Abstract: An integrated circuit chip carrier includes a wall surrounding a cavity. The wall includes one or more levels where each level is formed from a layer of a resin around a block. The block is made of a material different from the resin. The block is removed to open the cavity.

Abstract: An integrated circuit device includes at least one inductive component with at least one integrated metal winding that is at least partially embedded in a coating. The coating includes at least one ferromagnetic material. The coating optionally includes a non-magnetic material, for example a dielectric.

Abstract: A device for transmission of at least one high-frequency signal includes at least one first electrically-conductive track formed inside and/or on top of a flexible substrate.

Abstract: An electronic product having a silicon-on-insulator substrate, a porous layer of anodic oxide or anodic hydroxide over the silicon layer of the silicon-on-insulator substrate, and a metal layer over the porous layer and that defines at least one electrical transmission line. The velocity of the electrical signal in the at least one electrical transmission line may be controlled by appropriate configuration of the porosity ratio of the porous layer.

Abstract: The invention relates to a method for measuring the permittivity and/or perviousness of a sample of a nonconductive material, said method comprising: a) measuring a value representative of an admittance Ytestco, b) measuring a value representative of an admittance Ytestcc only from the amplitude and the phase of the electromagnetic waves reflected onto an interface between the sample and the end of a second waveguide having at least one conductive web separated from a conductive sheath by a layer of dielectric material, said second waveguide also including a short circuit between the central web and the sheath at the interface with the sample, and c) calculating the permittivity of the sample from the values representative of the admittances Ytestco and Ytestcc and/or calculating the perviousness of the sample from the values representative of the admittances Ytestco and Ytestcc.

Abstract: The invention relates to a method for measuring the permittivity and/or perviousness of a sample of a nonconductive material, said method comprising: a) measuring (94) a value representative of an admittance Ytestco, measuring a (98) a value representative of an admittance Ytestcc only from the amplitude and the phase of the electromagnetic waves reflected onto an interface between the sample and the end of a second waveguide having at least one conductive web separated from a conductive sheath by a layer of dielectric material, said second waveguide also including a short circuit between the central web and the sheath at the interface with the sample, and c) calculating (100) the permittivity of the sample from the values representative of the admittances Ytestco and Ytestcc and/or calculating (100) the perviousness of the sample from the values representative of the admittances Ytestco and Ytestcc.