Abstract: A low-stress packaging structure for a MEMS acceleration sensor chip includes a MEMS sensor chip and a chip carrier. Two sides of the bottom of the sensor chip are provided with a first metal layer and a second metal layer respectively. Two sides of a die attach area of the chip carrier are correspondingly provided with a third metal layer and a fourth metal layer. The first metal layer of the sensor chip and the third metal layer of the chip carrier are bonded together. The second metal layer of the sensor chip and the fourth metal layer of the chip carrier are only in contact but not bonded. A groove is arranged between the first metal layer and the second metal layer at the bottom of the sensor chip. A certain gap is defined between the sensor chip and cavity walls of chip carrier.

Abstract: A low-stress packaging structure for a MEMS acceleration sensor chip includes a MEMS sensor chip and a chip carrier. Two sides of the bottom of the sensor chip are provided with a first metal layer and a second metal layer respectively. Two sides of a die attach area of the chip carrier are correspondingly provided with a third metal layer and a fourth metal layer. The first metal layer of the sensor chip and the third metal layer of the chip carrier are bonded together. The second metal layer of the sensor chip and the fourth metal layer of the chip carrier are only in contact but not bonded. A groove is arranged between the first metal layer and the second metal layer at the bottom of the sensor chip. A certain gap is defined between the sensor chip and cavity walls of chip carrier.

Abstract: The present invention provides a variable area capacitive lateral acceleration sensor and a preparation method. The acceleration sensor at least includes: three-layer stack structure bonded by a first substrate, a second substrate and a third substrate which are electrically isolated with each other, wherein, the second substrate includes a movable seismic mass, a frame surrounded the movable seismic mass, a elastic beam connected to the movable seismic mass and the frame, a plurality of bar structure electrodes positioned on two surfaces of the movable seismic mass, an anti-overloading structure arranged on the movable seismic mass, etc.

Abstract: The present invention provides a capacitive acceleration sensor with a bending elastic beam and a preparation method. The sensor at least includes a first electrode structural layer, a middle structural layer and a second electrode structural layer; wherein the first electrode structural layer and the second electrode structural layer are provided with an electrode lead via-hole, respectively; the middle structural layer includes: a frame formed on a SOI silicon substrate with a double device layers, a seismic mass whose double sides are symmetrical and a bending elastic beam with one end connected to the frame and the other end connected to the seismic mass, wherein anti-overloading bumps and damping grooves are symmetrically provided on two sides of the seismic mass, and the bending elastic beams at different planes are staggered distributed and are not overlapped with each other in space.

Abstract: A capacitive acceleration sensor with an “H”-shaped beam and a preparation method. The sensor at least includes: a first electrode structural layer, a middle structural layer and a second electrode structural layer; the first electrode structural layer and the second electrode structural layer are provided with electrode lead via holes, respectively; the middle structural layer includes: a frame formed at SOI silicon substrate having a double device layer, a seismic mass whose double sides are symmetrical, and an “H”-shaped elastic beam whose double sides are symmetrical, with one end connected to the frame and the other end connected to the seismic mass, there are anti-overloading bumps and damping grooves symmetrically provided on the two sides of the seismic mass, and the “H”-shaped elastic beam and a bulk silicon layer of the oxygen containing silicon substrate satisfy the requirements therebetween: ?{square root over (2)}(a+b+c)<h, ?{square root over (2)}d<h.

Abstract: The present invention provides a variable area capacitive lateral acceleration sensor and a preparation method. The acceleration sensor at least includes: three-layer stack structure bonded by a first substrate, a second substrate and a third substrate which are electrically isolated with each other, wherein, the second substrate includes a movable seismic mass, a frame surrounded the movable seismic mass, a elastic beam connected to the movable seismic mass and the frame, a plurality of bar structure electrodes positioned on two surfaces of the movable seismic mass, an anti-overloading structure arranged on the movable seismic mass, etc.

Abstract: A capacitive acceleration sensor with an “H”-shaped beam and a preparation method. The sensor at least includes: a first electrode structural layer, a middle structural layer and a second electrode structural layer; the first electrode structural layer and the second electrode structural layer are provided with electrode lead via holes, respectively; the middle structural layer includes: a frame formed at SOI silicon substrate having a double device layer, a seismic mass whose double sides are symmetrical, and an “H”-shaped elastic beam whose double sides are symmetrical, with one end connected to the frame and the other end connected to the seismic mass, there are anti-overloading bumps and damping grooves symmetrically provided on the two sides of the seismic mass, and the “H”-shaped elastic beam and a bulk silicon layer of the oxygen containing silicon substrate satisfy the requirements therebetween: ?{square root over (2)}(a+b+c)<h, ?{square root over (2)}d<h.

Abstract: The present invention provides a capacitive acceleration sensor with a bending elastic beam and a preparation method. The sensor at least includes a first electrode structural layer, a middle structural layer and a second electrode structural layer; wherein the first electrode structural layer and the second electrode structural layer are provided with an electrode lead via-hole, respectively; the middle structural layer includes: a frame formed on a SOI silicon substrate with a double device layers, a seismic mass whose double sides are symmetrical and a bending elastic beam with one end connected to the frame and the other end connected to the seismic mass, wherein anti-overloading bumps and damping grooves are symmetrically provided on two sides of the seismic mass, and the bending elastic beams at different planes are staggered distributed and are not overlapped with each other in space.