Abstract: The present invention relates to a tilt correction method and a corresponding apparatus for correcting tilt of RF signals in a wanted channel having a predetermined frequency range, in a signal path of a communication equipment, wherein the RF signals are down-converted to an intermediate frequency of an IF domain. The method comprises the steps of: providing a predetermined RF signal having a particular frequency to the signal path, detecting an output signal in the intermediate frequency (IF) domain and outputting a detection result, repeating the providing step and the detecting step for plural RF signals of different frequencies within the channel frequency range, determining the tilt of the RF signals in the frequency range by comparing the detection results, and correcting the tilt to obtain a minimized tilt of the wanted channel depending upon the determined tilt.

Abstract: The present invention relates to a tilt correction method and a corresponding apparatus for correcting tilt of RF signals in a wanted channel having a predetermined frequency range, in a signal path of a communication equipment, wherein the RF signals are down-converted to an intermediate frequency of an IF domain. The method comprises the steps of: providing a predetermined RF signal having a particular frequency to the signal path, detecting an output signal in the intermediate frequency (IF) domain and outputting a detection result, repeating the providing step and the detecting step for plural RF signals of different frequencies within the channel frequency range, determining the tilt of the RF signals in the frequency range by comparing the detection results, and correcting the tilt to obtain a minimized tilt of the wanted channel depending upon the determined tilt.

Abstract: A CMOS temperature sensor includes a first circuit portion for generating a voltage signal whose value increases with the temperature to be sensed, and a second circuit portion for generating an electric voltage signal whose value decreases with the temperature to be sensed. A comparator is provided as an output stage for comparing the values of both voltage signals. The generator element of the second circuit portion is a vertical bipolar transistor connected in a diode configuration.

Abstract: A CMOS technology voltage booster having plurality of charge-pump stages cascade connected together and driven by a plurality of phases, each stage having a terminating input node and a terminating output node, with at least one transistor connected therebetween that has its control terminal connected to an internal circuit node of the same stage and applied one of the phases. This voltage booster further includes a pair of additional circuit elements for transferring, onto the internal node, a potential exceeding the voltage at the input node by at least one threshold. A first of the additional elements is essentially a MOS transistor having its control terminal connected to the control terminal of that transistor that is connected between the input and the output of the stage, while the second additional element is an auxiliary capacitor having one end connected directly to the first additional element and connected to the internal node through a transistor.

Abstract: A CMOS technology voltage booster having plurality of charge-pump stages cascade connected together and driven by a plurality of phases, each stage having a terminating input node and a terminating output node, with at least one transistor connected therebetween that has its control terminal connected to an internal circuit node of the same stage and applied one of the phases. This voltage booster further includes a pair of additional circuit elements for transferring, onto the internal node, a potential exceeding the voltage at the input node by at least one threshold. A first of the additional elements is essentially a MOS transistor having its control terminal connected to the control terminal of that transistor that is connected between the input and the output of the stage, while the second additional element is an auxiliary capacitor having one end connected directly to the first additional element and connected to the internal node through a transistor.