Abstract: Described is a monolithic integrated circuit for use in quantum computing based on single and multiple coupled quantum dot electron- and hole-spin qubits monolithically integrated with the mm-wave spin manipulation and readout circuitry in commercial complementary metal-oxide-semiconductor (CMOS) technology. The integrated circuit includes a plurality of n-channel or p-channel metal-oxide-semiconductor field-effect transistor (MOSFET) cascodes each including a single-spin qubit or two coupled quantum dot qubits formed in an undoped semiconductor film adjacent at least one top gate. There is also a back gate formed in a silicon substrate adjacent a buried oxide layer or the at least one top gate, where the back gate controls the electron or hole entanglement and exchange interaction between the two coupled quantum dot qubits. The monolithic integrated circuits described may be used for monolithically integrated semiconductor quantum processors for quantum information processing.

Abstract: Described is a monolithic integrated circuit for use in quantum computing based on single and multiple coupled quantum dot electron- and hole-spin qubits monolithically integrated with the mm-wave spin manipulation and readout circuitry in commercial complementary metal-oxide-semiconductor (CMOS) technology. The integrated circuit includes a plurality of n-channel or p-channel metal-oxide-semiconductor field-effect transistor (MOSFET) cascodes each including a single-spin qubit or two coupled quantum dot qubits formed in an undoped semiconductor film adjacent at least one top gate. There is also a back gate formed in a silicon substrate adjacent a buried oxide layer or the at least one top gate, where the back gate controls the electron or hole entanglement and exchange interaction between the two coupled quantum dot qubits. The monolithic integrated circuits described may be used for monolithically integrated semiconductor quantum processors for quantum information processing.

Abstract: The present disclosure provides a system and method for responding to an unintended increase in pressure within a high pressure processing system. The system and method of the present disclosure provides a pressure relief system that releases pressure reliably even if the material under pressure is of mixed phase. In addition, the system and method for releasing pressure avoids the need for complex subsystems to contain and process materials that escape the system during the pressure release process.

Abstract: The present disclosure provides a system and method for responding to an unintended increase in pressure within a high pressure processing system. The system and method of the present disclosure provides a pressure relief system that releases pressure reliably even if the material under pressure is of mixed phase. In addition, the system and method for releasing pressure avoids the need for complex subsystems to contain and process materials that escape the system during the pressure release process.