Patents by Inventor Lu-Wei KUO

Lu-Wei KUO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD OF FORMING OVERLAY MARK STRUCTURE
    Publication number: 20200013724
    Abstract: A method of forming an overlay mark structure includes the following steps. An insulation layer is formed on a substrate. A first overlay mark is formed in the insulation layer. A metal layer is formed on the substrate. The metal layer covers the insulation layer and the first overlay mark. The metal layer on the first overlay mark is removed. A top surface of the first overlay mark is lower than a top surface of the insulation layer after the step of removing the metal layer on the first overlay mark. A second overlay mark is formed on the metal layer. In the method of forming the overlay mark structure, the first overlay mark may not be covered by the metal layer for avoiding influences on related measurements, and the second overlay mark may be formed on the metal layer for avoiding related defects generated by the height difference.
    Type: Application
    Filed: July 31, 2018
    Publication date: January 9, 2020
    Inventors: Zheng-Feng Chen, Sho-Shen Lee, En-Chiuan Liou, Hsiao-Lin Hsu, Yi-Ting Chen, Lu-Wei Kuo
  • Method of forming overlay mark structure
    Patent number: 10529667
    Abstract: A method of forming an overlay mark structure includes the following steps. An insulation layer is formed on a substrate. A first overlay mark is formed in the insulation layer. A metal layer is formed on the substrate. The metal layer covers the insulation layer and the first overlay mark. The metal layer on the first overlay mark is removed. A top surface of the first overlay mark is lower than a top surface of the insulation layer after the step of removing the metal layer on the first overlay mark. A second overlay mark is formed on the metal layer. In the method of forming the overlay mark structure, the first overlay mark may not be covered by the metal layer for avoiding influences on related measurements, and the second overlay mark may be formed on the metal layer for avoiding related defects generated by the height difference.
    Type: Grant
    Filed: July 31, 2018
    Date of Patent: January 7, 2020
    Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.
    Inventors: Zheng-Feng Chen, Sho-Shen Lee, En-Chiuan Liou, Hsiao-Lin Hsu, Yi-Ting Chen, Lu-Wei Kuo
  • Cyclic Microfluidic Chip and Method of Using the Same
    Publication number: 20150284668
    Abstract: The present invention related to a cyclic microfluidic chip that comprises a substrate and a top cover. The substrate having a surface that provides a chamber providing location of a first cell and having a first microchannel, a second microchannel being wrapped around the outside of the chamber and comprising an ECM inlet and an ECM outlet; and a third microchannel being wrapped around the outside of the second microchannel and comprising an cell inlet and an cell outlet to provide a second cell input and output respectively. The top cover comprises a fourth microchannel to provide a medium input and a medium output.
    Type: Application
    Filed: October 2, 2014
    Publication date: October 8, 2015
    Inventors: Yong-Yu HSU, Ming-Yan CHEN, Kuo-Wei CHANG, Tse-Shao CHEN, Kang-Yun LEE, Han-Pin KUO, Yao-Fei CHAN, Lu-Wei KUO, Cheng-Hsien LIU