Abstract: A package for at least two semiconductor devices is provided. The package includes a first die including a first semiconductor device, a second die including a second semiconductor device, a DBC layer, and a third metal layer. The DBC layer includes a first metal layer, a second metal layer, and a ceramic material layer interposed between the first and second metal layers. The first metal layer of the DBC layer and the first die are attached to the third metal layer, and the second die is attached to the second metal layer of the DBC layer. In a preferred embodiment, the second semiconductor device is a MOS device (such as a MOS transistor) and the first semiconductor device is a bipolar device (such as a bipolar transistor).