Abstract: A resistive random-access memory (ReRAM) device may include a thermally engineered layer that is positioned adjacent to an active layer and configured to act as a heat sink during filament formation in response to applied voltages. The thermally engineered layer may act as one of the electrodes on the ReRAM device and may be adjacent to any side of the active layer. The active layer may also include a plurality of individual active layers. Each of the active layers may be associated with a different dielectric constant, such that the middle active layer has a dielectric constant that is significantly higher than the other two surrounding active layers.

Abstract: A simulation of an electronic device may use a distribution of atomistic defects to provide more accurate results. An input mesh may be received representing a physical structure of the electronic device. This input mesh may be transformed into a polyhedral mesh to facilitate the simulation. A distribution of defects may then be generated and distributed throughout the polyhedral mesh. When performing each time step of the simulation, the effects of these defects may be attributed to individual cells in the polyhedral mesh and incorporated into the simulation equations for each volume. For example, charge and power contributions from the defects may be incorporated into the simulation equations to more accurately model the performance of the device.

Abstract: It is disclosed an amplifier for driving a capacitive load, comprising an input terminal adapted to receive an input voltage signal, an output terminal adapted to drive the capacitive load, a linear amplification stage, switching amplification stage, a capacitor, a first switch and a measurement and control circuit. The measurement and control circuit is configured to: measure the value of the current generated at the output from the linear amplification stage and generate a driving voltage signal of the switching amplification stage; generate the first switching signal to open the first switch and generate an enabling signal to enable the operation of at least part of the switching amplification stage; generate the first switching signal to close the first switch and generate the enabling signal to disable the operation of the switching amplification stage; generate the first switching signal to open the first switch.

Abstract: A resistive random-access memory (ReRAM) device may include a thermally engineered layer that is positioned adjacent to an active layer and configured to act as a heat sink during filament formation in response to applied voltages. The thermally engineered layer may act as one of the electrodes on the ReRAM device and may be adjacent to any side of the active layer. The active layer may also include a plurality of individual active layers. Each of the active layers may be associated with a different dielectric constant, such that the middle active layer has a dielectric constant that is significantly higher than the other two surrounding active layers.

Abstract: A manufacturing process of a rear window for vehicles including the following steps: provision of a glass plate with an external side suitable for being directed towards the exterior of the vehicle and an internal side suitable for being directed towards the interior of the vehicle; application of a heater on the internal side of the glass plate, the heater having two bus bars that are electrically connected to a positive pole and to a negative pole of a battery of the vehicle, respectively, and a plurality of horizontal heating lines that connect the bus bars; and application of antenna traces on the internal side of the glass plate, wherein the antenna traces have strips of transparent nanowires made of conductive material. The application of the antenna traces is made by spray-coating on the internal side of the glass plate.

Abstract: A resistive random-access memory (ReRAM) device may include a thermally engineered layer that is positioned adjacent to an active layer and configured to act as a heat sink during filament formation in response to applied voltages. The thermally engineered layer may act as one of the electrodes on the ReRAM device and may be adjacent to any side of the active layer. The active layer may also include a plurality of individual active layers. Each of the active layers may be associated with a different dielectric constant, such that the middle active layer has a dielectric constant that is significantly higher than the other two surrounding active layers.

Abstract: A manufacturing process of a rear window for vehicles including the following steps: provision of a glass plate with an external side suitable for being directed towards the exterior of the vehicle and an internal side suitable for being directed towards the interior of the vehicle; application of a heater on the internal side of the glass plate, the heater having two bus bars that are electrically connected to a positive pole and to a negative pole of a battery of the vehicle, respectively, and a plurality of horizontal heating lines that connect the bus bars; and application of antenna traces on the internal side of the glass plate, wherein the antenna traces have strips of transparent nanowires made of conductive material. The application of the antenna traces is made by spray-coating on the internal side of the glass plate.

Abstract: A selector device for a memory cell in a memory array includes a first electrode, a second electrode, and a separator between the first electrode and the second electrode. The separator includes a mixed ionic-electronic conduction material with first ions having a first charge such that the first ions respond to a voltage applied between the first electrode and the second electrode by moving away from the first electrode. The separator is doped near the second electrode with second ions having a second charge that opposes the first charge.

Abstract: A resistive random-access memory (ReRAM) device may include a thermally engineered layer that is positioned adjacent to an active layer and configured to act as a heat sink during filament formation in response to applied voltages. The thermally engineered layer may act as one of the electrodes on the ReRAM device and may be adjacent to any side of the active layer. The active layer may also include a plurality of individual active layers. Each of the active layers may be associated with a different dielectric constant, such that the middle active layer has a dielectric constant that is significantly higher than the other two surrounding active layers.

Abstract: It is disclosed an amplifier for driving a capacitive load, comprising an input terminal adapted to receive an input voltage signal, an output terminal adapted to drive the capacitive load, a linear amplification stage, switching amplification stage, a capacitor, a first switch and a measurement and control circuit. The measurement and control circuit is configured to: measure the value of the current generated at the output from the linear amplification stage and generate a driving voltage signal of the switching amplification stage; generate the first switching signal to open the first switch and generate an enabling signal to enable the operation of at least part of the switching amplification stage; generate the first switching signal to close the first switch and generate the enabling signal to disable the operation of the switching amplification stage; generate the first switching signal to open the first switch.

Abstract: A manufacturing method of a microphone is disclosed, wherein a patterned upper electrode is obtained by a first deposition of conductive material in such a way to form pads of the patterned electrode, and pillars are formed by of successive depositions of rigid conductive material, in aligned position on the pads of the patterned electrode. The first deposition and the successive depositions are made by screen-printing, dispenser-printing or spray-coating of material in liquid or semifluid state.

Abstract: A distributed active transformer includes an input transformer set and an output transformer set. Active stages are coupled between a transformer in the input transformer set and a transformer in the output transformer set. The input and output transformer sets are each configured as a slab transformer. The input slab transformer includes a single primary slab and many secondary slabs. The output slab transformer includes many primary slabs and a single secondary slab.

Abstract: A distributed active transformer includes an input transformer set and an output transformer set. Active stages are coupled between a transformer in the input transformer set and a transformer in the output transformer set. The input and output transformer sets are each configured as a slab transformer. The input slab transformer includes a single primary slab and many secondary slabs. The output slab transformer includes many primary slabs and a single secondary slab.