Abstract: A waveguide-coupled Silicon Germanium (SiGe) photodetector. A p-n silicon junction is formed in a silicon substrate by an n-doped silicon region and a p-doped silicon region, a polysilicon rib is formed on the silicon substrate to provide a waveguide core for an optical mode of radiation, and an SiGe pocket is formed in the silicon substrate along a length of the polysilicon rib and contiguous with the p-n silicon junction. An optical mode of radiation, when present, substantially overlaps with the SiGe pocket so as to generate photocarriers in the SiGe pocket. An electric field arising from the p-n silicon junction significantly facilitates a flow of the generated photocarriers through the SiGe pocket. In one example, such photodetectors have been fabricated using a standard CMOS semiconductor process technology without requiring changes to the process flow (i.e., “zero-change CMOS”).

Abstract: Semiconductor devices, such as photonics devices, employ substantially curved-shaped Silicon-Germanium (SiGe) structures and are fabricated using zero-change CMOS fabrication process technologies. In one example, a closed-loop resonator waveguide-coupled photodetector includes a silicon resonator structure formed in a silicon substrate, interdigitated n-doped well-implant regions and p-doped well-implant regions forming multiple silicon p-n junctions around the silicon resonator structure, and a closed-loop SiGe photocarrier generation region formed in a pocket within the interdigitated n-doped and p-doped well implant regions. The closed-loop SiGe region is located so as to substantially overlap with an optical mode of radiation when present in the silicon resonator structure, and traverses the multiple silicon p-n junctions around the silicon resonator structure.

Abstract: A photonic design automation (PDA) tool to facilitate design of semiconductor photonic devices is described. In one example, the PDA tool includes a process design library including one or more photonics parameterized cells (pCells), a plurality of processor-executable photonics design functions including a design rule check (DRC) violation removal function, and a semiconductor technology-dependent parameter file including a plurality of design rules that define allowed semiconductor design patterns to be converted to a plurality of semiconductor fabrication mask designs in a first semiconductor technology. The PDA tool supports a graphical user interface (GUI) to provide access to the library of photonic pCells to create intuitive physical property layers for a photonic device, and processes the physical property layers using the DRC violation removal function and the design rules to automatically generate a plurality of mask design layers for a “DRC clean” physical layout of the photonics device.

Abstract: Semiconductor devices, such as photonics devices, employ substantially curved-shaped Silicon-Germanium (SiGe) structures and are fabricated using zero-change CMOS fabrication process technologies. In one example, a closed-loop resonator waveguide-coupled photodetector includes a silicon resonator structure formed in a silicon substrate, interdigitated n-doped well-implant regions and p-doped well-implant regions forming multiple silicon p-n junctions around the silicon resonator structure, and a closed-loop SiGe photocarrier generation region formed in a pocket within the interdigitated n-doped and p-doped well implant regions. The closed-loop SiGe region is located so as to substantially overlap with an optical mode of radiation when present in the silicon resonator structure, and traverses the multiple silicon p-n junctions around the silicon resonator structure.

Abstract: A photonic design automation (PDA) tool to facilitate design of semiconductor photonic devices is described. In one example, the PDA tool includes a process design library including one or more photonics parameterized cells (pCells), a plurality of processor-executable photonics design functions including a design rule check (DRC) violation removal function, and a semiconductor technology-dependent parameter file including a plurality of design rules that define allowed semiconductor design patterns to be converted to a plurality of semiconductor fabrication mask designs in a first semiconductor technology. The PDA tool supports a graphical user interface (GUI) to provide access to the library of photonic pCells to create intuitive physical property layers for a photonic device, and processes the physical property layers using the DRC violation removal function and the design rules to automatically generate a plurality of mask design layers for a “DRC clean” physical layout of the photonics device.

Abstract: Semiconductor devices, such as photonics devices, employ substantially curved-shaped Silicon-Germanium (SiGe) structures and are fabricated using zero-change CMOS fabrication process technologies. In one example, a closed-loop resonator waveguide-coupled photodetector includes a silicon resonator structure formed in a silicon substrate, interdigitated n-doped well-implant regions and p-doped well-implant regions forming multiple silicon p-n junctions around the silicon resonator structure, and a closed-loop SiGe photocarrier generation region formed in a pocket within the interdigitated n-doped and p-doped well implant regions. The closed-loop SiGe region is located so as to substantially overlap with an optical mode of radiation when present in the silicon resonator structure, and traverses the multiple silicon p-n junctions around the silicon resonator structure.

Abstract: A photonic design automation (PDA) tool to facilitate design of semiconductor photonic devices is described. In one example, the PDA tool includes a process design library including one or more photonics parameterized cells (pCells), a plurality of processor-executable photonics design functions including a design rule check (DRC) violation removal function, and a semiconductor technology-dependent parameter file including a plurality of design rules that define allowed semiconductor design patterns to be converted to a plurality of semiconductor fabrication mask designs in a first semiconductor technology. The PDA tool supports a graphical user interface (GUI) to provide access to the library of photonic pCells to create intuitive physical property layers for a photonic device, and processes the physical property layers using the DRC violation removal function and the design rules to automatically generate a plurality of mask design layers for a “DRC clean” physical layout of the photonics device.

Abstract: Semiconductor devices, such as photonics devices, employ substantially curved-shaped Silicon-Germanium (SiGe) structures and are fabricated using zero-change CMOS fabrication process technologies. In one example, a closed-loop resonator waveguide-coupled photodetector includes a silicon resonator structure formed in a silicon substrate, interdigitated n-doped well-implant regions and p-doped well-implant regions forming multiple silicon p-n junctions around the silicon resonator structure, and a closed-loop SiGe photocarrier generation region formed in a pocket within the interdigitated n-doped and p-doped well implant regions. The closed-loop SiGe region is located so as to substantially overlap with an optical mode of radiation when present in the silicon resonator structure, and traverses the multiple silicon p-n junctions around the silicon resonator structure.

Abstract: A waveguide-coupled Silicon Germanium (SiGe) photodetector. A p-n silicon junction is formed in a silicon substrate by an n-doped silicon region and a p-doped silicon region, a polysilicon rib is formed on the silicon substrate to provide a waveguide core for an optical mode of radiation, and an SiGe pocket is formed in the silicon substrate along a length of the polysilicon rib and contiguous with the p-n silicon junction. An optical mode of radiation, when present, substantially overlaps with the SiGe pocket so as to generate photocarriers in the SiGe pocket. An electric field arising from the p-n silicon junction significantly facilitates a flow of the generated photocarriers through the SiGe pocket. In one example, such photodetectors have been fabricated using a standard CMOS semiconductor process technology without requiring changes to the process flow (i.e., “zero-change CMOS”).

Abstract: Second-order optical nonlinear material arranged on a substrate, wherein the second-order optical nonlinear material comprises at least two different materials arranged in layers on the substrate. The layers are arranged on each other in a predetermined order based on the type of material and/or orientation of the layer. The predetermined order is chosen so that the layers of the at least two different materials possess no macroscopic centrosymmetry with respect to their material and/or orientation.

Abstract: A photonic design automation (PDA) tool to facilitate design of semiconductor photonic devices is described. In one example, the PDA tool includes a process design library including one or more photonics parameterized cells (pCells), a plurality of processor-executable photonics design functions including a design rule check (DRC) violation removal function, and a semiconductor technology-dependent parameter file including a plurality of design rules that define allowed semiconductor design patterns to be converted to a plurality of semiconductor fabrication mask designs in a first semiconductor technology. The PDA tool supports a graphical user interface (GUI) to provide access to the library of photonic pCells to create intuitive physical property layers for a photonic device, and processes the physical property layers using the DRC violation removal function and the design rules to automatically generate a plurality of mask design layers for a “DRC clean” physical layout of the photonics device.

Abstract: An electro-optical device for processing an optical signal, comprises an electrode that is arranged and designed so that the optical signal at least partially intrudes the electrode when the optical signal is processed in the electro-optical device. An insulator is arranged adjacent to the electrode so that one face of the electrode contacts the insulator. A gate is arranged so that a voltage is applicable between the electrode and the gate such that a charge layer is induced on the face of the electrode that is contacting the insulator.