Abstract: A method includes forming a first aluminum silicon layer on a metal layer and forming a titanium nitride layer (or other titanium-based layer) on a surface of the aluminum-silicon layer opposite the metal layer. The method further includes etching the titanium nitride layer to create a titanium nitride pad and forming a torsion hinge in the metal layer. The titanium nitride pad is on the torsion hinge. The method also includes depositing a sacrificial layer over the torsion hinge and titanium nitride pad, forming a via in the sacrificial layer from a surface of the sacrificial layer opposite the torsion hinge to the titanium nitride pad, depositing a metal mirror layer on a surface of the sacrificial layer opposite the torsion hinge and into the via, and removing the sacrificial layer.

Abstract: A method includes forming a first aluminum silicon layer on a metal layer and forming a titanium nitride layer (or other titanium-based layer) on a surface of the aluminum-silicon layer opposite the metal layer. The method further includes etching the titanium nitride layer to create a titanium nitride pad and forming a torsion hinge in the metal layer. The titanium nitride pad is on the torsion hinge. The method also includes depositing a sacrificial layer over the torsion hinge and titanium nitride pad, forming a via in the sacrificial layer from a surface of the sacrificial layer opposite the torsion hinge to the titanium nitride pad, depositing a metal mirror layer on a surface of the sacrificial layer opposite the torsion hinge and into the via, and removing the sacrificial layer.

Abstract: A method includes forming a first aluminum silicon layer on a metal layer and forming a titanium nitride layer (or other titanium-based layer) on a surface of the aluminum-silicon layer opposite the metal layer. The method further includes etching the titanium nitride layer to create a titanium nitride pad and forming a torsion hinge in the metal layer. The titanium nitride pad is on the torsion hinge. The method also includes depositing a sacrificial layer over the torsion hinge and titanium nitride pad, forming a via in the sacrificial layer from a surface of the sacrificial layer opposite the torsion hinge to the titanium nitride pad, depositing a metal mirror layer on a surface of the sacrificial layer opposite the torsion hinge and into the via, and removing the sacrificial layer.

Abstract: A die includes a resist layer located over a semiconductor substrate, and a pattern developed in the resist layer. The pattern includes a plurality of locations of developed photoresist, each location of developed photoresist separated from a neighboring location of developed photoresist by a portion of undeveloped photoresist, and the developed photoresist at each location having a corresponding different thickness.

Abstract: Methods and apparatus to control grayscale lithography are disclosed. A disclosed example apparatus for adjusting a grayscale lithography process includes an optical measurement device to optically measure portions of a patterned wafer, and a processor to calculate a profile based on the measured portions, and to determine an adjustment of the grayscale lithography process based on the calculated profile. The disclosed apparatus also includes an adjuster to control the grayscale lithography process based on the adjustment.

Abstract: A method includes forming a first aluminum silicon layer on a metal layer and forming a titanium nitride layer (or other titanium-based layer) on a surface of the aluminum-silicon layer opposite the metal layer. The method further includes etching the titanium nitride layer to create a titanium nitride pad and forming a torsion hinge in the metal layer. The titanium nitride pad is on the torsion hinge. The method also includes depositing a sacrificial layer over the torsion hinge and titanium nitride pad, forming a via in the sacrificial layer from a surface of the sacrificial layer opposite the torsion hinge to the titanium nitride pad, depositing a metal mirror layer on a surface of the sacrificial layer opposite the torsion hinge and into the via, and removing the sacrificial layer.

Abstract: Methods and apparatus to control grayscale lithography are disclosed. A disclosed example apparatus for adjusting a grayscale lithography process includes an optical measurement device to optically measure portions of a patterned wafer, and a processor to calculate a profile based on the measured portions, and to determine an adjustment of the grayscale lithography process based on the calculated profile. The disclosed apparatus also includes an adjuster to control the grayscale lithography process based on the adjustment.

Abstract: A method of forming an electronic device includes providing a patterned lower metal layer over a substrate and a first sacrificial layer there between. A second sacrificial layer is formed over the metal layer, and a portion thereof is removed. A third sacrificial layer is formed over the second sacrificial layer, and an upper metal layer is formed over the third sacrificial layer. A portion of the upper metal layer is removed, and the first, second and third sacrificial layers are removed.

Abstract: A method of forming an electronic device includes providing a patterned lower metal layer over a substrate and a first sacrificial layer there between. A second sacrificial layer is formed over the metal layer, and a portion thereof is removed. A third sacrificial layer is formed over the second sacrificial layer, and an upper metal layer is formed over the third sacrificial layer. A portion of the upper metal layer is removed, and the first, second and third sacrificial layers are removed.

Abstract: A portable particle detection and removal system (100) that connects to a house vacuum (200). A particle sensor (106) is connected between two hoses: one (102) connected to the house vacuum (200) and one (104) for vacuuming the wafer equipment chamber. A smaller diameter hose (104) may be used for vacuuming the wafer equipment chamber. The particle sensor detects (106) incoming particles and a particle count is displayed for the operator. A modulated cleaning system (112) modulates the vacuum pressure in the second hose (104) between two vacuum pressure states.

Abstract: A portable particle detection and removal system (100) that connects to a house vacuum (200). A particle sensor (106) is connected between two hoses: one (102) connected to the house vacuum (200) and one (104) for vacuuming the wafer equipment chamber. A smaller diameter hose (104) may be used for vacuuming the wafer equipment chamber. The particle sensor detects (106) incoming particles and a particle count is displayed for the operator. A modulated cleaning system (112) modulates the vacuum pressure in the second hose (104) between two vacuum pressure states.