Abstract: This display device may comprise: a display panel; a stress control layer which is disposed on the rear surface of the display panel and includes an auxetic structure having a negative Poisson's ratio; and a support layer which is disposed under the stress control layer and supports the display panel.

Abstract: The present exemplary embodiments provide a stretchable display which controls an appropriate resolution by disposing a hidden cell below a layer in which an open cell is located using a morphable three-dimensional structure in which LED chips are vertically disposed, rather than a two-dimensional platform of the existing plane, sensing a current change in accordance with a mode switching between a folded mode and a stretched mode while maintaining a state in which an open cell is exposed and the hidden cell is hidden in a folded mode, to automatically turn on/off the hidden cell, and activating the hidden cell in the stretched mode and a manufacturing method thereof.

Abstract: The present exemplary embodiments provide a stretchable display which controls an appropriate resolution by disposing a hidden cell below a layer in which an open cell is located using a morphable three-dimensional structure in which LED chips are vertically disposed, rather than a two-dimensional platform of the existing plane, sensing a current change in accordance with a mode switching between a folded mode and a stretched mode while maintaining a state in which an open cell is exposed and the hidden cell is hidden in a folded mode, to automatically turn on/off the hidden cell, and activating the hidden cell in the stretched mode and a manufacturing method thereof.

Abstract: The inventive concept relates to a light emitting diode integrated with a transition metal dichalcogenide-based transistor and capable of simultaneously fabricating the transistor to have a monolithic integration structure. The transition metal dichalcogenide is formed on the light emitting diode device, thereby providing the light emitting diode integrated with the transistor without affecting the characteristics of the light emitting diode device.

Abstract: The inventive concept relates to a light emitting diode integrated with a transition metal dichalcogenide-based transistor and capable of simultaneously fabricating the transistor to have a monolithic integration structure. The transition metal dichalcogenide is formed on the light emitting diode device, thereby providing the light emitting diode integrated with the transistor without affecting the characteristics of the light emitting diode device.