Abstract: A method to determine noise parameters of a scalable device, is presented in which the determination of the noise parameters of the scalable device is independent of the model adopted for the device. The scalable device is connected as part of a test circuit including a noise source, a recirculator, a first power detector and a second power detector. The first power detector is connected to the recirculator and between the noise source and the scalable device and the second detector is connected to the device under test.

Abstract: A method to determine noise parameters of a scalable device, is presented in which the determination of the noise parameters of the scalable device is independent of the model adopted for the device. The scalable device is connected as part of a test circuit including a noise source, a recirculator, a first power detector and a second power detector. The first power detector is connected to the recirculator and between the noise source and the scalable device and the second detector is connected to the device under test.

Abstract: Systems and method are provided for making a balun's operational bandwidth tunable around multiple distinct center frequencies by using switches to vary the balun's dimensions. An embodiment of the present disclosure uses a pass gate structure for the switches, and the switches connect additional lengths of line in or out of the balun to change its frequency response. A balun in accordance with an embodiment of the present disclosure is able to switch its response between 2 or more adjacent bands by switching additional length of lines in and out of the balun's core windings.

Abstract: A procedure for obtaining noise temperatures of a field effect transistor (FET) embedded on a wafer through an analytical procedure which processes measured noise figure data over transistor's size Pd within a frequency range at constant voltage and current density. The parasitic elements associated with an electrical model of the embedding structures are determined. Then, for each of n=1, 2, . . . N FETs, the scattering parameters and noise figure Fmeas,n are measured, the components of the core model, normalized to the periphery Pd are determined, and the noise contributions of the parasitic components are de-embedded from Fmeas,n. The noise temperatures tgs, tds, and tgd are found by solving the equation 4 ? N i ? G s ? ( F meas , n - 1 ) - y s + ? C T A ? y s - y s + ? T B , n ? T A ? C T C ? T A + ? T B , n + ? y s P d n = A n ? t ds + B n ? t gs + C n ? t gd using at least three values of Fmeas,n and Pd,n.

Abstract: Systems and method are provided for making a balun's operational bandwidth tunable around multiple distinct center frequencies by using switches to vary the balun's dimensions. An embodiment of the present disclosure uses a pass gate structure for the switches, and the switches connect additional lengths of line in or out of the balun to change its frequency response. A balun in accordance with an embodiment of the present disclosure is able to switch its response between 2 or more adjacent bands by switching additional length of lines in and out of the balun's core windings.

Abstract: A procedure for obtaining noise temperatures of a field effect transistor (FET) embedded on a wafer through an analytical procedure which processes measured noise figure data over transistor's size Pd within a frequency range at constant voltage and current density. The parasitic elements associated with an electrical model of the embedding structures are determined. Then, for each of n=1, 2, . . . N FETs, the scattering parameters and noise figure Fmeas,n are measured, the components of the core model, normalized to the periphery Pd are determined, and the noise contributions of the parasitic components are de-embedded from Fmeas,n. The noise temperatures tgs, tds, and tgd are found by solving the equation 4 ? N i ? G s ? ( F meas , n - 1 ) - y s + ? C T A ? y s - y s + ? T B , n ? T A ? C T C ? T A + ? T B , n + ? y s P d n = A n ? t ds + B n ? t gs + C n ? t gd using at least three values of Fmeas,n and Pd,n.