Abstract: A thermal imaging apparatus comprising: a thermal detector device (100) comprising an array of thermal sensing pixels (102) and signal processing circuitry (104) coupled to the detector device (100). The circuitry (104) supports a background identifier (110) and a pixel classifier (112), the background identifier (110) comprising a common intensity identifier (114) and an expected background intensity calculator (116). The background identifier (110) receives pixel measurement data captured by the detector device (100) in respect of pixels of the array (102) and the common intensity identifier (114) identifies a largest number of substantially the same pixel intensity values from the pixel measurement data. The expected background intensity calculator (116) uses the largest number of substantially the same pixel intensity values to generate a model of expected background intensity levels.

Abstract: In a heating appliance comprising a substrate for receiving an item of cookware, a method of measuring reflectivity comprises emitting a time-varying electromagnetic signal from a first side of the substrate, a portion of the time-varying electromagnetic signal propagating through the substrate. Electromagnetic radiation is then received at the first side of the substrate, the received electromagnetic radiation comprising a background ambient component received and a component reflected by the substrate. A gain factor is applied to translate the received electromagnetic radiation to a receive electrical signal. An offset signal component is then identified from the receive electrical signal, the offset signal component arising from the background ambient component of the received electromagnetic radiation.

Abstract: A method of digitally processing an image comprises: generating an intensity distribution model (170) in respect of at least a portion of the array of sensing pixels (102) of a detector device (100). The array of sensing pixels comprises clusters of pixels. A pixel (140) from the array of sensing pixels is then selected (202) and a first distance and a second distance from the selected pixel to a first neighbouring pixel (142) and a second neighbouring pixel (144), respectively, are determined (402) and the intensity distribution model (170) referenced (406) by the first distance is used to calculate a first weight and a second weight to apply to the first and second neighbouring pixels, respectively. The first distance comprises an intra-cluster distance and the second distance comprises an inter-cluster distance, the intra-cluster distance being different from the inter-cluster distance.

Abstract: A method of generating a de-interlacing filter comprises: analysing a pixel array comprising an interlacing pattern of pixels. The interlacing pattern of pixels comprises first and second pluralities of pixels configured to be read during a first measurement subframe and a second measurement subframe, respectively. An n-state representation of the interlacing pattern of pixels is generated and distinguishes between the first plurality of pixels and the second plurality of pixels. The n-state representation of the interlacing pattern is translated to a spatial frequency domain, thereby generating a spatial frequency domain representation of the n-state representation of the interlacing pattern. A DC signal component is then removed from the spatial frequency domain representation of the n-state representation of the interlacing pattern, thereby generating a DC-less spatial frequency domain representation.

Abstract: A method of digitally processing a plurality of pixels of an image captured using an array of sensing pixels of an optical sensor device. The method comprises identifying a measurement pixel of the plurality of pixels corresponding to a measurement point on a target to be measured. The method then comprises identifying a number of pixels of the plurality of pixels neighbouring the measurement pixel, the number of pixels having a number of intensity values, respectively. A curve is then fitted to the number of pixels and the number of respective intensity values. An estimated intensity value is then determined from the curve in respect of the measurement pixel, thereby simulating a predetermined field of view in respect of the measurement pixel narrower than an actual field of view of the measurement pixel.

Abstract: A method of digitally processing an image comprises: generating an intensity distribution model (170) in respect of at least a portion of the array of sensing pixels (102) of a detector device (100). The array of sensing pixels comprises clusters of pixels. A pixel (140) from the array of sensing pixels is then selected (202) and a first distance and a second distance from the selected pixel to a first neighbouring pixel (142) and a second neighbouring pixel (144), respectively, are determined (402) and the intensity distribution model (170) referenced (406) by the first distance is used to calculate a first weight and a second weight to apply to the first and second neighbouring pixels, respectively. The first distance comprises an intra-cluster distance and the second distance comprises an inter-cluster distance, the intra-cluster distance being different from the inter-cluster distance.

Abstract: A method of measuring temperature based upon a system of equations applying Stefan-Boltzmann's law and using a measurement value for an object to be measured and an ambient temperature value (Ta) comprises: pre-calculating (200, 202) a first vector (LUT1) and a second vector (LUT2). The first vector (LUT1) is a series of values proportional to received power based upon respective temperature values and in respect of a predetermined generic range of temperatures. The second vector (LUT2) is a series of sensitivity characteristic factor values based upon expected measured temperature values and in respect of a predetermined range of expected object measured temperatures. The first vector (LUT1) and the second vector (LUT2) are used (206) to generate a temporary vector (LUTT) of a series of values limited to the ambient temperature value to solve the system of equations in respect of the measurement value for the object, thereby determining (208) a temperature (To) for the object from the measurement value.

Abstract: A thermal imaging apparatus comprising: a thermal detector device (100) comprising an array of thermal sensing pixels (102) and signal processing circuitry (104) coupled to the detector device (100). The circuitry (104) supports a background identifier (110) and a pixel classifier (112), the background identifier (110) comprising a common intensity identifier (114) and an expected background intensity calculator (116). The background identifier (110) receives pixel measurement data captured by the detector device (100) in respect of pixels of the array (102) and the common intensity identifier (114) identifies a largest number of substantially the same pixel intensity values from the pixel measurement data. The expected background intensity calculator (116) uses the largest number of substantially the same pixel intensity values to generate a model of expected background intensity levels.

Abstract: A method of measuring temperature based upon a system of equations applying Stefan-Boltzmann's law and using a measurement value for an object to be measured and an ambient temperature value (Ta) comprises: pre-calculating (200, 202) a first vector (LUT1) and a second vector (LUT2). The first vector (LUT1) is a series of values proportional to received power based upon respective temperature values and in respect of a predetermined generic range of temperatures. The second vector (LUT2) is a series of sensitivity characteristic factor values based upon expected measured temperature values and in respect of a predetermined range of expected object measured temperatures. The first vector (LUT1) and the second vector (LUT2) are used (206) to generate a temporary vector (LUTT) of a series of values limited to the ambient temperature value to solve the system of equations in respect of the measurement value for the object, thereby determining (208) a temperature (To) for the object from the measurement value.

Abstract: An electronic device for measuring an ambient temperature (Tair) of the environment of an electronic device is described. It comprises at least one integrated infrared sensor, a blinded window preventing infrared radiation to directly impinge on the integrated infrared sensor and being in thermal contact with the environment as well as with a cover of the device resulting in the blinded window being at a surface temperature (Tsurface). The at least one integrated infrared sensor is adapted for sensing the temperature of the blinded window (Tsurface). The device also comprises at least one absolute temperature sensor for measuring a temperature of the at least one infrared sensor (Tsensor) itself, and a processing means for determining a temperature difference (?T) between the sensed surface temperature (Tsurface) and the temperature of the infrared sensor (Tsensor) and for calculating based thereon the ambient temperature (Tair).

Abstract: A chip for radiation measurements, the chip comprising a first substrate comprising a first sensor and a second sensor. The chip moreover comprises a second substrate comprising a first cavity and a second cavity both with oblique walls. An internal layer is present on the inside of the second cavity. The second substrate is sealed to the first substrate with the cavities on the inside such that the first cavity is above the first sensor and the second cavity is above the second sensor.

Abstract: An electronic device for measuring an ambient temperature (Tair) of the environment of an electronic device is described. It comprises at least one integrated infrared sensor, a blinded window preventing infrared radiation to directly impinge on the integrated infrared sensor and being in thermal contact with the environment as well as with a cover of the device resulting in the blinded window being at a surface temperature (Tsurface). The at least one integrated infrared sensor is adapted for sensing the temperature of the blinded window (Tsurface). The device also comprises at least one absolute temperature sensor for measuring a temperature of the at least one infrared sensor (Tsensor) itself, and a processing means for determining a temperature difference (?T) between the sensed surface temperature (Tsurface) and the temperature of the infrared sensor (Tsensor) and for calculating based thereon the ambient temperature (Tair).

Abstract: The present invention relates to an integrated infrared sensor device, comprising a sensor substrate and a filter substrate. The sensor substrate has a back surface and a front surface opposite the back surface, in which the back surface has a cavity defined therein and the front surface has at least one infrared sensing element formed therein or arranged thereon, covered with a cap for protecting the at least one sensing element, e.g. against mechanical damage and dust, and/or against stray radiation. The filter substrate is arranged on the back surface of the sensor substrate such that the filter substrate at least partially covers the cavity. The filter substrate is adapted in shape and composition to transmit infrared radiation and to attenuate radiation in at least part of the visible light spectrum.

Abstract: A method of producing a substantially rectangular semiconductor device having at least one corner truncation or corner cut-out or side cut-out, comprises: a) providing a semiconductor substrate; b) making at least one opening through the substrate by means of etching; and c) cutting the substrate along a first pair of parallel lines, and along a second pair of parallel lines perpendicular to the first pair. At least one line of the first/second pair passes through said opening. Two lines may pass through said opening. More than one opening may be provided for said device. The opening may be located at a corner or on a side of the otherwise rectangular device. The etching may be any combination of existing isotropic/anisotropic front/back etching techniques.

Abstract: A chip for radiation measurements, the chip comprising a first substrate comprising a first sensor and a second sensor. The chip moreover comprises a second substrate comprising a first cavity and a second cavity both with oblique walls. An internal layer is present on the inside of the second cavity. The second substrate is sealed to the first substrate with the cavities on the inside such that the first cavity is above the first sensor and the second cavity is above the second sensor.

Abstract: An infrared sensor for temperature sensing comprises a cap covering a substrate; an IR-radiation filtering window in the cap transparent to IR radiation; a first sensing element comprising a set of N thermocouples on the substrate covered by the cap, whose hot junctions may receive radiation; a second sensing element comprising a set of N thermocouples on the substrate covered by the cap whose hot junctions may not receive radiation; first connection modules for connecting a number N1 of thermocouples of the first sensing element, second connection modules for connecting a number N2 of thermocouples of the second sensing; connecting means for connecting an output of the first connection modules of the first sensing element with an output of the second connection modules of the second sensing element, and an output of the combined outputs of the sensing elements.

Abstract: An infrared sensor for temperature sensing comprises a cap covering a substrate; an IR-radiation filtering window in the cap transparent to IR radiation; a first sensing element comprising a set of N thermocouples on the substrate covered by the cap, whose hot junctions may receive radiation; a second sensing element comprising a set of N thermocouples on the substrate covered by the cap whose hot junctions may not receive radiation; first connection modules for connecting a number N1 of thermocouples of the first sensing element, second connection modules for connecting a number N2 of thermocouples of the second sensing; connecting means for connecting an output of the first connection modules of the first sensing element with an output of the second connection modules of the second sensing element, and an output of the combined outputs of the sensing elements.

Abstract: An infrared sensor for temperature sensing comprises a cap covering a substrate; an IR-radiation filtering window in the cap transparent to IR radiation; a first sensing element comprising a set of N thermocouples on the substrate covered by the cap, whose hot junctions may receive radiation; a second sensing element comprising a set of N thermocouples on the substrate covered by the cap whose hot junctions may not receive radiation; first connection modules for connecting a number N1 of thermocouples of the first sensing element, second connection modules for connecting a number N2 of thermocouples of the second sensing; connecting means for connecting an output of the first connection modules of the first sensing element with an output of the second connection modules of the second sensing element, and an output of the combined outputs of the sensing elements.

Abstract: The present invention relates to an integrated infrared sensor device, comprising a sensor substrate and a filter substrate. The sensor substrate has a back surface and a front surface opposite the back surface, in which the back surface has a cavity defined therein and the front surface has at least one infrared sensing element formed therein or arranged thereon, covered with a cap for protecting the at least one sensing element, e.g. against mechanical damage and dust, and/or against stray radiation. The filter substrate is arranged on the back surface of the sensor substrate such that the filter substrate at least partially covers the cavity. The filter substrate is adapted in shape and composition to transmit infrared radiation and to attenuate radiation in at least part of the visible light spectrum.

Abstract: A semiconductor device comprising an infrared sensor assembly for sensing infrared radiation is described. The infrared sensor assembly comprises a single sensing element for sensing infrared radiation and an aperture means comprising a plurality of apertures. The sensing element and the aperture means thereby are positioned with respect to each other so that the plurality of apertures are positioned in front of the same, single sensing element so that the plurality of apertures limit the field of view of the same, single sensing element for impinging radiation.