Patents by Inventor Ludovic Fallourd
Ludovic Fallourd has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11923234Abstract: The present disclosure relates to a method for manufacturing electronic chips. The method includes forming a plurality of trenches on a first face of a semiconductor substrate, in and on which a plurality of integrated circuits has been formed. The trenches delimit laterally a plurality of chips, and each of the chips includes a single integrated circuit. The method further includes electrically isolating flanks of each of the chips by forming an electrically isolating layer on lateral walls of the trenches.Type: GrantFiled: November 17, 2020Date of Patent: March 5, 2024Assignee: STMicroelectronics (Tours) SASInventor: Ludovic Fallourd
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Publication number: 20230230906Abstract: The present disclosure concerns a method of manufacturing an electronic component and the obtained component, comprising a substrate, comprising the successive steps of: depositing a first layer of a first resin activated by abrasion to become electrically conductive, on a first surface of said substrate comprising at least one electric contact and, at least partially, on the lateral flanks of said substrate; partially abrading said first layer on the flanks of said substrate.Type: ApplicationFiled: January 13, 2023Publication date: July 20, 2023Applicant: STMICROELECTRONICS (TOURS) SASInventors: Nicolas MODE, Ludovic FALLOURD, Laurent BARREAU
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Publication number: 20220344303Abstract: A method for manufacturing electronic chips includes depositing, on a side of an upper face of a semiconductor substrate, in and on which a plurality of integrated circuits has been formed, a protective resin. The method includes forming, in the protective resin, at least one cavity per integrated circuit, in contact with an upper face of the integrated circuit. Metal connection pillars are formed by filling the cavities with metal. The integrated circuits are separated into individual chips by cutting the protective resin along cut lines extending between the metal connection pillars.Type: ApplicationFiled: July 8, 2022Publication date: October 27, 2022Applicant: STMICROELECTRONICS (TOURS) SASInventors: Ludovic FALLOURD, Christophe SERRE
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Patent number: 11393786Abstract: A method for manufacturing electronic chips includes depositing, on a side of an upper face of a semiconductor substrate, in and on which a plurality of integrated circuits has been formed, a protective resin. The method includes forming, in the protective resin, at least one cavity per integrated circuit, in contact with an upper face of the integrated circuit. Metal connection pillars are formed by filling the cavities with metal. The integrated circuits are separated into individual chips by cutting the protective resin along cut lines extending between the metal connection pillars.Type: GrantFiled: December 3, 2020Date of Patent: July 19, 2022Assignee: STMicroelectronics (Tours) SASInventors: Ludovic Fallourd, Christophe Serre
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Patent number: 11393785Abstract: A method for manufacturing electronic chips includes forming, on a side of an upper face of a semiconductor substrate, in and on which a plurality of integrated circuits has been formed, trenches laterally separating the integrated circuits. At least one metal connection pillar per integrated circuit is deposited on the side of the upper face of the substrate, and a protective resin extends in the trenches and on an upper face of the integrated circuits. The method further includes forming, from an upper face of the protective resin, openings located across from the trenches and extending over a width greater than or equal to that of the trenches, so as to clear a flank of at least one metal pillar of each integrated circuit. The integrated circuits are separated into individual chips by cutting.Type: GrantFiled: December 2, 2020Date of Patent: July 19, 2022Assignee: STMicroelectronics (Tours) SASInventors: Ludovic Fallourd, Christophe Serre
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Patent number: 11367913Abstract: The disclosure concerns a battery assembly including two batteries having their active layers facing each other and sharing an encapsulation layer.Type: GrantFiled: February 7, 2019Date of Patent: June 21, 2022Assignee: STMICROELECTRONICS (TOURS) SASInventor: Ludovic Fallourd
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Publication number: 20210175204Abstract: A method for manufacturing electronic chips includes depositing, on a side of an upper face of a semiconductor substrate, in and on which a plurality of integrated circuits has been formed, a protective resin. The method includes forming, in the protective resin, at least one cavity per integrated circuit, in contact with an upper face of the integrated circuit. Metal connection pillars are formed by filling the cavities with metal. The integrated circuits are separated into individual chips by cutting the protective resin along cut lines extending between the metal connection pillars.Type: ApplicationFiled: December 3, 2020Publication date: June 10, 2021Applicant: STMicroelectronics (Tours) SASInventors: Ludovic FALLOURD, Christophe SERRE
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Publication number: 20210175203Abstract: A method for manufacturing electronic chips includes forming, on a side of an upper face of a semiconductor substrate, in and on which a plurality of integrated circuits has been formed, trenches laterally separating the integrated circuits. At least one metal connection pillar per integrated circuit is deposited on the side of the upper face of the substrate, and a protective resin extends in the trenches and on an upper face of the integrated circuits. The method further includes forming, from an upper face of the protective resin, openings located across from the trenches and extending over a width greater than or equal to that of the trenches, so as to clear a flank of at least one metal pillar of each integrated circuit. The integrated circuits are separated into individual chips by cutting.Type: ApplicationFiled: December 2, 2020Publication date: June 10, 2021Applicant: STMicroelectronics (Tours) SASInventors: Ludovic FALLOURD, Christophe SERRE
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Publication number: 20210151347Abstract: The present disclosure relates to a method for manufacturing electronic chips. The method includes forming a plurality of trenches on a first face of a semiconductor substrate, in and on which a plurality of integrated circuits has been formed. The trenches delimit laterally a plurality of chips, and each of the chips includes a single integrated circuit. The method further includes electrically isolating flanks of each of the chips by forming an electrically isolating layer on lateral walls of the trenches.Type: ApplicationFiled: November 17, 2020Publication date: May 20, 2021Inventor: Ludovic FALLOURD
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Patent number: 10637013Abstract: Disclosed herein is an electronic device including a substrate, with an active layer stack on the substrate. A cover is on the active layer stack and has a surface area greater than that of the active layer so as to encapsulate the active layer stack. A conductive pad layer is on the cover. At least one conductive via extends between the active layer stack and the conductive pad layer.Type: GrantFiled: July 10, 2018Date of Patent: April 28, 2020Assignee: STMicroelectronics (Tours) SASInventor: Ludovic Fallourd
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Publication number: 20190252649Abstract: The disclosure concerns a battery assembly including two batteries having their active layers facing each other and sharing an encapsulation layer.Type: ApplicationFiled: February 7, 2019Publication date: August 15, 2019Inventor: Ludovic FALLOURD
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Patent number: 10236480Abstract: Disclosed herein is an electronic device including a substrate, with an active layer stack on the substrate. A cover is on the active layer stack and has a surface area greater than that of the active layer so as to encapsulate the active layer stack. A conductive pad layer is on the cover. At least one conductive via extends between the active layer stack and the conductive pad layer.Type: GrantFiled: July 10, 2018Date of Patent: March 19, 2019Assignee: STMicroelectronics (Tours) SASInventor: Ludovic Fallourd
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Publication number: 20180331332Abstract: Disclosed herein is an electronic device including a substrate, with an active layer stack on the substrate. A cover is on the active layer stack and has a surface area greater than that of the active layer so as to encapsulate the active layer stack. A conductive pad layer is on the cover. At least one conductive via extends between the active layer stack and the conductive pad layer.Type: ApplicationFiled: July 10, 2018Publication date: November 15, 2018Applicant: STMicroelectronics (Tours) SASInventor: Ludovic Fallourd
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Publication number: 20180315965Abstract: Disclosed herein is an electronic device including a substrate, with an active layer stack on the substrate. A cover is on the active layer stack and has a surface area greater than that of the active layer so as to encapsulate the active layer stack. A conductive pad layer is on the cover. At least one conductive via extends between the active layer stack and the conductive pad layer.Type: ApplicationFiled: July 10, 2018Publication date: November 1, 2018Applicant: STMicroelectronics (Tours) SASInventor: Ludovic Fallourd
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Patent number: 10044009Abstract: Disclosed herein is an electronic device including a substrate, with an active layer stack on the substrate. A cover is on the active layer stack and has a surface area greater than that of the active layer so as to encapsulate the active layer stack. A conductive pad layer is on the cover. At least one conductive via extends between the active layer stack and the conductive pad layer.Type: GrantFiled: September 8, 2016Date of Patent: August 7, 2018Assignee: STMicroelectronics (Tours) SASInventor: Ludovic Fallourd
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Publication number: 20180069206Abstract: Disclosed herein is an electronic device including a substrate, with an active layer stack on the substrate. A cover is on the active layer stack and has a surface area greater than that of the active layer so as to encapsulate the active layer stack. A conductive pad layer is on the cover. At least one conductive via extends between the active layer stack and the conductive pad layer.Type: ApplicationFiled: September 8, 2016Publication date: March 8, 2018Applicant: STMicroelectronics (Tours) SASInventor: Ludovic Fallourd