Patents by Inventor Ludovic Fallourd
Ludovic Fallourd has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250239505Abstract: The present description provides a method for manufacturing electronic components. with wettable flanks. In an example, the method of manufacturing electronic components is for electronic components with wettable flanks from a substrate. A first face of the substrate is covered by connection terminals. The substrate is in which chips are formed. The method includes soldering a metal grid comprising connection pads interconnected by bars to the connection terminals; forming an insulating resin layer on the substrate, wherein the insulating resin layer surrounds the connection pads; separating the chips from one another; and obtaining electronic components with wettable flanks, wherein a lateral part of the connection pads and a part of the insulating resin layer form the wettable flanks of the electronic components.Type: ApplicationFiled: January 14, 2025Publication date: July 24, 2025Inventor: Ludovic FALLOURD
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Publication number: 20250239481Abstract: A method of manufacturing an electronic chip is provided. An example method includes an electronic chip with passivated flanks from a semiconductor substrate having a first surface covered with connection terminals and inside of which are formed chips, and the method includes: depositing a protection layer onto the first surface of the substrate; forming trenches or cavities between the chips; depositing an insulating layer into the trenches or into the cavities by atomic layer deposition; and removing the protection layer.Type: ApplicationFiled: January 13, 2025Publication date: July 24, 2025Inventors: Gregoire DELACOURT, Ludovic FALLOURD
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Publication number: 20250191977Abstract: The present description relates to a method of fabricating an electronic chip with passivated flanks from a semiconductor substrate, a first face of which is covered by connection areas, and in which chips are formed, the method comprising the following steps: forming trenches or cavities between the chips; depositing an insulating material in the trenches or cavities; and separating the chips by cutting at least the insulating material.Type: ApplicationFiled: November 25, 2024Publication date: June 12, 2025Inventors: Gregoire DELACOURT, Ludovic FALLOURD
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Publication number: 20250174588Abstract: Process for manufacturing electronic components with wettable flanks from a substrate covered by connection terminals and in which chips are formed, the process comprising the following steps: a) solder connection pads to the connection terminals, b) coat the connection pads with a layer of insulating resin, c) thin the insulating resin layer until it reaches the core of the connection pads, d) form cavities by removing part of the connection pads and part of the insulating resin layer, so as to make part of the flanks of the components accessible, e) deposit a layer of conductive material on the flanks of the components and on the connection pads, f) separate the chips.Type: ApplicationFiled: November 18, 2024Publication date: May 29, 2025Applicant: STMicroelectronics International N.V.Inventor: Ludovic FALLOURD
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Patent number: 12230602Abstract: A method for manufacturing electronic chips includes depositing, on a side of an upper face of a semiconductor substrate, in and on which a plurality of integrated circuits has been formed, a protective resin. The method includes forming, in the protective resin, at least one cavity per integrated circuit, in contact with an upper face of the integrated circuit. Metal connection pillars are formed by filling the cavities with metal. The integrated circuits are separated into individual chips by cutting the protective resin along cut lines extending between the metal connection pillars.Type: GrantFiled: July 8, 2022Date of Patent: February 18, 2025Assignee: STMICROELECTRONICS (TOURS) SASInventors: Ludovic Fallourd, Christophe Serre
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Patent number: 11923234Abstract: The present disclosure relates to a method for manufacturing electronic chips. The method includes forming a plurality of trenches on a first face of a semiconductor substrate, in and on which a plurality of integrated circuits has been formed. The trenches delimit laterally a plurality of chips, and each of the chips includes a single integrated circuit. The method further includes electrically isolating flanks of each of the chips by forming an electrically isolating layer on lateral walls of the trenches.Type: GrantFiled: November 17, 2020Date of Patent: March 5, 2024Assignee: STMicroelectronics (Tours) SASInventor: Ludovic Fallourd
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Publication number: 20230230906Abstract: The present disclosure concerns a method of manufacturing an electronic component and the obtained component, comprising a substrate, comprising the successive steps of: depositing a first layer of a first resin activated by abrasion to become electrically conductive, on a first surface of said substrate comprising at least one electric contact and, at least partially, on the lateral flanks of said substrate; partially abrading said first layer on the flanks of said substrate.Type: ApplicationFiled: January 13, 2023Publication date: July 20, 2023Applicant: STMICROELECTRONICS (TOURS) SASInventors: Nicolas MODE, Ludovic FALLOURD, Laurent BARREAU
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Publication number: 20220344303Abstract: A method for manufacturing electronic chips includes depositing, on a side of an upper face of a semiconductor substrate, in and on which a plurality of integrated circuits has been formed, a protective resin. The method includes forming, in the protective resin, at least one cavity per integrated circuit, in contact with an upper face of the integrated circuit. Metal connection pillars are formed by filling the cavities with metal. The integrated circuits are separated into individual chips by cutting the protective resin along cut lines extending between the metal connection pillars.Type: ApplicationFiled: July 8, 2022Publication date: October 27, 2022Applicant: STMICROELECTRONICS (TOURS) SASInventors: Ludovic FALLOURD, Christophe SERRE
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Patent number: 11393785Abstract: A method for manufacturing electronic chips includes forming, on a side of an upper face of a semiconductor substrate, in and on which a plurality of integrated circuits has been formed, trenches laterally separating the integrated circuits. At least one metal connection pillar per integrated circuit is deposited on the side of the upper face of the substrate, and a protective resin extends in the trenches and on an upper face of the integrated circuits. The method further includes forming, from an upper face of the protective resin, openings located across from the trenches and extending over a width greater than or equal to that of the trenches, so as to clear a flank of at least one metal pillar of each integrated circuit. The integrated circuits are separated into individual chips by cutting.Type: GrantFiled: December 2, 2020Date of Patent: July 19, 2022Assignee: STMicroelectronics (Tours) SASInventors: Ludovic Fallourd, Christophe Serre
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Patent number: 11393786Abstract: A method for manufacturing electronic chips includes depositing, on a side of an upper face of a semiconductor substrate, in and on which a plurality of integrated circuits has been formed, a protective resin. The method includes forming, in the protective resin, at least one cavity per integrated circuit, in contact with an upper face of the integrated circuit. Metal connection pillars are formed by filling the cavities with metal. The integrated circuits are separated into individual chips by cutting the protective resin along cut lines extending between the metal connection pillars.Type: GrantFiled: December 3, 2020Date of Patent: July 19, 2022Assignee: STMicroelectronics (Tours) SASInventors: Ludovic Fallourd, Christophe Serre
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Patent number: 11367913Abstract: The disclosure concerns a battery assembly including two batteries having their active layers facing each other and sharing an encapsulation layer.Type: GrantFiled: February 7, 2019Date of Patent: June 21, 2022Assignee: STMICROELECTRONICS (TOURS) SASInventor: Ludovic Fallourd
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Publication number: 20210175203Abstract: A method for manufacturing electronic chips includes forming, on a side of an upper face of a semiconductor substrate, in and on which a plurality of integrated circuits has been formed, trenches laterally separating the integrated circuits. At least one metal connection pillar per integrated circuit is deposited on the side of the upper face of the substrate, and a protective resin extends in the trenches and on an upper face of the integrated circuits. The method further includes forming, from an upper face of the protective resin, openings located across from the trenches and extending over a width greater than or equal to that of the trenches, so as to clear a flank of at least one metal pillar of each integrated circuit. The integrated circuits are separated into individual chips by cutting.Type: ApplicationFiled: December 2, 2020Publication date: June 10, 2021Applicant: STMicroelectronics (Tours) SASInventors: Ludovic FALLOURD, Christophe SERRE
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Publication number: 20210175204Abstract: A method for manufacturing electronic chips includes depositing, on a side of an upper face of a semiconductor substrate, in and on which a plurality of integrated circuits has been formed, a protective resin. The method includes forming, in the protective resin, at least one cavity per integrated circuit, in contact with an upper face of the integrated circuit. Metal connection pillars are formed by filling the cavities with metal. The integrated circuits are separated into individual chips by cutting the protective resin along cut lines extending between the metal connection pillars.Type: ApplicationFiled: December 3, 2020Publication date: June 10, 2021Applicant: STMicroelectronics (Tours) SASInventors: Ludovic FALLOURD, Christophe SERRE
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Publication number: 20210151347Abstract: The present disclosure relates to a method for manufacturing electronic chips. The method includes forming a plurality of trenches on a first face of a semiconductor substrate, in and on which a plurality of integrated circuits has been formed. The trenches delimit laterally a plurality of chips, and each of the chips includes a single integrated circuit. The method further includes electrically isolating flanks of each of the chips by forming an electrically isolating layer on lateral walls of the trenches.Type: ApplicationFiled: November 17, 2020Publication date: May 20, 2021Inventor: Ludovic FALLOURD
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Patent number: 10637013Abstract: Disclosed herein is an electronic device including a substrate, with an active layer stack on the substrate. A cover is on the active layer stack and has a surface area greater than that of the active layer so as to encapsulate the active layer stack. A conductive pad layer is on the cover. At least one conductive via extends between the active layer stack and the conductive pad layer.Type: GrantFiled: July 10, 2018Date of Patent: April 28, 2020Assignee: STMicroelectronics (Tours) SASInventor: Ludovic Fallourd
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Publication number: 20190252649Abstract: The disclosure concerns a battery assembly including two batteries having their active layers facing each other and sharing an encapsulation layer.Type: ApplicationFiled: February 7, 2019Publication date: August 15, 2019Inventor: Ludovic FALLOURD
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Patent number: 10236480Abstract: Disclosed herein is an electronic device including a substrate, with an active layer stack on the substrate. A cover is on the active layer stack and has a surface area greater than that of the active layer so as to encapsulate the active layer stack. A conductive pad layer is on the cover. At least one conductive via extends between the active layer stack and the conductive pad layer.Type: GrantFiled: July 10, 2018Date of Patent: March 19, 2019Assignee: STMicroelectronics (Tours) SASInventor: Ludovic Fallourd
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Publication number: 20180331332Abstract: Disclosed herein is an electronic device including a substrate, with an active layer stack on the substrate. A cover is on the active layer stack and has a surface area greater than that of the active layer so as to encapsulate the active layer stack. A conductive pad layer is on the cover. At least one conductive via extends between the active layer stack and the conductive pad layer.Type: ApplicationFiled: July 10, 2018Publication date: November 15, 2018Applicant: STMicroelectronics (Tours) SASInventor: Ludovic Fallourd
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Publication number: 20180315965Abstract: Disclosed herein is an electronic device including a substrate, with an active layer stack on the substrate. A cover is on the active layer stack and has a surface area greater than that of the active layer so as to encapsulate the active layer stack. A conductive pad layer is on the cover. At least one conductive via extends between the active layer stack and the conductive pad layer.Type: ApplicationFiled: July 10, 2018Publication date: November 1, 2018Applicant: STMicroelectronics (Tours) SASInventor: Ludovic Fallourd
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Patent number: 10044009Abstract: Disclosed herein is an electronic device including a substrate, with an active layer stack on the substrate. A cover is on the active layer stack and has a surface area greater than that of the active layer so as to encapsulate the active layer stack. A conductive pad layer is on the cover. At least one conductive via extends between the active layer stack and the conductive pad layer.Type: GrantFiled: September 8, 2016Date of Patent: August 7, 2018Assignee: STMicroelectronics (Tours) SASInventor: Ludovic Fallourd