Patents by Inventor Lucio PANCHERI

Lucio PANCHERI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11081614
    Abstract: This disclosure provides a semiconductor sensor of ionizing radiation and/or ionizing particles with a backside bias electrode and a backside junction for completely depleting the semiconductor substrate up to carrier collection regions each connected to a respective collection electrode of carriers generated by ionization in the substrate. Differently from prior sensors, the sensor of this disclosure has an intermediate semiconductor layer formed upon the substrate, having a greater doping concentration than the doping concentration of the substrate and a doping of a same type. In this intermediate layer, buried doped regions of opposite type one separated from the other are formed for shielding superficial regions in which readout circuits are defined.
    Type: Grant
    Filed: October 22, 2018
    Date of Patent: August 3, 2021
    Assignee: LFOUNDRY S.R.L.
    Inventors: Angelo Rivetti, Lucio Pancheri, Piero Giubilato, Manuel Dionisio Da Rocha Rolo, Giovanni Margutti, Onorato Di Cola
  • Patent number: 10811555
    Abstract: Silicon Particle Detector, comprising an absorption region (10) capable of generating electrical charges in response to a particle passing therethrough, a first and a second electrode (20, 30) arranged on opposite sides of the absorption region (10), wherein the first electrode (20) is segmented into a plurality of pads (20a), and a plurality of multiplication layers (40) able to avalanche-multiply the electric charges generated in the absorption region (10), each of the multiplication layers (40) being arranged beneath a respective pad (20a) and interposed between it and the absorption region (10), each multiplication layer (40) is surrounded by a respective protection ring (50) formed by the material of the pad (20a). The protection ring (50) is laterally interposed between the multiplication layer (40) and the absorption region (10).
    Type: Grant
    Filed: September 12, 2017
    Date of Patent: October 20, 2020
    Assignee: Istituto Nazionale di Fisica Nucleare
    Inventors: Nicolò Cartiglia, Gian Franco Dalla Betta, Lucio Pancheri, Maurizio Boscardin, Giovanni Paternoster
  • Publication number: 20200328321
    Abstract: This disclosure provides a semiconductor sensor of ionizing radiation and/or ionizing particles with a backside bias electrode and a backside junction for completely depleting the semiconductor substrate up to carrier collection regions each connected to a respective collection electrode of carriers generated by ionization in the substrate. Differently from prior sensors, the sensor of this disclosure has an intermediate semiconductor layer formed upon the substrate, having a greater doping concentration than the doping concentration of the substrate and a doping of a same type. In this intermediate layer, buried doped regions of opposite type one separated from the other are formed for shielding superficial regions in which readout circuits are defined.
    Type: Application
    Filed: October 22, 2018
    Publication date: October 15, 2020
    Applicant: LFOUNDRY S.R.L.
    Inventors: Angelo RIVETTI, Lucio PANCHERI, Piero GIUBILATO, Manuel Dionisio DA ROCHA ROLO, Giovanni MARGUTTI, Onorato DI COLA
  • Publication number: 20190198704
    Abstract: Silicon Particle Detector, comprising an absorption region (10) capable of generating electrical charges in response to a particle passing therethrough, a first and a second electrode (20, 30) arranged on opposite sides of the absorption region (10), wherein the first electrode (20) is segmented into a plurality of pads (20a), and a plurality of multiplication layers (40) able to avalanche-multiply the electric charges generated in the absorption region (10), each of the multiplication layers (40) being arranged beneath a respective pad (20a) and interposed between it and the absorption region (10), each multiplication layer (40) is surrounded by a respective protection ring (50) formed by the material of the pad (20a). The protection ring (50) is laterally interposed between the multiplication layer (40) and the absorption region (10).
    Type: Application
    Filed: September 12, 2017
    Publication date: June 27, 2019
    Inventors: Nicolò CARTIGLIA, Gian Franco DALLA BETTA, Lucio PANCHERI, Maurizio BOSCARDIN, Giovanni PATERNOSTER