Patents by Inventor Luca SEGHIZZI
Luca SEGHIZZI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240130240Abstract: A MEMS device is provided that includes a semiconductor substrate including a main surface extending perpendicular to a first direction and a side surface extending on a plane parallel to the first direction and to a second direction that is perpendicular to the first direction. At least one cantilevered member protrudes from the side surface of the semiconductor substrate along a third direction that is perpendicular to the first and second directions. The at least one cantilevered member includes a body portion that includes a piezoelectric material. The body portion has a length along the third direction, a height along the first direction and a width along the second direction, and the height is greater than the width. The at least one cantilevered member is configured to vibrate by lateral bending along a direction perpendicular to the first direction.Type: ApplicationFiled: December 11, 2023Publication date: April 18, 2024Applicant: STMICROELECTRONICS S.r.l.Inventors: Gianluca LONGONI, Luca SEGHIZZI
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Publication number: 20240065106Abstract: A transducer includes a supporting body and a suspended structure mechanically coupled to the supporting body. The suspended structure has a first and a second surface opposite to one another along an axis, and is configured to oscillate in an oscillation direction having at least one component parallel to the axis. A first piezoelectric transducer is disposed on the first surface of the suspended structure, and a second piezoelectric transducer is disposed on the second surface of the suspended structure.Type: ApplicationFiled: October 31, 2023Publication date: February 22, 2024Applicant: STMICROELECTRONICS S.r.l.Inventors: Luca SEGHIZZI, Federico VERCESI, Claudia PEDRINI
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Publication number: 20240043263Abstract: A method for manufacturing an optical microelectromechanical device, includes forming, in a first wafer of semiconductor material having a first surface and a second surface, a suspended mirror structure, a fixed structure surrounding the suspended mirror structure, elastic supporting elements extending between the fixed structure and the suspended mirror structure, and an actuation structure coupled to the suspended mirror structure. The method continues with forming, in a second wafer, a chamber delimited by a bottom wall having a through opening, and bonding the second wafer to the first surface of the first wafer and bonding a third wafer to the second surface of the first wafer so that the chamber overlies the actuation structure, and the through opening is aligned to the suspended mirror structure, thus forming a device composite wafer. The device composite wafer is diced to form an optical microelectromechanical device.Type: ApplicationFiled: September 11, 2023Publication date: February 8, 2024Applicant: STMicroelectronics S.r.l.Inventors: Luca SEGHIZZI, Nicolo' BONI, Laura OGGIONI, Roberto CARMINATI, Marta CARMINATI
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Patent number: 11889765Abstract: A MEMS device is provided that includes a semiconductor substrate including a main surface extending perpendicular to a first direction and a side surface extending on a plane parallel to the first direction and to a second direction that is perpendicular to the first direction. At least one cantilevered member protrudes from the side surface of the semiconductor substrate along a third direction that is perpendicular to the first and second directions. The at least one cantilevered member includes a body portion that includes a piezoelectric material. The body portion has a length along the third direction, a height along the first direction and a width along the second direction, and the height is greater than the width. The at least one cantilevered member is configured to vibrate by lateral bending along a direction perpendicular to the first direction.Type: GrantFiled: February 22, 2021Date of Patent: January 30, 2024Assignee: STMICROELECTRONICS S.r.l.Inventors: Gianluca Longoni, Luca Seghizzi
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Publication number: 20240014718Abstract: A stator for an electric actuator or motor, including: a solid body; a ferromagnetic core region between the layers of semiconductor material, electrically insulated from the layers of semiconductor material; a plurality of conductive through vias through the solid body; a first plurality of conductive strips, which extend parallel to one another above the core; and a second plurality of conductive strips, which extend parallel to one another above the core and opposite to the first plurality of conductive strips; wherein the first plurality of conductive strips, the plurality of conductive through vias, and the second plurality of conductive strips form a winding or coil of the stator.Type: ApplicationFiled: June 30, 2023Publication date: January 11, 2024Applicant: STMICROELECTRONICS S.r.l.Inventors: Luca SEGHIZZI, Federico VERCESI, Gianluca LONGONI
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Patent number: 11871668Abstract: A thermoelectric generator includes a substrate and one or more thermoelectric elements on the substrate and each configured to convert a thermal drop across the thermoelectric elements into an electric potential by Seebeck effect. The thermoelectric generator includes a cavity between the substrate and the thermoelectric elements. The thermoelectric generator includes, within the cavity, a support structure for supporting the thermoelectric elements. The support structure has a thermal conductivity lower than a thermal conductivity of the substrate.Type: GrantFiled: January 26, 2021Date of Patent: January 9, 2024Assignee: STMICROELECTRONICS S.r.l.Inventors: Paolo Ferrari, Flavio Francesco Villa, Luca Zanotti, Andrea Nomellini, Luca Seghizzi
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Patent number: 11839159Abstract: A transducer includes a supporting body and a suspended structure mechanically coupled to the supporting body. The suspended structure has a first and a second surface opposite to one another along an axis, and is configured to oscillate in an oscillation direction having at least one component parallel to the axis. A first piezoelectric transducer is disposed on the first surface of the suspended structure, and a second piezoelectric transducer is disposed on the second surface of the suspended structure.Type: GrantFiled: October 14, 2020Date of Patent: December 5, 2023Assignee: STMICROELECTRONICS S.r.l.Inventors: Luca Seghizzi, Federico Vercesi, Claudia Pedrini
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Patent number: 11787685Abstract: For manufacturing an optical microelectromechanical device, a first wafer of semiconductor material having a first surface and a second surface is machined to form a suspended mirror structure, a fixed structure surrounding the suspended mirror structure, elastic supporting elements which extend between the fixed structure and the suspended mirror structure, and an actuation structure coupled to the suspended mirror structure. A second wafer is machined separately to form a chamber delimited by a bottom wall having a through opening. The second wafer is bonded to the first surface of the first wafer in such a way that the chamber overlies the actuation structure and the through opening is aligned to the suspended mirror structure. Furthermore, a third wafer is bonded to the second surface of the first wafer to form a composite wafer device. The composite wafer device is then diced to form an optical microelectromechanical device.Type: GrantFiled: December 18, 2020Date of Patent: October 17, 2023Assignee: STMicroelectronics S.r.l.Inventors: Luca Seghizzi, Nicolo′ Boni, Laura Oggioni, Roberto Carminati, Marta Carminati
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Publication number: 20230301191Abstract: A method of fabricating a thermoelectric converter that includes providing a layer of a Silicon-based material having a first surface and a second surface, opposite to and separated from the first surface by a Silicon-based material layer thickness; forming a plurality of first thermoelectrically active elements of a first thermoelectric semiconductor material having a first Seebeck coefficient, and forming a plurality of second thermoelectrically active elements of a second thermoelectric semiconductor material having a second Seebeck coefficient, wherein the first and second thermoelectrically active elements are formed to extend through the Silicon-based material layer thickness, from the first surface to the second surface; forming electrically conductive interconnections in correspondence of the first surface and of the second surface of the layer of Silicon-based material, for electrically interconnecting the plurality of first thermoelectrically active elements and the plurality of second thermoelectriType: ApplicationFiled: May 24, 2023Publication date: September 21, 2023Applicant: STMICROELECTRONICS S.r.l.Inventors: Paolo FERRARI, Flavio Francesco VILLA, Lucia ZULLINO, Andrea NOMELLINI, Luca SEGHIZZI, Luca ZANOTTI, Bruno MURARI, Martina SCOLARI
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Patent number: 11696504Abstract: A method of fabricating a thermoelectric converter that includes providing a layer of a Silicon-based material having a first surface and a second surface, opposite to and separated from the first surface by a Silicon-based material layer thickness; forming a plurality of first thermoelectrically active elements of a first thermoelectric semiconductor material having a first Seebeck coefficient, and forming a plurality of second thermoelectrically active elements of a second thermoelectric semiconductor material having a second Seebeck coefficient, wherein the first and second thermoelectrically active elements are formed to extend through the Silicon-based material layer thickness, from the first surface to the second surface; forming electrically conductive interconnections in correspondence of the first surface and of the second surface of the layer of Silicon-based material, for electrically interconnecting the plurality of first thermoelectrically active elements and the plurality of second thermoelectriType: GrantFiled: May 14, 2021Date of Patent: July 4, 2023Assignee: STMICROELECTRONICS S.r.l.Inventors: Paolo Ferrari, Flavio Francesco Villa, Lucia Zullino, Andrea Nomellini, Luca Seghizzi, Luca Zanotti, Bruno Murari, Martina Scolari
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Publication number: 20230110175Abstract: Process for manufacturing a microfluidic device, wherein a sacrificial layer is formed on a semiconductor substrate; a carrying layer is formed on the sacrificial layer; the carrying layer is selectively removed to form at least one release opening extending through the carrying layer; a permeable layer of a permeable semiconductor material is formed in the at least one release opening; the sacrificial layer is selectively removed through the permeable layer to form a fluidic chamber; the at least one release opening is filled with non-permeable semiconductor filling material, forming a monolithic body having a membrane region; an actuator element is formed on the membrane region and a cap element is attached to the monolithic body and surrounds the actuator element.Type: ApplicationFiled: September 19, 2022Publication date: April 13, 2023Applicant: STMICROELECTRONICS S.r.l.Inventors: Andrea NOMELLINI, Luca SEGHIZZI
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Publication number: 20230107094Abstract: The present disclosure is directed to a process for manufacturing a micro-electro-mechanical system (MEMS) device. The process includes, in part, forming a first sacrificial dielectric region on a semiconductor wafer; forming a structural layer of semiconductor material on the first sacrificial dielectric region; forming a plurality of first openings through the structural layer; forming a second sacrificial dielectric region on the structural layer; forming a ceiling layer of semiconductor material on the second sacrificial dielectric region; forming a plurality of second openings through the ceiling layer; forming on the ceiling layer a permeable layer; selectively removing the first and the second sacrificial dielectric regions; and forming on the permeable layer a sealing layer of semiconductor material.Type: ApplicationFiled: September 19, 2022Publication date: April 6, 2023Applicant: STMICROELECTRONICS S.R.L.Inventors: Gianluca LONGONI, Luca SEGHIZZI, Andrea NOMELLINI
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Patent number: 11600765Abstract: The MEMS actuator is formed by a substrate, which surrounds a cavity; by a deformable structure suspended on the cavity; by an actuation structure formed by a first piezoelectric region of a first piezoelectric material, supported by the deformable structure and configured to cause a deformation of the deformable structure; and by a detection structure formed by a second piezoelectric region of a second piezoelectric material, supported by the deformable structure and configured to detect the deformation of the deformable structure.Type: GrantFiled: December 29, 2020Date of Patent: March 7, 2023Assignee: STMICROELECTRONICS S.r.l.Inventors: Domenico Giusti, Carlo Luigi Prelini, Marco Ferrera, Carla Maria Lazzari, Luca Seghizzi, Nicolo′ Boni, Roberto Carminati, Fabio Quaglia
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Publication number: 20220380203Abstract: A process for manufacturing a combined microelectromechanical device includes forming, in a die of semiconductor material, at least a first and a second microelectromechanical structure, performing a first bonding phase to bond a cap to the die via a bonding region or adhesive to define at least a first and a second cavity at the first and, respectively, second microelectromechanical structures, the cavities being at a controlled pressure, forming an access channel through the cap in fluidic communication with the first cavity to control the pressure value inside the first cavity in a distinct manner with respect to a respective pressure value inside the second cavity, and performing a second bonding phase, after which the bonding region deforms to hermetically close the first cavity with respect to the access channel.Type: ApplicationFiled: May 13, 2022Publication date: December 1, 2022Applicant: STMICROELECTRONICS S.r.l.Inventors: Federico VERCESI, Luca SEGHIZZI, Laura OGGIONI, Lorenzo CORSO
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Publication number: 20220165892Abstract: Disclosed herein is an integrated component formed by a first wafer having first and second trenches defined in a top surface thereof, and a second wafer coupled to the first wafer and formed by a substrate with a structural layer thereon that integrated an electromagnetic radiation detector overlying the second trench. A first cap is coupled to the second wafer, overlies the electromagnetic radiation detector, and serves to define a first air-tight chamber in which the electromagnetic radiation detector is positioned. A stator, a rotor, and a mobile mass are integrated within the substrate and form a drive assembly for driving the mobile mass. The rotor overlies the first trench. A second cap is coupled to the second wafer, overlies the mobile mass, and serving to define a second air-tight chamber in which the mobile mass is positioned.Type: ApplicationFiled: February 10, 2022Publication date: May 26, 2022Applicant: STMicroelectronics S.r.l.Inventors: Luca SEGHIZZI, Linda MONTAGNA, Giuseppe VISALLI, Mikel AZPEITIA URQUIA
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Patent number: 11276789Abstract: A first wafer of semiconductor material has a surface. A second wafer of semiconductor material includes a substrate and a structural layer on the substrate. The structural layer integrates a detector device for detecting electromagnetic radiation. The structural layer of the second wafer is coupled to the surface of the first wafer. The substrate of the second wafer is shaped to form a stator, a rotor, and a mobile mass of a micromirror. The stator and the rotor form an assembly for capacitively driving the mobile mass.Type: GrantFiled: January 16, 2020Date of Patent: March 15, 2022Assignee: STMicroelectronics S.r.l.Inventors: Luca Seghizzi, Linda Montagna, Giuseppe Visalli, Mikel Azpeitia Urquia
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Publication number: 20210359189Abstract: A method of fabricating a thermoelectric converter that includes providing a layer of a Silicon-based material having a first surface and a second surface, opposite to and separated from the first surface by a Silicon-based material layer thickness; forming a plurality of first thermoelectrically active elements of a first thermoelectric semiconductor material having a first Seebeck coefficient, and forming a plurality of second thermoelectrically active elements of a second thermoelectric semiconductor material having a second Seebeck coefficient, wherein the first and second thermoelectrically active elements are formed to extend through the Silicon-based material layer thickness, from the first surface to the second surface; forming electrically conductive interconnections in correspondence of the first surface and of the second surface of the layer of Silicon-based material, for electrically interconnecting the plurality of first thermoelectrically active elements and the plurality of second thermoelectriType: ApplicationFiled: May 14, 2021Publication date: November 18, 2021Applicant: STMICROELECTRONICS S.r.l.Inventors: Paolo FERRARI, Flavio Francesco VILLA, Lucia ZULLINO, Andrea NOMELLINI, Luca SEGHIZZI, Luca ZANOTTI, Bruno MURARI, Martina SCOLARI
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Publication number: 20210351338Abstract: The MEMS actuator is formed by a substrate, which surrounds a cavity; by a deformable structure suspended on the cavity; by an actuation structure formed by a first piezoelectric region of a first piezoelectric material, supported by the deformable structure and configured to cause a deformation of the deformable structure; and by a detection structure formed by a second piezoelectric region of a second piezoelectric material, supported by the deformable structure and configured to detect the deformation of the deformable structure.Type: ApplicationFiled: December 29, 2020Publication date: November 11, 2021Applicant: STMICROELECTRONICS S.r.l.Inventors: Domenico GIUSTI, Carlo Luigi PRELINI, Marco FERRERA, Carla Maria LAZZARI, Luca SEGHIZZI, Nicolo' BONI, Roberto CARMINATI, Fabio QUAGLIA
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Publication number: 20210265556Abstract: A MEMS device is provided that includes a semiconductor substrate including a main surface extending perpendicular to a first direction and a side surface extending on a plane parallel to the first direction and to a second direction that is perpendicular to the first direction. At least one cantilevered member protrudes from the side surface of the semiconductor substrate along a third direction that is perpendicular to the first and second directions. The at least one cantilevered member includes a body portion that includes a piezoelectric material. The body portion has a length along the third direction, a height along the first direction and a width along the second direction, and the height is greater than the width. The at least one cantilevered member is configured to vibrate by lateral bending along a direction perpendicular to the first direction.Type: ApplicationFiled: February 22, 2021Publication date: August 26, 2021Applicant: STMicroelectronics S.r.l.Inventors: Gianluca LONGONI, Luca SEGHIZZI
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Publication number: 20210242387Abstract: A thermoelectric generator includes a substrate and one or more thermoelectric elements on the substrate and each configured to convert a thermal drop across the thermoelectric elements into an electric potential by Seebeck effect. The thermoelectric generator includes a cavity between the substrate and the thermoelectric elements. The thermoelectric generator includes, within the cavity, a support structure for supporting the thermoelectric elements. The support structure has a thermal conductivity lower than a thermal conductivity of the substrate.Type: ApplicationFiled: January 26, 2021Publication date: August 5, 2021Applicant: STMICROELECTRONICS S.R.L.Inventors: Paolo FERRARI, Flavio Francesco VILLA, Luca ZANOTTI, Andrea NOMELLINI, Luca SEGHIZZI