Abstract: A method for measuring resistance changes is described to study electromigration induced failures in conductive patterns. This method can provide a basis for lifetime predictions based on low value failure criteria, i.e. small resistance changes in the conductive patterns in a limited period of time. Two essentially identical so-called test and reference structures are placed close to each other on the same substrate and submitted to at least one sequence of a stress period and a measurement period. During a stress period, a DC current with a high current density is applied to the test structure thereby enhancing electromigration, while substantially simultaneous an AC current is applied to the reference structure leading to the same amount of power dissipation in said reference structure as the amount of power dissipation in said test structure, introduced by said DC stress current.

Abstract: A method for evaluating the thermal impedance of packaged semiconductor chips. A measuring apparatus includes a thermostatic bath filled with a dielectric liquid and a temperature sensor for measuring the temperature of the bath. The semiconductor chip is subjected to a calibration step followed by a thermal response measurement step. Increasing the power pulse length allows measurement of the steady-state junction-to-case thermal resistance. The measuring apparatus and method is further used for tracing in-situ degradation of packaged semiconductor chips due to power cycling.

Abstract: An apparatus and method for measuring a parameter of a sample or component at a measurement temperature, wherein the parameter and the measurement temperature are measured at substantially the same time. A temperature coefficient of the sample or component is also established by using temperature fluctuations measured at or near the sample at the time at which the parameter is measured. The temperature coefficient is used to correct the measured parameter data and enhance its stability.

Abstract: An apparatus and method for measuring a parameter of a sample or component at a measurement temperature, wherein the parameter and the measurement temperature are measured at substantially the same time. A temperature coefficient of the sample or component is also established by using temperature fluctuations measured at or near the sample at the time at which the parameter is measured. The temperature coefficient is used to correct the measured parameter data and enhance its stability.

Abstract: A system for evaluating the thermal impedance of packaged semiconductor chips. The measuring apparatus includes a thermostatic bath filled with a dielectric liquid and a temperature sensor for measuring the temperature of the bath. The semiconductor chip is subjected to a calibration step followed by a thermal response measurement step. Increasing the power pulse length allows measurement of the steady-state junction-to-case thermal resistance. The measuring apparatus and method is further used for tracing in-situ degradation of packaged semiconductor chips due to power cycling.