Abstract: A display panel includes a substrate, a gate electrode disposed on the substrate, a two-dimensional semiconductor material layer overlapping the gate electrode, a source electrode and a drain electrode electrically connected to the two-dimensional semiconductor material layer, a first electrode of a micro light-emitting diode electrically connected to the drain electrode, an active layer electrically connected to the first electrode of the micro light-emitting diode, where the active layer includes a quantum well layer surrounded by an ion-doped insulating partition, and a second electrode of the micro light-emitting diode electrically connected to the active layer.

Abstract: A panel includes: a substrate, unit pixels arranged repeatedly on the substrate, and unit pixel circuits including a unit pixel circuit repeatedly arranged on the substrate and electrically connected to a unit pixel. Each unit pixel includes a red sub-pixel including a red optoelectronic element configured to display red color or detect red light, a green sub-pixel including a green optoelectronic element configured to display green color or detect green light, and a blue sub-pixel including a blue optoelectronic element configured to display blue color or detect blue light. Each unit pixel circuit includes a red pixel circuit electrically connected to the red optoelectronic element, a green pixel circuit electrically connected to the green optoelectronic element, and a blue pixel circuit electrically connected to the blue optoelectronic element. The red pixel circuit, the green pixel circuit, and the blue pixel circuit are stacked along a thickness direction of the substrate.

Abstract: Disclosed are an interconnect structure including a substrate, a metal layer on the substrate, and a passivation layer including a topological compound and in contact with the metal layer.

Abstract: A synthesis method of a 2D material according to the present disclosure includes preparing a substrate; maintaining a first zone of a furnace and a second zone adjacent to the first zone, in which the target substrate is disposed, at a first temperature and a second temperature which is lower than the first temperature; injecting carrier gas, a transition metal precursor, and a chalcogenide precursor into the first zone of the furnace; and depositing transition metal dichalcogenide on the target substrate in the second zone at the second temperature by the chemical vapor deposition.

Abstract: This display device may comprise: a display panel; a stress control layer which is disposed on the rear surface of the display panel and includes an auxetic structure having a negative Poisson's ratio; and a support layer which is disposed under the stress control layer and supports the display panel.

Abstract: The present exemplary embodiments provide a stretchable display which controls an appropriate resolution by disposing a hidden cell below a layer in which an open cell is located using a morphable three-dimensional structure in which LED chips are vertically disposed, rather than a two-dimensional platform of the existing plane, sensing a current change in accordance with a mode switching between a folded mode and a stretched mode while maintaining a state in which an open cell is exposed and the hidden cell is hidden in a folded mode, to automatically turn on/off the hidden cell, and activating the hidden cell in the stretched mode and a manufacturing method thereof.

Abstract: The present exemplary embodiments provide a stretchable display which controls an appropriate resolution by disposing a hidden cell below a layer in which an open cell is located using a morphable three-dimensional structure in which LED chips are vertically disposed, rather than a two-dimensional platform of the existing plane, sensing a current change in accordance with a mode switching between a folded mode and a stretched mode while maintaining a state in which an open cell is exposed and the hidden cell is hidden in a folded mode, to automatically turn on/off the hidden cell, and activating the hidden cell in the stretched mode and a manufacturing method thereof.

Abstract: The inventive concept relates to a light emitting diode integrated with a transition metal dichalcogenide-based transistor and capable of simultaneously fabricating the transistor to have a monolithic integration structure. The transition metal dichalcogenide is formed on the light emitting diode device, thereby providing the light emitting diode integrated with the transistor without affecting the characteristics of the light emitting diode device.

Abstract: The inventive concept relates to a light emitting diode integrated with a transition metal dichalcogenide-based transistor and capable of simultaneously fabricating the transistor to have a monolithic integration structure. The transition metal dichalcogenide is formed on the light emitting diode device, thereby providing the light emitting diode integrated with the transistor without affecting the characteristics of the light emitting diode device.