Abstract: An apparatus and a relative method for measuring straightness errors of elongated-shape elements, such as bars, tubes and the like is presented. The measuring apparatus includes a supporting system for a bar, a first detecting system having one or more first sensors to detect the development of the longitudinal axis of the bar, and a central control unit. The measuring apparatus further includes a second detecting system provided with a plurality of second sensors to detect the forces the bar applies to the supporting system and acquiring means to acquire at least one physical parameter of the bar under measuring. The central control unit includes at least one data acquiring and processing module to acquire and process the data detected by said first and second detecting systems and acquired by said acquiring means, in order to determine the possible straightness error of the bar.

Abstract: The forward firing fragmentation (FFF) munition includes a body, a flight system carried by the body and configured to maneuver the munition in flight, and a warhead carried by the body and including an explosive configured to detonate and expel fragments in a pattern. A near field barrier (near field barrier), such as the guidance system, is carried by the body in front of the warhead and communicatively coupled via a communication link to the flight system. A fragmentation adjustment system is configured to physically displace the near field barrier relative to the warhead while maintaining the communication link between the near field barrier and the flight system until detonation of the explosive.

Abstract: A method of forming an apparatus comprises forming a first metal nitride material over an upper surface of a conductive material within an opening extending through at least one dielectric material through a non-conformal deposition process. A second metal nitride material is formed over an upper surface of the first metal nitride material and side surfaces of the at least one dielectric material partially defining boundaries of the opening through a conformal deposition process. A conductive structure is formed over surfaces of the second metal nitride material within the opening. Apparatuses and electronic systems are also described.

Abstract: A method of forming an apparatus comprises forming a first metal nitride material over an upper surface of a conductive material within an opening extending through at least one dielectric material through a non-conformal deposition process. A second metal nitride material is formed over an upper surface of the first metal nitride material and side surfaces of the at least one dielectric material partially defining boundaries of the opening through a conformal deposition process. A conductive structure is formed over surfaces of the second metal nitride material within the opening. Apparatuses and electronic systems are also described.

Abstract: A method of forming an apparatus comprises forming a first metal nitride material over an upper surface of a conductive material within an opening extending through at least one dielectric material through a non-conformal deposition process. A second metal nitride material is formed over an upper surface of the first metal nitride material and side surfaces of the at least one dielectric material partially defining boundaries of the opening through a conformal deposition process. A conductive structure is formed over surfaces of the second metal nitride material within the opening. Apparatuses and electronic systems are also described.

Abstract: Some embodiments include an apparatus having a structure with a surface which comprises tungsten. The apparatus has titanium-nitride-containing protective material along and directly against the surface. The structure may be a digit line of a memory array. Some embodiments include a method in which an assembly is formed to have a tungsten-containing layer with an exposed tungsten-containing upper surface. Titanium-nitride-containing protective material is formed over and directly against the tungsten-containing upper surface. Additional material is formed over the protective material, and is spaced from the tungsten-containing upper surface by the protective material. The additional material may comprise silicon nitride and/or silicon dioxide.

Abstract: Phase change memory cells, structures, and devices having a phase change material and an electrode forming an ohmic contact therewith which includes carbon and tungsten doped with nitrogen are disclosed and described. Such electrodes have a low contact resistance with the phase change material and a high thermal stability from room temperature to temperatures needed for programming operations.

Abstract: Phase change memory cells, structures, and devices having a phase change material and an electrode forming an ohmic contact therewith which includes carbon and tungsten doped with nitrogen are disclosed and described. Such electrodes have a low contact resistance with the phase change material and a high thermal stability from room temperature to temperatures needed for programming operations.

Abstract: A phase change memory cell comprising a first chalcogenide compound on a first electrode, a first nitrogenated carbon material directly on the first chalcogenide compound, a second chalcogenide compound directly on the first nitrogenated carbon material, and a second nitrogenated carbon material directly on the second chalcogenide compound and directly on a second electrode. Other phase change memory cells are described. A method of forming a phase change memory cell and a phase change memory device are also described.

Abstract: Phase change memory cells, structures, and devices having a phase change material and an electrode forming an ohmic contact therewith which includes carbon and tungsten doped with nitrogen are disclosed and described. Such electrodes have a low contact resistance with the phase change material and a high thermal stability from room temperature to temperatures needed for programming operations.

Abstract: A phase change memory cell comprising a first chalcogenide compound on a first electrode, a first nitrogenated carbon material directly on the first chalcogenide compound, a second chalcogenide compound directly on the first nitrogenated carbon material, and a second nitrogenated carbon material directly on the second chalcogenide compound and directly on a second electrode. Other phase change memory cells are described. A method of forming a phase change memory cell and a phase change memory device are also described.

Abstract: A phase change memory cell comprising a first chalcogenide compound on a first electrode, a first nitrogenated carbon material directly on the first chalcogenide compound, a second chalcogenide compound directly on the first nitrogenated carbon material, and a second nitrogenated carbon material directly on the second chalcogenide compound and directly on a second electrode. Other phase change memory cells are described. A method of forming a phase change memory cell and a phase change memory device are also described.

Abstract: Memory cells and memory cell structures having a number of phase change material gradients, devices utilizing the same, and methods of forming the same are disclosed herein. One example of forming a memory cell includes forming a first electrode material, forming a phase change material gradient on the first electrode material, and forming a second electrode material on the phase change material gradient.

Abstract: A temperature-sensitive label is described. The temperature-sensitive label has a temperature-sensitive system having a filiform shape memory member that has a first end portion having a terminal part fixedly secured to a first contact member, a second end portion having a terminal part restrained by a second contact member in a non-permanent way, and a central curved portion. The central curved portion is in the martensitic phase while the first and second portions are in the austenitic phase at a same environmental temperature above a critical threshold temperature to be monitored by the label such that in case of exposure to a temperature lower than the preset critical threshold temperature the end portions of the filiform shape member perform a phase transition, from austenitic phase to martensitic phase, which causes its irreversible disengagement from the restraint formed by the second contact member.

Abstract: A temperature-sensitive label is described. The temperature-sensitive label has a temperature-sensitive system having a filiform shape memory member that has a first end portion having a terminal part fixedly secured to a first contact member, a second end portion having a terminal part restrained by a second contact member in a non-permanent way, and a central curved portion. The central curved portion is in the martensitic phase while the first and second portions are in the austenitic phase at a same environmental temperature above a critical threshold temperature to be monitored by the label such that in case of exposure to a temperature lower than the preset critical threshold temperature the end portions of the filiform shape member perform a phase transition, from austenitic phase to martensitic phase, which causes its irreversible disengagement from the restraint formed by the second contact member.

Abstract: Some embodiments include memory cells which contain chalcogenide material having germanium in combination with one or both of antimony and tellurium. An atomic percentage of the germanium within the chalcogenide material is greater than 50%; and may be, for example, within a range of from greater than or equal to about 52% to less than or equal to about 78%. In some embodiments, the memory cell has a top electrode over the chalcogenide material, a heater element under and directly against the chalcogenide material, and a bottom electrode beneath the heater element. The heater element may be L-shaped, with the L-shape having a vertical pillar region joining with a horizontal leg region. A bottom surface of the horizontal leg region may be directly against the bottom electrode, and a top surface of the vertical pillar region may be directly against the chalcogenide material.

Abstract: Memory cells and memory cell structures having a number of phase change material gradients, devices utilizing the same, and methods of forming the same are disclosed herein. One example of forming a memory cell includes forming a first electrode material, forming a phase change material gradient on the first electrode material, and forming a second electrode material on the phase change material gradient.

Abstract: Some embodiments include memory cells which contain chalcogenide material having germanium in combination with one or both of antimony and tellurium. An atomic percentage of the germanium within the chalcogenide material is greater than 50%; and may be, for example, within a range of from greater than or equal to about 52% to less than or equal to about 78%. In some embodiments, the memory cell has a top electrode over the chalcogenide material, a heater element under and directly against the chalcogenide material, and a bottom electrode beneath the heater element. The heater element may be L-shaped, with the L-shape having a vertical pillar region joining with a horizontal leg region. A bottom surface of the horizontal leg region may be directly against the bottom electrode, and a top surface of the vertical pillar region may be directly against the chalcogenide material.

Abstract: A phase change memory cell comprising a first chalcogenide compound on a first electrode, a first nitrogenated carbon material directly on the first chalcogenide compound, a second chalcogenide compound directly on the first nitrogenated carbon material, and a second nitrogenated carbon material directly on the second chalcogenide compound and directly on a second electrode. Other phase change memory cells are described. A method of forming a phase change memory cell and a phase change memory device are also described.

Abstract: An impact resistant tool or tool bit holder has an active end for driving a fastener and a shanking end for securing to a power tool. The active end includes a body with a bore to receive the shank and a pocket to receive a damping mechanism. The shank includes an end to engage the bore in the body, and a pocket to receive the damping mechanism. The shank is received in the bore in the body for limited rotation with respect to the body. A damping mechanism is positioned in the pockets to provide damping between the body and the shank during torque loading.