Patents by Inventor Lucy Zhiping Chen

Lucy Zhiping Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200006036
    Abstract: Embodiments described herein relate to apparatus and methods for performing electron beam etching process. In one embodiment, a method of etching a substrate includes delivering a process gas to a process volume of a process chamber, applying a RF power to an electrode formed from a high secondary electron emission coefficient material disposed in the process volume, generating a plasma comprising ions in the process volume, bombarding the electrode with the ions to cause the electrode to emit electrons and form an electron beam, applying a negative DC power to the electrode, accelerating electrons emitted from the bombarded electrode toward a substrate disposed in the process chamber, and etching the substrate with the accelerated ions.
    Type: Application
    Filed: April 22, 2019
    Publication date: January 2, 2020
    Inventors: Yue GUO, Yang YANG, Kartik RAMASWAMY, Kenneth S. COLLINS, Steven LANE, Gonzalo MONROY, Lucy Zhiping CHEN
  • Publication number: 20190393053
    Abstract: Embodiments described herein relate to apparatus for performing electron beam reactive plasma etching (EBRPE). In one embodiment, an apparatus for performing EBRPE processes includes an electrode formed from a material having a high secondary electron emission coefficient. In another embodiment, an electrode is movably disposed within a process volume of a process chamber and capable of being positioned at a non-parallel angle relative to a pedestal opposing the electrode. In another embodiment, a pedestal is movably disposed with a process volume of a process chamber and capable of being positioned at a non-parallel angle relative to an electrode opposing the pedestal. Electrons emitted from the electrode are accelerated toward a substrate disposed on the pedestal to induce etching of the substrate.
    Type: Application
    Filed: June 14, 2019
    Publication date: December 26, 2019
    Inventors: Yang YANG, Kartik RAMASWAMY, Kenneth S. COLLINS, Steven LANE, Gonzalo MONROY, Lucy Zhiping CHEN, Yue GUO
  • Publication number: 20190221437
    Abstract: Embodiments described herein relate to apparatus and methods for performing electron beam reactive plasma etching (EBRPE). In one embodiment, an apparatus for performing EBRPE processes includes an electrode formed from a material having a high secondary electron emission coefficient. In another embodiment, methods for etching a substrate include generating a plasma and bombarding an electrode with ions from the plasma to cause the electrode to emit electrons. The electrons are accelerated toward a substrate to induce etching of the substrate.
    Type: Application
    Filed: January 3, 2019
    Publication date: July 18, 2019
    Inventors: Yang YANG, Kartik RAMASWAMY, Kenneth S. COLLINS, Steven LANE, Gonzalo MONROY, Lucy Zhiping CHEN, Yue GUO
  • Publication number: 20190057862
    Abstract: A method of forming a transparent carbon layer on a substrate is provided. The method comprises generating an electron beam plasma above a surface of a substrate positioned over a first electrode and disposed in a processing chamber having a second electrode positioned above the first electrode. The method further comprises flowing a hydrocarbon-containing gas mixture into the processing chamber, wherein the second electrode has a surface containing a secondary electrode emission material selected from a silicon-containing material and a carbon-containing material. The method further comprises applying a first RF power to at least one of the first electrode and the second electrode and forming a transparent carbon layer on the surface of the substrate.
    Type: Application
    Filed: August 6, 2018
    Publication date: February 21, 2019
    Inventors: Yang YANG, Eswaranand VENKATASUBRAMANIAN, Kartik RAMASWAMY, Kenneth S. COLLINS, Steven LANE, Gonzalo MONROY, Lucy Zhiping CHEN, Yue GUO
  • Publication number: 20040200498
    Abstract: A method of cleaning process residues formed on surfaces in a chamber during processing of a substrate in the chamber includes first and second steps. In a first cleaning step, a first energized cleaning gas having a first chlorine-containing gas and oxygen is provided in the chamber and then exhausted. In a second cleaning step, a second energized cleaning gas having a second chlorine-containing gas and oxygen is provided in the chamber and then exhausted.
    Type: Application
    Filed: April 8, 2003
    Publication date: October 14, 2004
    Applicant: Applied Materials, Inc.
    Inventors: Xikun Wang, Hui Chen, Lucy Zhiping Chen, Li Xu, Anbei Jiang, Hong Shih, Steve Mak