Patents by Inventor Lu You
Lu You has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240363757Abstract: A method includes providing a semiconductor structure having metal gate structures (MGs), gate spacers disposed on sidewalls of the MGs, and source/drain (S/D) features disposed adjacent to the gate spacers; forming a first dielectric layer over the MGs and forming S/D contacts (MDs) over the S/D features; forming a second dielectric layer over the first dielectric layer, where portions of the second dielectric layer contact the MDs and the second dielectric layer is different from the first dielectric layer in composition; removing the portions of the second dielectric layer that contact the MDs; forming a conductive layer over the MDs and over the first dielectric layer; and removing portions of the conductive layer to form conductive features over the MDs.Type: ApplicationFiled: July 12, 2024Publication date: October 31, 2024Inventors: Li-Zhen Yu, Jia-Chuan You, Chia-Hao Chang, Tien-Lu Lin, Yu-Ming Lin, Chih-Hao Wang
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Patent number: 12125912Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a contact over a source/drain region of a fin structure, a gate stack over a channel region of the fin structure, a first mask layer covering the gate stack, and a second mask layer covering the contact. A side surface of the first mask layer is direct contact with a side surface of the second mask layer, and the first mask layer includes a portion directly below the second mask layer.Type: GrantFiled: April 18, 2023Date of Patent: October 22, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Lin-Yu Huang, Jia-Chuan You, Chia-Hao Chang, Tien-Lu Lin, Yu-Ming Lin, Chih-Hao Wang
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Publication number: 20240347463Abstract: Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary semiconductor device comprises a fin disposed over a substrate, a gate structure disposed over a channel region of the fin, such that the gate structure traverses source/drain regions of the fin, a device-level interlayer dielectric (ILD) layer of a multi-layer interconnect structure disposed over the substrate, wherein the device-level ILD layer includes a first dielectric layer, a second dielectric layer disposed over the first dielectric layer, and a third dielectric layer disposed over the second dielectric layer, wherein a material of the third dielectric layer is different than a material of the second dielectric layer and a material of the first dielectric layer. The semiconductor device further comprises a gate contact to the gate structure disposed in the device-level ILD layer and a source/drain contact to the source/drain regions disposed in the device-level ILD layer.Type: ApplicationFiled: June 25, 2024Publication date: October 17, 2024Inventors: Lin-Yu Huang, Sheng-Tsung Wang, Jia-Chuan You, Chia-Hao Chang, Tien-Lu Lin, Yu-Ming Lin, Chih-Hao Wang
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Publication number: 20240321746Abstract: A semiconductor structure includes a metal gate structure, a first gate spacer disposed on a first side of the metal gate structure, a source/drain feature disposed adjacent to the first gate spacer, a dielectric structure disposed over the source/drain feature, the first gate spacer, and the metal gate structure, and a contact feature disposed in the dielectric structure and electrically connected to the metal gate structure and the source/drain feature. The first gate spacer is between the source/drain feature and the metal gate structure. The contact feature straddles over the first gate spacer and has a tilted sidewall intersecting with the metal gate structure.Type: ApplicationFiled: June 3, 2024Publication date: September 26, 2024Inventors: Jia-Chuan You, Chia-Hao Chang, Tien-Lu Lin, Yu-Ming Lin, Chih-Hao Wang
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Patent number: 12087860Abstract: A method includes providing a semiconductor structure having metal gate structures (MGs), gate spacers disposed on sidewalls of the MGs, and source/drain (S/D) features disposed adjacent to the gate spacers; forming a first dielectric layer over the MGs and forming S/D contacts (MDs) over the S/D features; forming a second dielectric layer over the first dielectric layer, where portions of the second dielectric layer contact the MDs and the second dielectric layer is different from the first dielectric layer in composition; removing the portions of the second dielectric layer that contact the MDs; forming a conductive layer over the MDs and over the first dielectric layer; and removing portions of the conductive layer to form conductive features over the MDs.Type: GrantFiled: August 25, 2021Date of Patent: September 10, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Li-Zhen Yu, Jia-Chuan You, Chia-Hao Chang, Tien-Lu Lin, Yu-Ming Lin, Chih-Hao Wang
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Publication number: 20240290661Abstract: A method of forming an integrated circuit structure includes forming a first source/drain contact plug over and electrically coupling to a source/drain region of a transistor, forming a first dielectric hard mask overlapping a gate stack, recessing the first source/drain contact plug to form a first recess, forming a second dielectric hard mask in the first recess, recessing an inter-layer dielectric layer to form a second recess, and forming a third dielectric hard mask in the second recess. The third dielectric hard mask contacts both the first dielectric hard mask and the second dielectric hard mask.Type: ApplicationFiled: May 6, 2024Publication date: August 29, 2024Inventors: Lin-Yu Huang, Li-Zhen Yu, Sheng-Tsung Wang, Jia-Chuan You, Chia-Hao Chang, Tien-Lu Lin, Yu-Ming Lin, Chih-Hao Wang
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Patent number: 12057398Abstract: Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary semiconductor device comprises a fin disposed over a substrate, a gate structure disposed over a channel region of the fin, such that the gate structure traverses source/drain regions of the fin, a device-level interlayer dielectric (ILD) layer of a multi-layer interconnect structure disposed over the substrate, wherein the device-level ILD layer includes a first dielectric layer, a second dielectric layer disposed over the first dielectric layer, and a third dielectric layer disposed over the second dielectric layer, wherein a material of the third dielectric layer is different than a material of the second dielectric layer and a material of the first dielectric layer. The semiconductor device further comprises a gate contact to the gate structure disposed in the device-level ILD layer and a source/drain contact to the source/drain regions disposed in the device-level ILD layer.Type: GrantFiled: July 22, 2022Date of Patent: August 6, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Lin-Yu Huang, Sheng-Tsung Wang, Jia-Chuan You, Chia-Hao Chang, Tien-Lu Lin, Yu-Ming Lin, Chih-Hao Wang
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Patent number: 12040273Abstract: Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary semiconductor device comprises a fin disposed over a substrate, a gate structure disposed over a channel region of the fin, such that the gate structure traverses source/drain regions of the fin, a device-level interlayer dielectric (ILD) layer of a multi-layer interconnect structure disposed over the substrate, wherein the device-level ILD layer includes a first dielectric layer, a second dielectric layer disposed over the first dielectric layer, and a third dielectric layer disposed over the second dielectric layer, wherein a material of the third dielectric layer is different than a material of the second dielectric layer and a material of the first dielectric layer. The semiconductor device further comprises a gate contact to the gate structure disposed in the device-level ILD layer and a source/drain contact to the source/drain regions disposed in the device-level ILD layer.Type: GrantFiled: October 18, 2022Date of Patent: July 16, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Lin-Yu Huang, Sheng-Tsung Wang, Jia-Chuan You, Chia-Hao Chang, Tien-Lu Lin, Yu-Ming Lin, Chih-Hao Wang
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Patent number: 8629535Abstract: A method of forming an integrated circuit includes providing a buffer layer comprising a dielectric material above a layer of conductive material and providing a layer of mask material above the buffer layer. The mask material comprises amorphous carbon. The method also includes removing a portion of the buffer layer and the layer of mask material to form a mask. A feature is formed in the layer of conductive material according to the mask.Type: GrantFiled: September 23, 2011Date of Patent: January 14, 2014Assignee: GlobalFoundries Inc.Inventors: Richard J. Huang, Scott A. Bell, Srikanteswara Dakshina-Murthy, Philip A. Fisher, Richard C. Nguyen, Cyrus E. Tabery, Lu You
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Patent number: 8415256Abstract: During semiconductor fabrication homogeneous gap-filling is achieved by depositing a thin dielectric layer into the gap, post deposition curing, and then repeating deposition and post deposition curing until gap-filling is completed. Embodiments include depositing a layer of low deposition temperature gap-fill dielectric into a high aspect ratio opening, such as a shallow trench or a gap between closely spaced apart gate electrode structures, as at a thickness of about 10 ? to about 500 ?, curing after deposition, as by UV radiation or by heating at a temperature of about 400° C. to about 1000° C., depositing another layer of low deposition temperature gap-filled dielectric, and curing after deposition. Embodiments include separately depositing and separately curing multiple layers.Type: GrantFiled: December 30, 2010Date of Patent: April 9, 2013Inventors: Alexander Nickel, Lu You, Hirokazu Tokuno, Minh Tran, Minh Van Ngo, Hieu Pham, Erik Wilson, Robert Huertas
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Patent number: 8202810Abstract: A method for forming a single damascene and/or dual damascene, contact and interconnect structure, comprising: performing front end processing, depositing copper including a copper barrier, annealing the copper in at least 90% N2 with less than 10% H2, performing planarization, performing in-situ low-H NH3 plasma treatment and low Si—H SiN etch stop layer deposition, and performing remaining back end processing.Type: GrantFiled: January 9, 2008Date of Patent: June 19, 2012Assignee: Spansion LLCInventors: Alexander H. Nickel, Allen L. Evans, Minh Quoc Tran, Lu You, Minh Van Ngo, Pei-Yuan Gao, William S. Brennan, Erik Wilson, Sung Jin Kim, Hieu Trung Pham
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Publication number: 20120007221Abstract: A method of forming an integrated circuit includes providing a buffer layer comprising a dielectric material above a layer of conductive material and providing a layer of mask material above the buffer layer. The mask material comprises amorphous carbon. The method also includes removing a portion of the buffer layer and the layer of mask material to form a mask. A feature is formed in the layer of conductive material according to the mask.Type: ApplicationFiled: September 23, 2011Publication date: January 12, 2012Applicant: GLOBALFOUNDRIES Inc.Inventors: Richard J. Huang, Scott A. Bell, Srikanteswara Dakshina-Murthy, Philip A. Fisher, Richard C. Nguyen, Cyrus E. Tabery, Lu You
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Patent number: 8026169Abstract: Data retention in flash memory devices, such as mirrorbit devices, is improved by reducing the generation and/or diffusion of hydrogen ions during back end processing, such as annealing inlaid Cu. Embodiments include annealing inlaid Cu in an N2 atmosphere containing low H2 or no H2, and at temperatures less than 200° C., e.g., 100° C. to 150° C.Type: GrantFiled: November 6, 2006Date of Patent: September 27, 2011Assignee: Advanced Micro Devices, Inc.Inventors: Lu You, Alexander Nickel, Minh Q. Tran, Minh-Van Ngo, Hieu Pham, Erik Wilson, Hirokazu Tokuno, Amir Hossein Jafarpour, Inkuk Kang, Robert Huertas
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Patent number: 7884030Abstract: During semiconductor fabrication homogeneous gap-filling is achieved by depositing a thin dielectric layer into the gap, post deposition curing, and then repeating deposition and post deposition curing until gap-filling is completed. Embodiments include depositing a layer of low deposition temperature gap-fill dielectric into a high aspect ratio opening, such as a shallow trench or a gap between closely spaced apart gate electrode structures, as at a thickness of about 10 ? to about 500 ?, curing after deposition, as by UV radiation or by heating at a temperature of about 400° C. to about 1000° C., depositing another layer of low deposition temperature gap-filled dielectric, and curing after deposition. Embodiments include separately depositing and separately curing multiple layers.Type: GrantFiled: April 21, 2006Date of Patent: February 8, 2011Assignee: Advanced Micro Devices, Inc. and Spansion LLCInventors: Alexander Nickel, Lu You, Hirokazu Tokuno, Minh Tran, Minh Van Ngo, Hieu Pham, Erik Wilson, Robert Huertas
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Publication number: 20090176369Abstract: A method for forming a single damascene and/or dual damascene, contact and interconnect structure, comprising: performing front end processing, depositing copper including a copper barrier, annealing the copper in at least 90% N2 with less than 10% H2, performing planarization, performing in-situ low-H NH3 plasma treatment and low Si—H SiN etch stop layer deposition, and performing remaining back end processing.Type: ApplicationFiled: January 9, 2008Publication date: July 9, 2009Inventors: Alexander H. Nickel, Allen L. Evans, Minh Quoc Tran, Lu You, Minh Van Ngo, Pei-Yuan Gao, William S. Brennan, Eric Wilson, Sung Jin Kim, Hieu Trung Pham
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Patent number: 7534732Abstract: Cu interconnects are formed with composite capping layers for reduced electromigration, improved adhesion between Cu and the capping layer, and reduced charge loss in associated non-volatile transistors. Embodiments include depositing a first relatively thin silicon nitride layer having a relatively high concentration of Si—H bonds on the upper surface of a layer of Cu for improved adhesion and reduced electromigration, and depositing a second relatively thick silicon nitride layer having a relatively low concentration of Si—H bonds on the first silicon nitride layer for reduced charge loss.Type: GrantFiled: February 17, 2006Date of Patent: May 19, 2009Assignees: Spansion LLC, Advanced Micro Devices, Inc.Inventors: Minh Van Ngo, Erik Wilson, Hieu Pham, Robert Huertas, Lu You, Hirokazu Tokuno, Alexander Nickel, Minh Tran
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Patent number: 7521304Abstract: A method of forming an integrated circuit includes providing a buffer layer comprising a dielectric material above a layer of conductive material and providing a layer of mask material above the buffer layer. The mask material comprises amorphous carbon. The method also includes removing a portion of the buffer layer and the layer of mask material to form a mask. A feature is formed in the layer of conductive material according to the mask.Type: GrantFiled: August 29, 2002Date of Patent: April 21, 2009Assignee: Advanced Micro Devices, Inc.Inventors: Richard J. Huang, Scott A. Bell, Srikanteswara Dakshina-Murthy, Philip A. Fisher, Richard C. Nguyen, Cyrus E. Tabery, Lu You
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Patent number: 7494885Abstract: According to one exemplary embodiment, a method for forming a field effect transistor on a substrate comprises a step of forming disposable spacers adjacent to a gate stack situated on the substrate, where the disposable spacers comprise amorphous carbon. The disposable spacers can be formed by depositing a layer of amorphous carbon on the gate stack and anisotropically etching the layer of amorphous carbon. The method further comprises forming source and drain regions in the substrate, where the source and drain regions are situated adjacent to the disposable spacers. According to this exemplary embodiment, the method further comprises removing the disposable spacers, where the removal of the disposable spacers causes substantially no gouging in the substrate. The disposable spacers can be removed by using a dry etch process. The method can further comprise forming extension regions in the substrate adjacent to the gate stack prior to forming the disposable spacers.Type: GrantFiled: April 5, 2004Date of Patent: February 24, 2009Assignee: Advanced Micro Devices, Inc.Inventors: Mario M. Pelella, Darin A. Chan, Kei-Leong Ho, Lu You
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Patent number: 7378310Abstract: A method for manufacturing a memory device having a metal nanocrystal charge storage structure. A substrate is provided and a first layer of dielectric material is grown on the substrate. A layer of metal oxide having a first heat of formation is formed on the first layer of dielectric material. A metal layer having a second heat of formation is formed on the metal oxide layer. The second heat of formation is greater than the first heat of formation. The metal oxide layer and the metal layer are annealed which causes the metal layer to reduce the metal oxide layer to metallic form, which then agglomerates to form metal islands. The metal layer becomes oxidized thereby embedding the metal islands within an oxide layer to form a nanocrystal layer. A control oxide is formed over the nanocrystal layer and a gate electrode is formed on the control oxide.Type: GrantFiled: April 27, 2005Date of Patent: May 27, 2008Assignees: Spansion LLC, Advanced Micro Devices, Inc.Inventors: Connie Pin-Chin Wang, Zoran Krivokapic, Suzette Keefe Pangrle, Robert Chiu, Lu You
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Publication number: 20080108193Abstract: Data retention in flash memory devices, such as mirrorbit devices, is improved by reducing the generation and/or diffusion of hydrogen ions during back end processing, such as annealing inlaid Cu. Embodiments include annealing inlaid Cu in an N2 atmosphere containing low H2 or no H2, and at temperatures less than 200° C., e.g., 100° C. to 150° C.Type: ApplicationFiled: November 6, 2006Publication date: May 8, 2008Inventors: Lu You, Alexander Nickel, Minh Q. Tran, Minh-Van Ngo, Hieu Pham, Erik Wilson, Hirokazu Tokuno, Amir Hossein Jafarpour, Inkuk Kang, Robert Huertas