Abstract: A diffuse reflectance spectroscopic measurement system for a medium to be analysed, including a substrate; an electroluminescent device, arranged on a first zone of a surface of the substrate, and configured to emit light radiation, the electroluminescent device having an output surface, through which the light radiation is transmitted towards the medium to be analysed; a first photodetector, arranged on a portion of the output surface of the electroluminescent device so as to receive a portion of the light radiation and so that the output surface retains a free zone; a second photodetector, arranged on a second zone of the surface of the substrate so as to receive the light radiation transmitted by the free zone and diffusely reflected by the medium to be analysed.

Abstract: A current-assisted photonic demodulator includes a detection portion having two doped modulation regions and two doped collection regions, lying flush with a first face covered by a dielectric layer. Electrodes pass through the dielectric layer and come into contact with the doped regions. In addition, intermediate electrodes partly pass through the dielectric layer and are spaced apart from the first face by a non-zero distance, each being located, in projection in a main plane, between one of the doped modulation regions and the adjacent doped collection region.

Abstract: A method for measuring the attenuation coefficient of a scattering and/or absorbing part of a body using diffuse reflectance spectroscopy. The method includes emitting optical radiation, the intensity and/or the optical frequency of which are modulated, with at least part of the optical radiation, called a probe signal, irradiating the body; receiving part of the probe signal, called a backscattered signal, that is scattered and reflected by the body and measuring the path length of the backscattered signal; measuring the reflectance of the part of the body traversed by the backscattered signal; and computing the attenuation coefficient based on the measured path length and on the reflectance.

Abstract: A current-assisted photonic demodulator includes a detection portion having two doped modulation regions and two doped collection regions, lying flush with a first face covered by a dielectric layer. Electrodes pass through the dielectric layer and come into contact with the doped regions. In addition, intermediate electrodes partly pass through the dielectric layer and are spaced apart from the first face by a non-zero distance, each being located, in projection in a main plane, between one of the doped modulation regions and the adjacent doped collection region.

Abstract: The invention relates to a method for manufacturing at least one passivated planar photodiode 1, comprising the following steps: producing a semiconductor detection portion 10; depositing a dielectric passivation layer 20; producing a peripheral portion 21 made from a doped semiconductor material; diffusion-annealing the doping elements from the peripheral portion 21 into the semiconductor detection portion 10, forming a doped peripheral region 14; producing a doped upper region 11, surrounded by the doped peripheral region 14.

Abstract: The present disclosure relates to a method of manufacturing a semiconductor device, including the successive steps of: a) forming doped germanium on a germanium layer covering a first support; b) covering said doped germanium with a second support; and c) removing the first support.

Abstract: The invention relates to an optoelectronic device (1) comprising: at least one diode (2) that has a semiconductor portion (20) in which a PN or PIN junction is formed; a peripheral conductive layer (40) that extends in the main plane in such a way as to surround the semiconductor portion (20); a peripheral piezoelectric portion (30) that extends in the main plane in such a way as to surround the semiconductor portion (20); a first polarizing electric circuit (30) capable of generating an electric field in the peripheral piezoelectric portion (30) by applying an electric potential at least to the peripheral conductive layer (40) so as to induce a deformation of the peripheral piezoelectric portion (30) in the direction of the main plane, thus causing a tensile deformation of the semiconductor portion (20) in the main plane.

Abstract: The present disclosure relates to a method of manufacturing a semiconductor device, including the successive steps of: a) forming doped germanium on a germanium layer covering a first support; b) covering said doped germanium with a second support; and c) removing the first support.

Abstract: The invention relates to a method for manufacturing at least one passivated planar photodiode 1, comprising the following steps: producing a semiconductor detection portion 10; depositing a dielectric passivation layer 20; producing a peripheral portion 21 made from a doped semiconductor material; diffusion-annealing the doping elements from the peripheral portion 21 into the semiconductor detection portion 10, forming a doped peripheral region 14; producing a doped upper region 11, surrounded by the doped peripheral region 14.

Abstract: A gas sensor (20) comprising a substrate (231); an objective (211) situated on the substrate (231), adapted to collect a light beam (212, 213) emitted by a light source (210); an eyepiece (250) situated on the substrate (231), adapted to collect an incident light beam to focus it on a detector (251); return reflective surfaces (281, 282), situated facing said substrate; and at least one field lens (221), arranged on an intermediate reflective surface (222) formed on the substrate (231), and adapted to deviate the rays (213) of the light beam emitted by the light source, to bring them closer to the optical axis of the eyepiece (250).

Abstract: The present invention proposes a payment transaction system, comprising: •—a merchant server; •—a client device for connecting to the merchant server and interacting with same; •—a secure customer data server, •—a secure payment server distinct from said secure customer data server, • said secure customer data server having a memory storing payment instrument data in relation with a plurality of users, and being capable of interacting with said client device by: • receiving a payment instrument data request corresponding to a given user account, • establishing a secure session between said client device and the secure payment data server, • within that session, performing a secure, challenge-response type authentication transaction, and • upon successful authentication, receiving payment instrument data at said client device for providing to said merchant server, at least part of said data being ciphered, • said client device being adapted to decipher said ciphered part of said data and to transmit to said me

Abstract: A gas sensor (20) comprising a substrate (231); an objective (211) situated on the substrate (231), adapted to collect a light beam (212, 213) emitted by a light source (210); an eyepiece (250) situated on the substrate (231), adapted to collect an incident light beam to focus it on a detector (251); return reflective surfaces (281, 282), situated facing said substrate; and at least one field lens (221), arranged on an intermediate reflective surface (222) formed on the substrate (231), and adapted to deviate the rays (213) of the light beam emitted by the light source, to bring them closer to the optical axis of the eyepiece (250).

Abstract: A radiation imager including: a detector block including at least one detector configured to emit an optical signal from incident radiation to be imaged; a reading block that converts the optical signal into an electrical signal, including a plurality of photodetectors; a plurality of resin portions between the detector block and the photodetectors, in contact with the detector block and in contact with the photodetectors, the resin portions being separated by air, the resin portions including at least a part with cross-section increasing from the detector block to the reading block.

Abstract: A radiation imager including: a reading block; a first substrate; a plurality of portions made from a first material with a first optical index between the first substrate and the reading block; a second material at a periphery of at least one of the portions, the second material having a second optical index lower than the first optical index; and areas made from a third material surrounding at least ends of the portions oriented on a same side as the reading block, the areas made from a third material obtained by applying a layer made from a third material to the reading block and penetration of the end of the at least one portion made from a first material in the layer made from a third material.

Abstract: The invention relates to an optical device produced by cutting a wafer-scale package comprising at least one optical module formed from a substrate (1) pierced with a plurality of through-holes (2) and optical elements disposed in the holes. According to the invention, at least one of the holes receives two lenses (3, 4) made from at least one polymer material transparent in the 400 nm-700 nm range, each of the lenses being defined by an external diopter and an internal diopter. The invention is characterised in that a space is formed between the internal diopters of two lenses and in that the substrate contains no polymer material between two adjacent through-holes.

Abstract: The invention relates to an optical imaging system comprising: an external lens structure (16,10; 36, 30), with a lens and a substrate; at least one internal lens structure (17, 10; 37, 30), with a lens and a substrate; an image capture structure (110, 310); and a diaphragm (15, 35), characterized in that this diaphragm is located between the lens of the external lens structure and the lens of said at least one internal lens structure and placed away from each of said structures, and in that it is formed in a substrate (10, 30) of a lens structure.

Abstract: Method for fabricating a substrate comprising a nanostructured surface for an organic light emitting diode OLED, in which a layer of an organic resin or of a mineral material having a first nanostructuration is prepared by nano-imprint; the organic resin or mineral material is heated to a temperature equal to or higher than its glass transition temperature Tg or its melting point, and the organic resin or the mineral material is maintained at this temperature for a time tR called annealing time, whereby the organic resin or the mineral material flows and the first nanostructuration of the layer of organic resin or of mineral material is modified to produce a second nanostructuration; the organic resin or the mineral material is cooled.

Abstract: A hardware device connected to a network access point to authenticate itself to a server is disclosed. The device stores authentication software, and applicative data. The device is used to generate a one-time password to uniquely identify itself to a server.

Abstract: Method for fabricating a substrate comprising a nanostructured surface for an organic light emitting diode OLED, in which a layer of an organic resin or of a mineral material having a first nanostructuration is prepared by nano-imprint; the organic resin or mineral material is heated to a temperature equal to or higher than its glass transition temperature Tg or its melting point, and the organic resin or the mineral material is maintained at this temperature for a time tR called annealing time, whereby the organic resin or the mineral material flows and the first nanostructuration of the layer of organic resin or of mineral material is modified to produce a second nanostructuration; the organic resin or the mineral material is cooled.