Patents by Inventor Ludovic Fallourd

Ludovic Fallourd has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250239505
    Abstract: The present description provides a method for manufacturing electronic components. with wettable flanks. In an example, the method of manufacturing electronic components is for electronic components with wettable flanks from a substrate. A first face of the substrate is covered by connection terminals. The substrate is in which chips are formed. The method includes soldering a metal grid comprising connection pads interconnected by bars to the connection terminals; forming an insulating resin layer on the substrate, wherein the insulating resin layer surrounds the connection pads; separating the chips from one another; and obtaining electronic components with wettable flanks, wherein a lateral part of the connection pads and a part of the insulating resin layer form the wettable flanks of the electronic components.
    Type: Application
    Filed: January 14, 2025
    Publication date: July 24, 2025
    Inventor: Ludovic FALLOURD
  • Publication number: 20250239481
    Abstract: A method of manufacturing an electronic chip is provided. An example method includes an electronic chip with passivated flanks from a semiconductor substrate having a first surface covered with connection terminals and inside of which are formed chips, and the method includes: depositing a protection layer onto the first surface of the substrate; forming trenches or cavities between the chips; depositing an insulating layer into the trenches or into the cavities by atomic layer deposition; and removing the protection layer.
    Type: Application
    Filed: January 13, 2025
    Publication date: July 24, 2025
    Inventors: Gregoire DELACOURT, Ludovic FALLOURD
  • Publication number: 20250191977
    Abstract: The present description relates to a method of fabricating an electronic chip with passivated flanks from a semiconductor substrate, a first face of which is covered by connection areas, and in which chips are formed, the method comprising the following steps: forming trenches or cavities between the chips; depositing an insulating material in the trenches or cavities; and separating the chips by cutting at least the insulating material.
    Type: Application
    Filed: November 25, 2024
    Publication date: June 12, 2025
    Inventors: Gregoire DELACOURT, Ludovic FALLOURD
  • Publication number: 20250174588
    Abstract: Process for manufacturing electronic components with wettable flanks from a substrate covered by connection terminals and in which chips are formed, the process comprising the following steps: a) solder connection pads to the connection terminals, b) coat the connection pads with a layer of insulating resin, c) thin the insulating resin layer until it reaches the core of the connection pads, d) form cavities by removing part of the connection pads and part of the insulating resin layer, so as to make part of the flanks of the components accessible, e) deposit a layer of conductive material on the flanks of the components and on the connection pads, f) separate the chips.
    Type: Application
    Filed: November 18, 2024
    Publication date: May 29, 2025
    Applicant: STMicroelectronics International N.V.
    Inventor: Ludovic FALLOURD
  • Patent number: 12230602
    Abstract: A method for manufacturing electronic chips includes depositing, on a side of an upper face of a semiconductor substrate, in and on which a plurality of integrated circuits has been formed, a protective resin. The method includes forming, in the protective resin, at least one cavity per integrated circuit, in contact with an upper face of the integrated circuit. Metal connection pillars are formed by filling the cavities with metal. The integrated circuits are separated into individual chips by cutting the protective resin along cut lines extending between the metal connection pillars.
    Type: Grant
    Filed: July 8, 2022
    Date of Patent: February 18, 2025
    Assignee: STMICROELECTRONICS (TOURS) SAS
    Inventors: Ludovic Fallourd, Christophe Serre
  • Patent number: 11923234
    Abstract: The present disclosure relates to a method for manufacturing electronic chips. The method includes forming a plurality of trenches on a first face of a semiconductor substrate, in and on which a plurality of integrated circuits has been formed. The trenches delimit laterally a plurality of chips, and each of the chips includes a single integrated circuit. The method further includes electrically isolating flanks of each of the chips by forming an electrically isolating layer on lateral walls of the trenches.
    Type: Grant
    Filed: November 17, 2020
    Date of Patent: March 5, 2024
    Assignee: STMicroelectronics (Tours) SAS
    Inventor: Ludovic Fallourd
  • Publication number: 20230230906
    Abstract: The present disclosure concerns a method of manufacturing an electronic component and the obtained component, comprising a substrate, comprising the successive steps of: depositing a first layer of a first resin activated by abrasion to become electrically conductive, on a first surface of said substrate comprising at least one electric contact and, at least partially, on the lateral flanks of said substrate; partially abrading said first layer on the flanks of said substrate.
    Type: Application
    Filed: January 13, 2023
    Publication date: July 20, 2023
    Applicant: STMICROELECTRONICS (TOURS) SAS
    Inventors: Nicolas MODE, Ludovic FALLOURD, Laurent BARREAU
  • Publication number: 20220344303
    Abstract: A method for manufacturing electronic chips includes depositing, on a side of an upper face of a semiconductor substrate, in and on which a plurality of integrated circuits has been formed, a protective resin. The method includes forming, in the protective resin, at least one cavity per integrated circuit, in contact with an upper face of the integrated circuit. Metal connection pillars are formed by filling the cavities with metal. The integrated circuits are separated into individual chips by cutting the protective resin along cut lines extending between the metal connection pillars.
    Type: Application
    Filed: July 8, 2022
    Publication date: October 27, 2022
    Applicant: STMICROELECTRONICS (TOURS) SAS
    Inventors: Ludovic FALLOURD, Christophe SERRE
  • Patent number: 11393785
    Abstract: A method for manufacturing electronic chips includes forming, on a side of an upper face of a semiconductor substrate, in and on which a plurality of integrated circuits has been formed, trenches laterally separating the integrated circuits. At least one metal connection pillar per integrated circuit is deposited on the side of the upper face of the substrate, and a protective resin extends in the trenches and on an upper face of the integrated circuits. The method further includes forming, from an upper face of the protective resin, openings located across from the trenches and extending over a width greater than or equal to that of the trenches, so as to clear a flank of at least one metal pillar of each integrated circuit. The integrated circuits are separated into individual chips by cutting.
    Type: Grant
    Filed: December 2, 2020
    Date of Patent: July 19, 2022
    Assignee: STMicroelectronics (Tours) SAS
    Inventors: Ludovic Fallourd, Christophe Serre
  • Patent number: 11393786
    Abstract: A method for manufacturing electronic chips includes depositing, on a side of an upper face of a semiconductor substrate, in and on which a plurality of integrated circuits has been formed, a protective resin. The method includes forming, in the protective resin, at least one cavity per integrated circuit, in contact with an upper face of the integrated circuit. Metal connection pillars are formed by filling the cavities with metal. The integrated circuits are separated into individual chips by cutting the protective resin along cut lines extending between the metal connection pillars.
    Type: Grant
    Filed: December 3, 2020
    Date of Patent: July 19, 2022
    Assignee: STMicroelectronics (Tours) SAS
    Inventors: Ludovic Fallourd, Christophe Serre
  • Patent number: 11367913
    Abstract: The disclosure concerns a battery assembly including two batteries having their active layers facing each other and sharing an encapsulation layer.
    Type: Grant
    Filed: February 7, 2019
    Date of Patent: June 21, 2022
    Assignee: STMICROELECTRONICS (TOURS) SAS
    Inventor: Ludovic Fallourd
  • Publication number: 20210175203
    Abstract: A method for manufacturing electronic chips includes forming, on a side of an upper face of a semiconductor substrate, in and on which a plurality of integrated circuits has been formed, trenches laterally separating the integrated circuits. At least one metal connection pillar per integrated circuit is deposited on the side of the upper face of the substrate, and a protective resin extends in the trenches and on an upper face of the integrated circuits. The method further includes forming, from an upper face of the protective resin, openings located across from the trenches and extending over a width greater than or equal to that of the trenches, so as to clear a flank of at least one metal pillar of each integrated circuit. The integrated circuits are separated into individual chips by cutting.
    Type: Application
    Filed: December 2, 2020
    Publication date: June 10, 2021
    Applicant: STMicroelectronics (Tours) SAS
    Inventors: Ludovic FALLOURD, Christophe SERRE
  • Publication number: 20210175204
    Abstract: A method for manufacturing electronic chips includes depositing, on a side of an upper face of a semiconductor substrate, in and on which a plurality of integrated circuits has been formed, a protective resin. The method includes forming, in the protective resin, at least one cavity per integrated circuit, in contact with an upper face of the integrated circuit. Metal connection pillars are formed by filling the cavities with metal. The integrated circuits are separated into individual chips by cutting the protective resin along cut lines extending between the metal connection pillars.
    Type: Application
    Filed: December 3, 2020
    Publication date: June 10, 2021
    Applicant: STMicroelectronics (Tours) SAS
    Inventors: Ludovic FALLOURD, Christophe SERRE
  • Publication number: 20210151347
    Abstract: The present disclosure relates to a method for manufacturing electronic chips. The method includes forming a plurality of trenches on a first face of a semiconductor substrate, in and on which a plurality of integrated circuits has been formed. The trenches delimit laterally a plurality of chips, and each of the chips includes a single integrated circuit. The method further includes electrically isolating flanks of each of the chips by forming an electrically isolating layer on lateral walls of the trenches.
    Type: Application
    Filed: November 17, 2020
    Publication date: May 20, 2021
    Inventor: Ludovic FALLOURD
  • Patent number: 10637013
    Abstract: Disclosed herein is an electronic device including a substrate, with an active layer stack on the substrate. A cover is on the active layer stack and has a surface area greater than that of the active layer so as to encapsulate the active layer stack. A conductive pad layer is on the cover. At least one conductive via extends between the active layer stack and the conductive pad layer.
    Type: Grant
    Filed: July 10, 2018
    Date of Patent: April 28, 2020
    Assignee: STMicroelectronics (Tours) SAS
    Inventor: Ludovic Fallourd
  • Publication number: 20190252649
    Abstract: The disclosure concerns a battery assembly including two batteries having their active layers facing each other and sharing an encapsulation layer.
    Type: Application
    Filed: February 7, 2019
    Publication date: August 15, 2019
    Inventor: Ludovic FALLOURD
  • Patent number: 10236480
    Abstract: Disclosed herein is an electronic device including a substrate, with an active layer stack on the substrate. A cover is on the active layer stack and has a surface area greater than that of the active layer so as to encapsulate the active layer stack. A conductive pad layer is on the cover. At least one conductive via extends between the active layer stack and the conductive pad layer.
    Type: Grant
    Filed: July 10, 2018
    Date of Patent: March 19, 2019
    Assignee: STMicroelectronics (Tours) SAS
    Inventor: Ludovic Fallourd
  • Publication number: 20180331332
    Abstract: Disclosed herein is an electronic device including a substrate, with an active layer stack on the substrate. A cover is on the active layer stack and has a surface area greater than that of the active layer so as to encapsulate the active layer stack. A conductive pad layer is on the cover. At least one conductive via extends between the active layer stack and the conductive pad layer.
    Type: Application
    Filed: July 10, 2018
    Publication date: November 15, 2018
    Applicant: STMicroelectronics (Tours) SAS
    Inventor: Ludovic Fallourd
  • Publication number: 20180315965
    Abstract: Disclosed herein is an electronic device including a substrate, with an active layer stack on the substrate. A cover is on the active layer stack and has a surface area greater than that of the active layer so as to encapsulate the active layer stack. A conductive pad layer is on the cover. At least one conductive via extends between the active layer stack and the conductive pad layer.
    Type: Application
    Filed: July 10, 2018
    Publication date: November 1, 2018
    Applicant: STMicroelectronics (Tours) SAS
    Inventor: Ludovic Fallourd
  • Patent number: 10044009
    Abstract: Disclosed herein is an electronic device including a substrate, with an active layer stack on the substrate. A cover is on the active layer stack and has a surface area greater than that of the active layer so as to encapsulate the active layer stack. A conductive pad layer is on the cover. At least one conductive via extends between the active layer stack and the conductive pad layer.
    Type: Grant
    Filed: September 8, 2016
    Date of Patent: August 7, 2018
    Assignee: STMicroelectronics (Tours) SAS
    Inventor: Ludovic Fallourd