Patents by Inventor Lucia D'Urzo

Lucia D'Urzo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Atomic layer deposition of antimony oxide films
    Patent number: 10699899
    Abstract: Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt)3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.
    Type: Grant
    Filed: August 20, 2018
    Date of Patent: June 30, 2020
    Assignee: ASM International N.V.
    Inventors: Raija H. Matero, Linda Lindroos, Hessel Sprey, Jan Willem Maes, David de Roest, Dieter Pierreux, Kees van der Jeugd, Lucia D'Urzo, Tom E. Blomberg
  • ATOMIC LAYER DEPOSITION OF ANTIMONY OXIDE FILMS
    Publication number: 20190103266
    Abstract: Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt)3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.
    Type: Application
    Filed: August 20, 2018
    Publication date: April 4, 2019
    Inventors: Raija H. Matero, Linda Lindroos, Hessel Sprey, Jan Willem Maes, David de Roest, Dieter Pierreux, Kees van der Jeugd, Lucia D'Urzo, Tom E. Blomberg
  • Atomic layer deposition of antimony oxide films
    Patent number: 10056249
    Abstract: Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt)3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.
    Type: Grant
    Filed: November 22, 2016
    Date of Patent: August 21, 2018
    Assignee: ASM International N.V.
    Inventors: Raija H. Matero, Linda Lindroos, Hessel Sprey, Jan Willem Maes, David de Roest, Dieter Pierreux, Kees van der Jeugd, Lucia D'Urzo, Tom E. Blomberg
  • ATOMIC LAYER DEPOSITION OF ANTIMONY OXIDE FILMS
    Publication number: 20170140918
    Abstract: Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt)3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.
    Type: Application
    Filed: November 22, 2016
    Publication date: May 18, 2017
    Inventors: Raija H. Matero, Linda Lindroos, Hessel Sprey, Jan Willem Maes, David de Roest, Dieter Pierreux, Kees van der Jeugd, Lucia D'Urzo, Tom E. Blomberg
  • Atomic layer deposition of antimony oxide films
    Patent number: 9514934
    Abstract: Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt)3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.
    Type: Grant
    Filed: March 13, 2015
    Date of Patent: December 6, 2016
    Assignee: ASM International N.V.
    Inventors: Raija H. Matero, Linda Lindroos, Hessel Sprey, Jan Willem Maes, David De Roest, Dieter Pierreux, Kees Van Der Jeugd, Lucia D'Urzo, Tom E. Blomberg
  • ATOMIC LAYER DEPOSITION OF ANTIMONY OXIDE FILMS
    Publication number: 20150249005
    Abstract: Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt)3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.
    Type: Application
    Filed: March 13, 2015
    Publication date: September 3, 2015
    Inventors: RAIJA H. MATERO, LINDA LINDROOS, HESSEL SPREY, JAN WILLEM MAES, DAVID DE ROEST, DIETER PIERREUX, KEES VAN DER JEUGD, LUCIA D'URZO, TOM E. BLOMBERG
  • Atomic layer deposition of antimony oxide films
    Patent number: 9006112
    Abstract: Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt)3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.
    Type: Grant
    Filed: October 11, 2012
    Date of Patent: April 14, 2015
    Assignee: ASM International N.V.
    Inventors: Raija H. Matero, Linda Lindroos, Hessel Sprey, Jan Willem Maes, David de Roest, Dieter Pierreux, Kees van der Jeugd, Lucia D'Urzo, Tom E. Blomberg