Abstract: A sensor device includes a silicon substrate having an active surface; a first sensing area disposed near a first edge of the active surface of the silicon substrate such that the first sensing area has at least one first magnetic sensing element is made of a first compound semiconductor material and contact pads; and a second sensing area disposed near a second edge of the active surface of the silicon substrate, such that the second edge is substantially opposite to the first edge, such that the second sensing area has at least one second magnetic sensing element made of a second compound semiconductor material and contact pads. A processing circuit is disposed of in the silicon substrate and is electrically connected via wire bonds and/or a redistribution layer with the contact pads of the first and second sensing areas.

Abstract: A magnetoelastic torque sensor system includes a shaft having at least one axial section magnetized in a circumferential direction; and a magnetic sensor device arranged in the vicinity of the shaft. The sensor device has a first semiconductor substrate having a processing circuit, a second semiconductor substrate having a first magnetic sensor, and a third semiconductor substrate having a second magnetic sensor. Each magnetic sensor is configured for measuring a magnetic field component. The first, second and third semiconductor substrates are incorporated in a single packaged device. The processing circuit is configured for determining a pairwise difference between the magnetic field components, and for outputting a signal or a value indicative of a torque exerted upon the shaft, based on said pairwise difference. A method of measuring a torque exerted upon a shaft is provided.

Abstract: A current sensor system has a conductor and a packaged integrated circuit for sensing a current in the conductor. The conductor is external to the packaged integrated circuit. The packaged integrated circuit includes a substrate having an active surface and a back surface; one or more magnetic sensing elements; a processing circuit arranged to process signals received from the one or more magnetic sensing elements to derive an output signal indicative of a sensed current in the conductor; a housing; a plurality of leads; electrical connections between the leads and the active surface. The back surface of the substrate is disposed on a support formed by at least two inner lead portions of the plurality of leads and the active side of the substrate is oriented towards the outer ends of the outer lead portions of the leads in a direction perpendicular to a plane defined by the support.

Abstract: A current sensor system has a conductor and a packaged integrated circuit for sensing a current in the conductor. The conductor is external to the packaged integrated circuit. The packaged integrated circuit includes a substrate having an active surface and a back surface; one or more magnetic sensing elements; a processing circuit arranged to process signals received from the one or more magnetic sensing elements to derive an output signal indicative of a sensed current in the conductor; a housing; a plurality of leads; electrical connections between the leads and the active surface. The back surface of the substrate is disposed on a support formed by at least two inner lead portions of the plurality of leads and the active side of the substrate is oriented towards the outer ends of the outer lead portions of the leads in a direction perpendicular to a plane defined by the support.

Abstract: A sensor device includes a silicon substrate having an active surface; a first sensing area disposed near a first edge of the active surface of the silicon substrate such that the first sensing area has at least one first magnetic sensing element is made of a first compound semiconductor material and contact pads; and a second sensing area disposed near a second edge of the active surface of the silicon substrate, such that the second edge is substantially opposite to the first edge, such that the second sensing area has at least one second magnetic sensing element made of a second compound semiconductor material and contact pads. A processing circuit is disposed of in the silicon substrate and is electrically connected via wire bonds and/or a redistribution layer with the contact pads of the first and second sensing areas.

Abstract: A sensor device includes a silicon substrate having an active surface; a first sensing area disposed near a first edge of the active surface of the silicon substrate such that the first sensing area has at least one first magnetic sensing element is made of a first compound semiconductor material and contact pads; and a second sensing area disposed near a second edge of the active surface of the silicon substrate, such that the second edge is substantially opposite to the first edge, such that the second sensing area has at least one second magnetic sensing element made of a second compound semiconductor material and contact pads. A processing circuit is disposed of in the silicon substrate and is electrically connected via wire bonds and/or a redistribution layer with the contact pads of the first and second sensing areas.

Abstract: A semiconductor stack for a Hall effect device, which comprises: a bottom barrier comprising AlxGa1-xAs, a channel comprising InyGa1-yAs, on the bottom barrier, a channel barrier with a thickness which is at least 2 nm and which is smaller than or equal to 15 nm, and which at least comprises a first layer comprising AlzGa1-zAs with 0.1?z?0.22, wherein the first layer has a thickness of at least 2 nm, wherein a conduction band edge of the bottom barrier and the first layer is higher than a conduction band edge of the channel, a doping layer comprising a composition of Al, Ga and As and doped with n-type material, a top barrier comprising a composition of Al, Ga and As.

Abstract: A current sensor system has a conductor and a packaged integrated circuit for sensing a current in the conductor. The conductor is external to the packaged integrated circuit. The packaged integrated circuit includes a substrate having an active surface and a back surface; one or more magnetic sensing elements; a processing circuit arranged to process signals received from the one or more magnetic sensing elements to derive an output signal indicative of a sensed current in the conductor; a housing; a plurality of leads; electrical connections between the leads and the active surface. The back surface of the substrate is disposed on a support formed by at least two inner lead portions of the plurality of leads and the active side of the substrate is oriented towards the outer ends of the outer lead portions of the leads in a direction perpendicular to a plane defined by the support.

Abstract: A sensor device includes a silicon substrate having an active surface; a first sensing area disposed near a first edge of the active surface of the silicon substrate such that the first sensing area has at least one first magnetic sensing element is made of a first compound semiconductor material and contact pads; and a second sensing area disposed near a second edge of the active surface of the silicon substrate, such that the second edge is substantially opposite to the first edge, such that the second sensing area has at least one second magnetic sensing element made of a second compound semiconductor material and contact pads. A processing circuit is disposed of in the silicon substrate and is electrically connected via wire bonds and/or a redistribution layer with the contact pads of the first and second sensing areas.

Abstract: A semiconductor stack for a Hall effect device, which comprises: a bottom barrier comprising AlxGa1-xAs, a channel comprising InyGa1-yAs, on the bottom barrier, a channel barrier with a thickness which is at least 2 nm and which is smaller than or equal to 15 nm, and which at least comprises a first layer comprising AlzGa1-zAs with 0.1?z?0.22, wherein the first layer has a thickness of at least 2 nm, wherein a conduction band edge of the bottom barrier and the first layer is higher than a conduction band edge of the channel, a doping layer comprising a composition of Al, Ga and As and doped with n-type material, a top barrier comprising a composition of Al, Ga and As.

Abstract: An apparatus and a method for redundant measurements of a magnetic field originating from or influenced by a moveable object is described. The apparatus comprising at least one first magnetic field sensitive element measuring at least one magnetic field property of the magnetic field, wherein the at least one first magnetic field sensitive element is implemented on a first area of a semiconductor substrate, at least one second magnetic field sensitive element measuring at least one magnetic field property of the magnetic field, wherein the at least one second magnetic field sensitive element is implemented on a second area of said semiconductor substrate, and wherein the first and second areas are isolated from one another.

Abstract: A multi-element sensor includes a substrate having a surface. A first sensing element for sensing an environmental attribute is disposed on or over the substrate surface. A second sensing element is disposed over the same substrate surface as the first sensing element, above the first sensing element in a direction orthogonal to the substrate surface. The second sensing element is arranged for sensing the same environmental attribute. In one configuration, the first and second sensing elements sense the same environmental attribute at a location between the first and second sensing elements.

Abstract: An apparatus and a method for redundant measurements of a magnetic field originating from or influenced by a moveable object is described. The apparatus comprising at least one first magnetic field sensitive element measuring at least one magnetic field property of the magnetic field, wherein the at least one first magnetic field sensitive element is implemented on a first area of a semiconductor substrate, at least one second magnetic field sensitive element measuring at least one magnetic field property of the magnetic field, wherein the at least one second magnetic field sensitive element is implemented on a second area of said semiconductor substrate, and wherein the first and second areas are isolated from one another.

Abstract: A multi-element sensor includes a substrate having a surface. A first sensing element for sensing an environmental attribute is disposed on or over the substrate surface. A second sensing element is disposed over the same substrate surface as the first sensing element, above the first sensing element in a direction orthogonal to the substrate surface. The second sensing element is arranged for sensing the same environmental attribute. In one configuration, the first and second sensing elements sense the same environmental attribute at a location between the first and second sensing elements.