Patents by Inventor Luca Crespi

Luca Crespi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Polarity-conditioned memory cell write operations
    Patent number: 10748615
    Abstract: Methods, systems, and devices for polarity-conditioned memory cell write operations are described. A memory cell may be written with a logic state by performing a write operation that includes applying a first write voltage across the memory cell with a first polarity, and applying a second write voltage across the memory cell after applying the first write voltage of the write operation, the second write voltage of the write operation having a second polarity that is different than the first polarity. In some examples, performing a write operation on a memory cell having different voltage polarities across the memory call may allow such a write operation to be completed in a shorter time than a write operation having a voltage of a single polarity.
    Type: Grant
    Filed: May 22, 2019
    Date of Patent: August 18, 2020
    Assignee: Micron Technology, Inc.
    Inventors: Hongmei Wang, Luca Crespi, Debayan Mahalanabis, Fabio Pellizzer
  • POLARITY-CONDITIONED MEMORY CELL WRITE OPERATIONS
    Publication number: 20190311768
    Abstract: Methods, systems, and devices for polarity-conditioned memory cell write operations are described. A memory cell may be written with a logic state by performing a write operation that includes applying a first write voltage across the memory cell with a first polarity, and applying a second write voltage across the memory cell after applying the first write voltage of the write operation, the second write voltage of the write operation having a second polarity that is different than the first polarity. In some examples, performing a write operation on a memory cell having different voltage polarities across the memory call may allow such a write operation to be completed in a shorter time than a write operation having a voltage of a single polarity.
    Type: Application
    Filed: May 22, 2019
    Publication date: October 10, 2019
    Inventors: Hongmei Wang, Luca Crespi, Debayan Mahalanabis, Fabio Pellizzer
  • Polarity-conditioned memory cell write operations
    Patent number: 10354729
    Abstract: Methods, systems, and devices for polarity-conditioned memory cell write operations are described. A memory cell may be written with a logic state by performing a write operation that includes applying a first write voltage across the memory cell with a first polarity, and applying a second write voltage across the memory cell after applying the first write voltage of the write operation, the second write voltage of the write operation having a second polarity that is different than the first polarity. In some examples, performing a write operation on a memory cell having different voltage polarities across the memory call may allow such a write operation to be completed in a shorter time than a write operation having a voltage of a single polarity.
    Type: Grant
    Filed: December 28, 2017
    Date of Patent: July 16, 2019
    Assignee: Micron Technology, Inc.
    Inventors: Hongmei Wang, Luca Crespi, Debayan Mahalanabis, Fabio Pellizzer
  • POLARITY-CONDITIONED MEMORY CELL WRITE OPERATIONS
    Publication number: 20190206489
    Abstract: Methods, systems, and devices for polarity-conditioned memory cell write operations are described. A memory cell may be written with a logic state by performing a write operation that includes applying a first write voltage across the memory cell with a first polarity, and applying a second write voltage across the memory cell after applying the first write voltage of the write operation, the second write voltage of the write operation having a second polarity that is different than the first polarity. In some examples, performing a write operation on a memory cell having different voltage polarities across the memory call may allow such a write operation to be completed in a shorter time than a write operation having a voltage of a single polarity.
    Type: Application
    Filed: December 28, 2017
    Publication date: July 4, 2019
    Inventors: Hongmei Wang, Luca Crespi, Debayan Mahalanabis, Fabio Pellizzer