Patents by Inventor Ludovic R. A. Goux

Ludovic R. A. Goux has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Multiple bit phase change memory cell
    Patent number: 8649213
    Abstract: A phase change memory cell has more than one memory region each being a narrowed region of phase change memory material extending between first and second electrodes. Each of the plurality of memory regions can be programmed to be in a low resistance state or a high resistance state by applying suitable programming conditions of current and/or voltage. The resistances of the high resistance states and the programming conditions to convert the high resistance states to the low resistance state are different in each of the plurality of memory regions.
    Type: Grant
    Filed: March 30, 2009
    Date of Patent: February 11, 2014
    Assignee: NXP B.V.
    Inventors: Ludovic R. A. Goux, Thomas Gille, Judit G. Lisoni, Dirk J. C. C. M. Wouters
  • Vertical phase change memory cell
    Patent number: 8558213
    Abstract: A vertical phase change memory cell (2) has an active region (24) of phase change memory material defined either by providing a contact extending only over part of the phase change memory material or an insulating layer exposing only part of the phase change memory material. There may be more than one active region (24) per cell allowing more than one bit of data to be stored in each cell.
    Type: Grant
    Filed: March 30, 2009
    Date of Patent: October 15, 2013
    Assignee: NXP B.V.
    Inventor: Ludovic R. A. Goux
  • MULTIPLE BIT PHASE CHANGE MEMORY CELL
    Publication number: 20120069645
    Abstract: A phase change memory cell has more than one memory region (14,18) each being a narrowed region of phase change memory material (2) extending between first and second electrodes (4,6). Each of the plurality of memory regions (14, 18) can be programmed to be in a low resistance state or a high resistance state by applying suitable programming conditions of current and/or voltage. The resistances of the high resistance states and the programming conditions to convert the high resistance states to the low resistance state are different in each of the plurality of memory regions.
    Type: Application
    Filed: March 30, 2009
    Publication date: March 22, 2012
    Applicants: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZW, NXP B.V.
    Inventors: Ludovic R.A. Goux, Thomas Gille, Judit G. Lisoni, Dirk J.C.C.M. Wouters
  • VERTICAL PHASE CHANGE MEMORY CELL
    Publication number: 20120018696
    Abstract: A vertical phase change memory cell (2) has an active region (24) of phase change memory material defined either by providing a contact extending only over part of the phase change memory material or an insulating layer exposing only part of the phase change memory material. There may be more than one active region (24) per cell allowing more than one bit of data to be stored in each cell.
    Type: Application
    Filed: March 30, 2009
    Publication date: January 26, 2012
    Applicants: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZW, NXP B.V.
    Inventor: Ludovic R. A. Goux