Patents by Inventor Lu-Yung Lin

Lu-Yung Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11977655
    Abstract: A computer-implemented method, a computer system, and computer program product for associating security events. The method includes obtaining a result of implementation of one or more Locality-Sensitive Hashing (LSH) functions to feature data of a first event detected by a first device. The method also includes mapping the result to one or more positions in a data structure. In response to data elements of the one or more positions indicating first information associating with the one or more positions exists in a storage, the method includes obtaining the first information from the storage. The method further includes sending the first information to the first device.
    Type: Grant
    Filed: August 25, 2020
    Date of Patent: May 7, 2024
    Assignee: International Business Machines Corporation
    Inventors: Jia-Sian Jhang, Chen-Yu Kuo, Hsiao-Yung Chen, Lu Cheng Lin, Chien Wen Jung
  • Publication number: 20230284436
    Abstract: The present disclosure provides a semiconductor device and a fabricating method thereof, and which includes a substrate, bit lines, bit line contacts, a gate structure, a first oxidized interface layer, and a second oxidized interface layer. The bit lines are disposed on the substrate, and the bit line contacts are disposed below the bit lines. The gate structure is disposed on the substrate, wherein each bit line and the gate structure respectively include a semiconductor layer, a conductive layer, and a covering layer stacked from bottom to top. The first oxidized interface layer is disposed between each bit line contact and the semiconductor layer of each bit line. The second oxidized interface layer is disposed within the semiconductor layer of the gate structure, wherein a topmost surface of the first oxidized interface layer is higher than a topmost surface of the second oxidized interface layer.
    Type: Application
    Filed: April 21, 2022
    Publication date: September 7, 2023
    Applicant: Fujian Jinhua Integrated Circuit Co., Ltd.
    Inventors: Yukihiro Nagai, Lu-Yung Lin, Chia-Wei Wu, Tsun-Min Cheng, Yu Chun Lin, Zheng Guo Zhang, Sun-Hung Chen, Wu Xiang Li, Hsiao-Han Lin