Abstract: A vertical-conduction MOSFET device, includes: a semiconductor body, having a front side and a back side and having a first conductivity; a trench-gate region; a body region, having the first conductivity; a source region, having a second conductivity; and a drain region, having the second conductivity. The source region, body region, and drain region are aligned with one another along a first direction and define a channel area, which, in a conduction state of the MOSFET device, hosts a conductive channel. The drain region borders on a portion of the semiconductor body having the first conductivity, thus forming a junction diode, which, in an inhibition state of the MOSFET device, is adapted to cause a leakage current to flow outside the channel area.

Abstract: A vertical-conduction MOSFET device, includes: a semiconductor body, having a front side and a back side and having a first conductivity; a trench-gate region; a body region, having the first conductivity; a source region, having a second conductivity; and a drain region, having the second conductivity. The source region, body region, and drain region are aligned with one another along a first direction and define a channel area, which, in a conduction state of the MOSFET device, hosts a conductive channel. The drain region borders on a portion of the semiconductor body having the first conductivity, thus forming a junction diode, which, in an inhibition state of the MOSFET device, is adapted to cause a leakage current to flow outside the channel area.

Abstract: An optoelectronic integrated device includes a body made of semiconductor material, which is delimited by a front surface and includes a substrate having a first type of conductivity, an epitaxial region, which has the first type of conductivity and forms the front surface, and a ring region having a second type of conductivity, which extends into the epitaxial region from the front surface, and delimiting an internal region. The optoelectronic integrated device moreover includes a MOSFET including at least one body region having the second type of conductivity, which contacts the ring region and extends at least in part into the internal region from the front surface. A photodetector includes a photodetector region having the second type of conductivity, and extends into the semiconductor body starting from the front surface, contacting the ring region.

Abstract: An optoelectronic integrated device includes a body made of semiconductor material, which is delimited by a front surface and includes a substrate having a first type of conductivity, an epitaxial region, which has the first type of conductivity and forms the front surface, and a ring region having a second type of conductivity, which extends into the epitaxial region from the front surface, and delimiting an internal region. The optoelectronic integrated device moreover includes a MOSFET including at least one body region having the second type of conductivity, which contacts the ring region and extends at least in part into the internal region from the front surface. A photodetector includes a photodetector region having the second type of conductivity, and extends into the semiconductor body starting from the front surface, contacting the ring region.

Abstract: An electronic device includes a semiconductor substrate of a first conductivity type and a drain layer adjacent the semiconductor substrate and having a plurality of drains. The drain layer includes a first semiconductor layer of the first conductivity type adjacent the semiconductor substrate, and at least one second semiconductor layer of a second conductivity type adjacent the first semiconductor layer. Moreover, a plurality of first column regions of the first conductivity type extends through the at least one second semiconductor layer to contact the first semiconductor layer. A plurality of second column regions of the second conductivity type delimits the plurality of first column regions. Furthermore, a plurality of body regions of the second conductivity type are adjacent respective ones of the plurality of second column regions.

Abstract: An electronic power device for controlling a load includes: a high-voltage integrated switch having an output terminal to be connected to the load; an integrated, and low-voltage driving circuit for driving the switch, and a start-up integrated circuit comprising a high-voltage resistor and such that it can be enabled, during a step of turning on the power device, in order to activate the driving circuit. The switch and the start-up circuit are integrated in a first semiconductor chip and the driving circuit is integrated in a different, second semiconductor chip.

Abstract: An electronic device includes a semiconductor substrate of a first conductivity type and a drain layer adjacent the semiconductor substrate and having a plurality of drains. The drain layer includes a first semiconductor layer of the first conductivity type adjacent the semiconductor substrate, and at least one second semiconductor layer of a second conductivity type adjacent the first semiconductor layer. Moreover, a plurality of first column regions of the first conductivity type extends through the at least one second semiconductor layer to contact the first semiconductor layer. A plurality of second column regions of the second conductivity type delimits the plurality of first column regions. Furthermore, a plurality of body regions of the second conductivity type are adjacent respective ones of the plurality of second column regions.

Abstract: An electronic power device for controlling a load includes: a high-voltage integrated switch having an output terminal to be connected to the load; an integrated, and low-voltage driving circuit for driving the switch, and a start-up integrated circuit comprising a high-voltage resistor and such that it can be enabled, during a step of turning on the power device, in order to activate the driving circuit. The switch and the start-up circuit are integrated in a first semiconductor chip and the driving circuit is integrated in a different, second semiconductor chip.

Abstract: A MOS-type power device having a drain terminal, a source terminal, and a gate terminal; and a protection circuit having a first conduction terminal connected to the gate terminal, via a diffused resistor, and a second conduction terminal connected to the source terminal. The protection circuit has a resistance variable between a first value and a second value according to the operating condition of the power device. In a first embodiment of the protection circuit, an ON-OFF switch made by means of a horizontal MOS transistor has a control terminal connected to the drain terminal of the power device. In a second embodiment of the protection circuit, the ON-OFF switch is replaced with a gradual-intervention switch made by means of a P-channel JFET transistor having a control terminal connected to the gate terminal of the power device.

Abstract: A MOS-type power device having a drain terminal, a source terminal, and a gate terminal; and a protection circuit having a first conduction terminal connected to the gate terminal, via a diffused resistor, and a second conduction terminal connected to the source terminal. The protection circuit has a resistance variable between a first value and a second value according to the operating condition of the power device. In a first embodiment of the protection circuit, an ON-OFF switch made by means of a horizontal MOS transistor has a control terminal connected to the drain terminal of the power device. In a second embodiment of the protection circuit, the ON-OFF switch is replaced with a gradual-intervention switch made by means of a P-channel JFET transistor having a control terminal connected to the gate terminal of the power device.

Abstract: A composition of matter suitable for solidifying radioactive wastes is formed of unsaturated polyester resins comprising a polyester (I) obtained polycondensing (a) maleic anhydride and/or maleic and/or fumaric acid, (b) isophthalic and/or terephthalic acid, (c) neopentylglycol, (d) optionally one or more conventional glycols, wherein the amount of (c) is at least 50% by moles with respect to (c)+(d); another polyester (II) obtained polycondensing (a) maleic anhydride and/or maleic and/or fumaric acid, (b) isopropylidene-bis-(phenylene-oxypropanol-2), (c) optionally one or more conventional glycols, wherein the amount of (b) is at least 50% by moles with respect to (b)+(c); an ethylenically unsaturated monomer (III) capable of copolymerizing with (I) and (II); inhibitors, initiators, accelerators, glass fibers and other conventional additives and fillers the weight ratio of component (I) to (II) being from 100:0 to 20:80.