Patents by Inventor Luca Ferrario

Luca Ferrario has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Vertical devices and methods of forming
    Patent number: 9356095
    Abstract: Vertical devices and methods of forming the same are provided. One example method of forming a vertical device can include forming a trench in a semiconductor structure, and partially filling the trench with an insulator material. A dielectric material is formed over the insulator material. The dielectric material is modified into a modified dielectric material having an etch rate greater than an etch rate of the insulator material. The modified dielectric material is removed from the trench via a wet etch.
    Type: Grant
    Filed: June 24, 2015
    Date of Patent: May 31, 2016
    Assignee: Micron Technology, Inc.
    Inventors: Andrea Filippini, Luca Ferrario, Marcello Mariani
  • VERTICAL DEVICES AND METHODS OF FORMING
    Publication number: 20150295031
    Abstract: Vertical devices and methods of forming the same are provided. One example method of forming a vertical device can include forming a trench in a semiconductor structure, and partially filling the trench with an insulator material. A dielectric material is formed over the insulator material. The dielectric material is modified into a modified dielectric material having an etch rate greater than an etch rate of the insulator material. The modified dielectric material is removed from the trench via a wet etch.
    Type: Application
    Filed: June 24, 2015
    Publication date: October 15, 2015
    Inventors: Andrea Filippini, Luca Ferrario, Marcello Mariani
  • Vertical devices and methods of forming
    Patent number: 9087895
    Abstract: Vertical devices and methods of forming the same are provided. One example method of forming a vertical device can include forming a trench in a semiconductor structure, and partially filling the trench with an insulator material. A dielectric material is formed over the insulator material. The dielectric material is modified into a modified dielectric material having an etch rate greater than an etch rate of the insulator material. The modified dielectric material is removed from the trench via a wet etch.
    Type: Grant
    Filed: September 9, 2013
    Date of Patent: July 21, 2015
    Assignee: Micron Technology, Inc.
    Inventors: Andrea Filippini, Luca Ferrario, Marcello Mariani
  • VERTICAL DEVICES AND METHODS OF FORMING
    Publication number: 20140008721
    Abstract: Vertical devices and methods of forming the same are provided. One example method of forming a vertical device can include forming a trench in a semiconductor structure, and partially filling the trench with an insulator material. A dielectric material is formed over the insulator material. The dielectric material is modified into a modified dielectric material having an etch rate greater than an etch rate of the insulator material. The modified dielectric material is removed from the trench via a wet etch.
    Type: Application
    Filed: September 9, 2013
    Publication date: January 9, 2014
    Applicant: Micron Technology, Inc.
    Inventors: Andrea Filippini, Luca Ferrario, Marcello Mariani
  • Vertical devices and methods of forming
    Patent number: 8530312
    Abstract: Vertical devices and methods of forming the same are provided. One example method of forming a vertical device can include forming a trench in a semiconductor structure, and partially filling the trench with an insulator material. A dielectric material is formed over the insulator material. The dielectric material is modified into a modified dielectric material having an etch rate greater than an etch rate of the insulator material. The modified dielectric material is removed from the trench via a wet etch.
    Type: Grant
    Filed: August 8, 2011
    Date of Patent: September 10, 2013
    Assignee: Micron Technology, Inc.
    Inventors: Andrea Filippini, Luca Ferrario, Marcello Mariani
  • VERTICAL DEVICES AND METHODS OF FORMING
    Publication number: 20130037879
    Abstract: Vertical devices and methods of forming the same are provided. One example method of forming a vertical device can include forming a trench in a semiconductor structure, and partially filling the trench with an insulator material. A dielectric material is formed over the insulator material. The dielectric material is modified into a modified dielectric material having an etch rate greater than an etch rate of the insulator material. The modified dielectric material is removed from the trench via a wet etch.
    Type: Application
    Filed: August 8, 2011
    Publication date: February 14, 2013
    Applicant: Micron Technology, Inc.
    Inventors: Andrea Filippini, Luca Ferrario, Marcello Mariani
  • PLASMA DEPOSITION PROCESS WITH VARIABLE PROCESS PARAMETERS
    Publication number: 20080121518
    Abstract: A process in a plasma reactor for filling a trench formed in a wafer of semiconductor material, said trench having at least one lateral wall and a bottom wall, wherein the process includes depositing a layer of material in the trench, the layer of material having a non-uniform thickness with an overhang on the at least one lateral wall, at a distance from the bottom wall which is a function of a set of operative parameters of the plasma reactor, and repeatedly varying at least one of the operative parameters for varying the distance of the overhang from the bottom wall.
    Type: Application
    Filed: November 26, 2007
    Publication date: May 29, 2008
    Applicant: STMicroelectronics S.R.L.
    Inventor: Luca Ferrario