Abstract: It is described an integrated gas sensor device comprising a silicon substrate and an oxide layer on the silicon substrate, as well as a working electrode, a counter electrode and a reference electrode, on the oxide layer, the working electrode and the counter electrode having respective active area exposed to an environmental air through at least a plurality of first openings and a plurality of second openings in the oxide layer in correspondence of the working electrode and of the counter electrode, further comprising an electrolyte layer portion and a hydrogel layer portion on the electrolyte layer portion, the electrolyte and hydrogel layer portions having a same size, suitable to cover at least the working, counter and reference electrodes, the hydrogel layer portion acting as a “quasi solid state” water reservoir.

Abstract: It is described an integrated gas sensor device comprising a silicon substrate and an oxide layer on the silicon substrate, as well as a working electrode, a counter electrode and a reference electrode, on the oxide layer, the working electrode and the counter electrode having respective active area exposed to an environmental air through at least a plurality of first openings and a plurality of second openings in the oxide layer in correspondence of the working electrode and of the counter electrode, further comprising an electrolyte layer portion and a hydrogel layer portion on the electrolyte layer portion, the electrolyte and hydrogel layer portions having a same size, suitable to cover at least the working, counter and reference electrodes, the hydrogel layer portion acting as a “quasi solid state” water reservoir.

Abstract: A microfluidic device (1000-1005), comprising: a semiconductor body (2) having a first side (2a) and a second side (2b) opposite to one another, and housing, at the first side, a plurality of wells (4), having a first depth; an inlet region (30) forming an entrance point for a fluid to be supplied to the wells; a main channel (6a) fluidically connected to the inlet region, and having a second depth; and a plurality of secondary channels (6b) fluidically connecting the main channel to a respective well, and having a third depth. The first depth is higher than the second depth, which in turn is higher than the third depth.

Abstract: It is described an integrated gas sensor device comprising a silicon substrate and an oxide layer on the silicon substrate, as well as a working electrode, a counter electrode and a reference electrode, on the oxide layer, the working electrode and the counter electrode having respective active area exposed to an environmental air through at least a plurality of first openings and a plurality of second openings in the oxide layer in correspondence of the working electrode and of the counter electrode, further comprising an electrolyte layer portion and a hydrogel layer portion on the electrolyte layer portion, the electrolyte and hydrogel layer portions having a same size, suitable to cover at least the working, counter and reference electrodes, the hydrogel layer portion acting as a “quasi solid state” water reservoir.

Abstract: The present disclosure relates to a sensor for detecting hydrogen ions in an aqueous solution comprising a support, a reference electrode, a working electrode and a counter electrode supported by said support, the reference electrode being made of a material comprising silver and silver chloride, the counter electrode being made of a conductive material. The working electrode comprises a substrate and a layer made of an inherently electrically conductive polymer of the polythiophene or polyaniline (PANI) or polypyrrole class.

Abstract: The present disclosure relates to microstructure devices, in which a conductive pattern is formed on the basis of a conductive polymer material. In order to avoid the deposition and processing of the sacrificial materials and reduce a negative influence of the lithography process on sensitive conductive polymer materials a one-layer patterning sequence is proposed, in which a trench pattern is formed in a dielectric material that is subsequently filled with the conductive polymer material.

Abstract: The present disclosure describes a process strategy for forming bottom gate/bottom contact organic TFTs in CMOS technology by using a hybrid deposition/patterning regime. To this end, gate electrodes, gate dielectric materials and drain and source electrodes are formed on the basis of lithography processes, while the organic semiconductor materials are provided as the last layers by using a spatially selective printing process.

Abstract: A method manufactures a sensor device for sensing a gaseous substance and includes a thin film transistor, which includes a source electrode, a drain electrode and a gate electrode; and an element sensitive to the gaseous substance. In particular, the method includes: forming a first metallic layer on a substrate; defining and patterning the first metallic layer for realizing the gate electrode; depositing a dielectric layer above the gate electrode; depositing a second metallic layer above the layer of dielectric material, defining and patterning the second metallic layer for realizing the source electrode and the drain electrode, and forming the sensitive element by filling a channel region of the thin film transistor with an active layer sensitive to the gaseous substance.

Abstract: It is described an integrated gas sensor device comprising a silicon substrate and an oxide layer on the silicon substrate, as well as a working electrode, a counter electrode and a reference electrode, on the oxide layer, the working electrode and the counter electrode having respective active area exposed to an environmental air through at least a plurality of first openings and a plurality of second openings in the oxide layer in correspondence of the working electrode and of the counter electrode, further comprising an electrolyte layer portion and a hydrogel layer portion on the electrolyte layer portion, the electrolyte and hydrogel layer portions having a same size, suitable to cover at least the working, counter and reference electrodes, the hydrogel layer portion acting as a “quasi solid state” water reservoir.

Abstract: The present disclosure relates to a sensor for detecting hydrogen ions in an aqueous solution comprising a support, a reference electrode, a working electrode and a counter electrode supported by said support, the reference electrode being made of a material comprising silver and silver chloride, the counter electrode being made of a conductive material. The working electrode comprises a substrate and a layer made of an inherently electrically conductive polymer of the polythiophene or polyaniline (PANI) or polypyrrole class.

Abstract: The present disclosure describes a process strategy for forming bottom gate/bottom contact organic TFTs in CMOS technology by using a hybrid deposition/patterning regime. To this end, gate electrodes, gate dielectric materials and drain and source electrodes are formed on the basis of lithography processes, while the organic semiconductor materials are provided as the last layers by using a spatially selective printing process.

Abstract: A method of metal deposition may include chemically modifying a surface of a substrate to make the surface hydrophobic. The method may further include depositing a layer of metal over the hydrophobic surface and masking at least a portion of the deposited metal layer to define a conductive metal structure. The method may also include using an etching agent to etch unmasked portions of the deposited metal layer.

Abstract: The present disclosure relates to mold components and imprint lithography techniques applied on the basis of organic mold materials in order to form polymer microstructure elements. It has been recognized that adapting surface characteristics of at least one mold component may significantly enhance performance of the lithography process, in particular with respect to suppressing residual polymer material, which in conventional strategies may have to be removed on the basis of an additional etch process.

Abstract: The present disclosure relates to microstructure devices, in which a conductive pattern is formed on the basis of a conductive polymer material. In order to avoid the deposition and processing of the sacrificial materials and reduce a negative influence of the lithography process on sensitive conductive polymer materials a one-layer patterning sequence is proposed, in which a trench pattern is formed in a dielectric material that is subsequently filled with the conductive polymer material.

Abstract: A microfluidic device (1000-1005), comprising: a semiconductor body (2) having a first side (2a) and a second side (2b) opposite to one another, and housing, at the first side, a plurality of wells (4), having a first depth; an inlet region (30) forming an entrance point for a fluid to be supplied to the wells; a main channel (6a) fluidically connected to the inlet region, and having a second depth; and a plurality of secondary channels (6b) fluidically connecting the main channel to a respective well, and having a third depth. The first depth is higher than the second depth, which in turn is higher than the third depth.

Abstract: A semiconductor device may have a thickness, such that the semiconductor devices are not flexible, and may be bonded and electrically coupled on a flexible substrate. After this bonding, the semiconductor device may be thinned so as to be rendered flexible.

Abstract: A method manufactures a sensor device for sensing a gaseous substance and includes a thin film transistor, which includes a source electrode, a drain electrode and a gate electrode; and an element sensitive to the gaseous substance. In particular, the method includes: forming a first metallic layer on a substrate; defining and patterning the first metallic layer for realizing the gate electrode; depositing a dielectric layer above the gate electrode; depositing a second metallic layer above the layer of dielectric material, defining and patterning the second metallic layer for realizing the source electrode and the drain electrode, and forming the sensitive element by filling a channel region of the thin film transistor with an active layer sensitive to the gaseous substance.

Abstract: A method is for forming a vertical interconnection through a dielectric layer between upper and lower electrically conductive layers of an integrated circuit. The method includes forming an opening through the dielectric layer and placing a solidifiable electrically conductive filler into the opening via a printing technique. The solidifiable electrically conductive filler is solidified to thereby form a solidified electrically conducting filler in the opening. A metallization layer is formed over the dielectric layer and the solidified electrically conducting filler to thereby form the vertical interconnection through the dielectric layer between the upper and lower electrically conductive layers of the integrated circuit.

Abstract: A method is for forming a vertical interconnection through a dielectric layer between upper and lower electrically conductive layers of an integrated circuit. The method includes forming an opening through the dielectric layer and placing a solidifiable electrically conductive filler into the opening via a printing technique. The solidifiable electrically conductive filler is solidified to thereby form a solidified electrically conducting filler in the opening. A metallization layer is formed over the dielectric layer and the solidified electrically conducting filler to thereby form the vertical interconnection through the dielectric layer between the upper and lower electrically conductive layers of the integrated circuit.

Abstract: A method of metal deposition may include chemically modifying a surface of a substrate to make the surface hydrophobic. The method may further include depositing a layer of metal over the hydrophobic surface and masking at least a portion of the deposited metal layer to define a conductive metal structure. The method may also include using an etching agent to etch unmasked portions of the deposited metal layer.