Abstract: A liquid crystal on silicon (LCoS) cell structure includes a substrate, a plurality of top metal regions arranged in an array, a dielectric material filling between the top metal regions and a composite post spacer disposed on the dielectric material and encircling to form a cell space. The composite post spacer includes a first dielectric layer disposed on the dielectric material and a spacer material layer disposed on the first dielectric layer. The spacer material layer and the first dielectric layer are substantially different.

Abstract: A liquid crystal on silicon (LCoS) cell structure includes a substrate, a plurality of top metal regions arranged in an array, a dielectric material filling between the top metal regions and a composite post spacer disposed on the dielectric material and encircling to form a cell space. The composite post spacer includes a first dielectric layer disposed on the dielectric material and a spacer material layer disposed on the first dielectric layer. The spacer material layer and the first dielectric layer are substantially different.

Abstract: The present invention provides a method for simultaneously fabricating a selective film and a spacer. First, a semiconductor substrate is provided and a first device area and a second device area are defined on the semiconductor substrate. At least a gate is formed on the semiconductor substrate in the second device area. Subsequently, at least a dielectric material is formed on the semiconductor substrate and the dielectric material covers the first device area and the second device area. A patterned mask is then formed on a portion of the dielectric material. Subsequently, an etching process is carried out to remove the dielectric material not covered by the patterned mask, thereby a selective film is formed in the first device area and simultaneously spacers are formed on the sidewalls of the gate in the second device area. Finally, the patterned mask is removed.