
    Inventors: Wen-Huai Yu, Cheng-Jui Yang, Yu-Min Yang, Kai-Yuan Pai, Wen-Chieh Lan, Chan-Lu Su, Yu-Tsung Chiang, Sung-Lin Hsu, Wen-Ching Hsu, Chung-Wen Lan
  • Publication number: 20170057829
    Abstract: A method of fabricating a poly-crystalline silicon ingot includes: (a) loading a nucleation promotion layer onto a bottom of a mold; (b) providing a silicon source on the nucleation promotion layer in the mold; (c) heating the mold until the silicon source is melted into a silicon melt completely; (d) controlling at least one thermal control parameter regarding the silicon melt continually to enable the silicon melt to nucleate on the nucleation promotion layer such that a plurality of silicon grains grow in the vertical direction; (e) controlling the at least one thermal control parameter to enable the plurality of the silicon grains to continuously grow with an average grain size increasing progressively in the vertical direction until entirety of the silicon melt is solidified to obtain the poly-crystalline silicon ingot, wherein the nucleation promotion layer is loaded by spreading a plurality of mono-Si particles over the bottom of the mold.
    Type: Application
    Filed: November 14, 2016
    Publication date: March 2, 2017
    Applicant: Sino-American Silicon Products Inc.
    Inventors: Wen-Huai Yu, Cheng-Jui Yang, Yu-Min Yang, Kai-Yuan Pai, Wen-Chieh Lan, Chan-Lu Su, Yu-Tsung Chiang, Sung-Lin Hsu, Wen-Ching Hsu, Chung-Wen Lan
  • Patent number: 9493357
    Abstract: A crystalline silicon ingot and a method of fabricating the same are provided. The method utilizes a nucleation promotion layer to facilitate a plurality of silicon grains to nucleate on the nucleation promotion layer from a silicon melt and grow in a vertical direction into silicon grains until the silicon melt is completely solidified. The increment rate of defect density in the silicon ingot along the vertical direction has a range of 0.01%/mm˜10%/mm.
    Type: Grant
    Filed: March 9, 2012
    Date of Patent: November 15, 2016
    Assignee: Sino-American Silicon Products Inc.
    Inventors: Wen-Huai Yu, Cheng-Jui Yang, Yu-Min Yang, Kai-Yuan Pai, Wen-Chieh Lan, Chan-Lu Su, Yu-Tsung Chiang, Sung-Lin Hsu, Wen-Ching Hsu, Chung-Wen Lan
  • Publication number: 20140328342
    Abstract: In at least one embodiment, a method and a system include a node potentially having information responsive to an information request distributed into, for example, a federated coalition network where the node receives at least one information request packet, conducts a search of information at the node to determine if requested information is present, when the requested information is present, then the node sends an acknowledgement to a requesting node, linear network codes the requested information into m packets where m is greater than or equal to k, which is the number of packets needed to be received by the requesting node to reconstruct the requested information, selects multiple paths between the node and the requesting node such that no third party will see more than k?1 different packets, and transmits the m packets distributed over the selected paths.
    Type: Application
    Filed: May 6, 2013
    Publication date: November 6, 2014
    Inventors: Thomas J. C. Berman, Seraphin B. Calo, Lu Su, David R. Vyvyan, Fan Ye