Abstract: A microelectronic device comprises an access device comprising a source region and a drain region spaced from the source region, an insulative material vertically adjacent to the access device, and a capacitor within the insulative material and in electrical communication with the access device. The capacitor comprises a material comprising silicon oxynitride or titanium silicon nitride over surfaces of the insulative material, a first electrode comprising titanium nitride on the material, a dielectric material over the first electrode, and a second electrode on the dielectric material. Related methods of forming the microelectronic device and an electronic system including the microelectronic devices are also described.

Abstract: Some embodiments include an apparatus having a structure with a surface which comprises tungsten. The apparatus has titanium-nitride-containing protective material along and directly against the surface. The structure may be a digit line of a memory array. Some embodiments include a method in which an assembly is formed to have a tungsten-containing layer with an exposed tungsten-containing upper surface. Titanium-nitride-containing protective material is formed over and directly against the tungsten-containing upper surface. Additional material is formed over the protective material, and is spaced from the tungsten-containing upper surface by the protective material. The additional material may comprise silicon nitride and/or silicon dioxide.

Abstract: Methods, apparatuses, and systems related to conductive structures are described. An example conductive structure includes a first conductive material including a conductive metal nitride, where the first conductive material has a thickness of at least 0.5 nanometers, and a second conductive material including a conductive metal, where the second conductive material is disposed on a first surface of the first conductive material.

Abstract: Some embodiments include an integrated assembly having first and second source/drain regions laterally offset from one another. Metal silicide is adjacent to lateral surfaces of the source/drain regions. Metal is adjacent to the metal silicide. Container-shaped first and second capacitor electrodes are coupled to the source/drain regions through the metal silicide and the metal. Capacitor dielectric material lines interior surfaces of the container-shaped first and second capacitor electrodes, A shared capacitor electrode extends vertically between the first and second capacitor electrodes, and extends into the lined first and second capacitor electrodes. Some embodiments include methods of forming integrated assemblies.

Abstract: A method of forming a microelectronic device comprises forming interlayer dielectric material over a base structure comprising semiconductive structures separated from one another by insulative structures. Sacrificial line structures separated from one another by trenches are formed over the interlayer dielectric material. The sacrificial line structures horizontally overlap some of the semiconductive structures, and the trenches horizontally overlap some other of the semiconductive structures. Plug structures are formed within horizontal areas of the trenches and extend through the interlayer dielectric material and into the some other of the semiconductive structures. The sacrificial line structures are replaced with additional trenches. Conductive contact structures are formed within horizontal areas of the additional trenches and extend through the interlayer dielectric material and into the some of the semiconductive structures.

Abstract: Techniques for semiconductor devices including amorphous silicon are disclosed. In the illustrative embodiment, trenches are etched through several layers of a memory during manufacture, including through a phase-change layer. To protect the phase-change layer during further processing steps, amorphous silicon is applied to the phase-change layer using low-temperature chemical vapor deposition, which can be done without exceeding the melting point of the phase-change layer. The amorphous silicon can be oxidized, forming a protective silicon oxide layer around the phase-change layer.

Abstract: Some embodiments include an integrated assembly having first and second source/drain regions laterally offset from one another. Metal silicide is adjacent to lateral surfaces of the source/drain regions. Metal is adjacent to the metal silicide. Container-shaped first and second capacitor electrodes are coupled to the source/drain regions through the metal silicide and the metal. Capacitor dielectric material lines interior surfaces of the container-shaped first and second capacitor electrodes, A shared capacitor electrode extends vertically between the first and second capacitor electrodes, and extends into the lined first and second capacitor electrodes. Some embodiments include methods of forming integrated assemblies.

Abstract: A microelectronic device includes a first conductive structure, a barrier structure, a conductive liner structure, and a second conductive structure. The first conductive structure is within a first filled opening in a first dielectric structure. The barrier structure is within the first filled opening in the first dielectric structure and vertically overlies the first conductive structure. The conductive liner structure is on the barrier structure and is within a second filled opening in a second dielectric structure vertically overlying the first dielectric structure. The second conductive structure vertically overlies and is horizontally surrounded by the conductive liner structure within the second filled opening in the second dielectric structure. Memory devices, electronic systems, and methods of forming microelectronic devices are also described.

Abstract: A microelectronic device includes a first conductive structure, a barrier structure, a conductive liner structure, and a second conductive structure. The first conductive structure is within a first filled opening in a first dielectric structure. The barrier structure is within the first filled opening in the first dielectric structure and vertically overlies the first conductive structure. The conductive liner structure is on the barrier structure and is within a second filled opening in a second dielectric structure vertically overlying the first dielectric structure. The second conductive structure vertically overlies and is horizontally surrounded by the conductive liner structure within the second filled opening in the second dielectric structure. Memory devices, electronic systems, and methods of forming microelectronic devices are also described.

Abstract: An apparatus and a relative method for measuring straightness errors of elongated-shape elements, such as bars, tubes and the like is presented. The measuring apparatus includes a supporting system for a bar, a first detecting system having one or more first sensors to detect the development of the longitudinal axis of the bar, and a central control unit. The measuring apparatus further includes a second detecting system provided with a plurality of second sensors to detect the forces the bar applies to the supporting system and acquiring means to acquire at least one physical parameter of the bar under measuring. The central control unit includes at least one data acquiring and processing module to acquire and process the data detected by said first and second detecting systems and acquired by said acquiring means, in order to determine the possible straightness error of the bar.

Abstract: The present invention relates to linear actuators comprising an electrically-controlled shape memory alloy coil spring (23) suitable to provide linear displacements in valves, switches, lock systems and provided with a crimped terminal at each extremity, each of said crimped terminals comprising a crimping component (21) and an engaging member (22) suitable to mount the spring (23) into the linear actuator. The invention further discloses the use of said spring (23) with particular geometrical characteristics and crimping system assuring the maximization of the available stroke and fatigue life, structural simplicity, low electrical power requirements and thermal inertia, small size.

Abstract: Systems, methods, and apparatuses are provided for digit line formation for horizontally oriented access devices.

Abstract: Some embodiments include an integrated assembly having first and second source/drain regions laterally offset from one another. Metal silicide is adjacent to lateral surfaces of the source/drain regions. Metal is adjacent to the metal silicide. Container-shaped first and second capacitor electrodes are coupled to the source/drain regions through the metal silicide and the metal. Capacitor dielectric material lines interior surfaces of the container-shaped first and second capacitor electrodes, A shared capacitor electrode extends vertically between the first and second capacitor electrodes, and extends into the lined first and second capacitor electrodes. Some embodiments include methods of forming integrated assemblies.

Abstract: The present invention relates to linear actuators comprising an electrically-controlled shape memory alloy coil spring (23) suitable to provide linear displacements in valves, switches, lock systems and provided with a crimped terminal at each extremity, each of said crimped terminals comprising a crimping component (21) and an engaging member (22) suitable to mount the spring (23) into the linear actuator. The invention further discloses the use of said spring (23) with particular geometrical characteristics and crimping system assuring the maximization of the available stroke and fatigue life, structural simplicity, low electrical power requirements and thermal inertia, small size.

Abstract: Systems, methods, and apparatuses are provided for digit line formation for horizontally oriented access devices.

Abstract: A method of forming an apparatus comprises forming a first metal nitride material over an upper surface of a conductive material within an opening extending through at least one dielectric material through a non-conformal deposition process. A second metal nitride material is formed over an upper surface of the first metal nitride material and side surfaces of the at least one dielectric material partially defining boundaries of the opening through a conformal deposition process. A conductive structure is formed over surfaces of the second metal nitride material within the opening. Apparatuses and electronic systems are also described.

Abstract: A microelectronic device comprises a first conductive structure, a barrier structure, a conductive liner structure, and a second conductive structure. The first conductive structure is within a first filled opening in a first dielectric structure. The barrier structure is within the first filled opening in the first dielectric structure and vertically overlies the first conductive structure. The conductive liner structure is on the barrier structure and is within a second filled opening in a second dielectric structure vertically overlying the first dielectric structure. The second conductive structure vertically overlies and is horizontally surrounded by the conductive liner structure within the second filled opening in the second dielectric structure. Memory devices, electronic systems, and methods of forming microelectronic devices are also described.

Abstract: Some embodiments include an apparatus having a structure with a surface which comprises tungsten. The apparatus has titanium-nitride-containing protective material along and directly against the surface. The structure may be a digit line of a memory array. Some embodiments include a method in which an assembly is formed to have a tungsten-containing layer with an exposed tungsten-containing upper surface. Titanium-nitride-containing protective material is formed over and directly against the tungsten-containing upper surface. Additional material is formed over the protective material, and is spaced from the tungsten-containing upper surface by the protective material. The additional material may comprise silicon nitride and/or silicon dioxide.

Abstract: Some embodiments include an apparatus having a structure with a surface which comprises tungsten. The apparatus has titanium-nitride-containing protective material along and directly against the surface. The structure may be a digit line of a memory array. Some embodiments include a method in which an assembly is formed to have a tungsten-containing layer with an exposed tungsten-containing upper surface. Titanium-nitride-containing protective material is formed over and directly against the tungsten-containing upper surface. Additional material is formed over the protective material, and is spaced from the tungsten-containing upper surface by the protective material. The additional material may comprise silicon nitride and/or silicon dioxide.

Abstract: An apparatus and a relative method for measuring straightness errors of elongated-shape elements, such as bars, tubes and the like is presented. The measuring apparatus includes a supporting system for a bar, a first detecting system having one or more first sensors to detect the development of the longitudinal axis of the bar, and a central control unit. The measuring apparatus further includes a second detecting system provided with a plurality of second sensors to detect the forces the bar applies to the supporting system and acquiring means to acquire at least one physical parameter of the bar under measuring. The central control unit includes at least one data acquiring and processing module to acquire and process the data detected by said first and second detecting systems and acquired by said acquiring means, in order to determine the possible straightness error of the bar.