Abstract: External-cavity optically-pumped semiconductor lasers (OPS-lasers) including an OPS-structure having a mirror-structure surmounted by a surface-emitting, semiconductor multilayer (periodic) gain-structure are disclosed. The gain-structure is pumped by light from diode-lasers. The OPS-lasers can provide fundamental laser output-power of about two Watts (2.0 W) or greater. Intracavity frequency-converted arrangements of the OPS-lasers can provide harmonic laser output-power of about one-hundred milliwatts (100 mW) or greater, even at wavelengths in the ultraviolet region of the electromagnetic spectrum. These high output powers can be provided even in single axial-mode operation.

Abstract: A laser includes a resonator terminated by first and second mirrors and including a gain medium providing fundamental radiation. A first optically-nonlinear element is located in the resonator. The first optically-nonlinear element is cooperatively arranged with the first mirror to provide passive modelocking of the fundamental radiation by sequentially converting a first portion of the circulating fundamental radiation to second-harmonic radiation and reconverting a first portion of the second-harmonic radiation to fundamental radiation. A second optically-nonlinear element is arranged to convert a second portion of the second-harmonic radiation to either third-harmonic radiation or fourth-harmonic radiation.

Abstract: External cavity optically-pumped semiconductor lasers (OPS-lasers) including an OPS-structure having a mirror-structure surmounted by a surface-emitting, semiconductor multilayer (periodic) gain-structure are disclosed. The gain-structure in pumped by light from diode-lasers. The OPS-lasers can provide fundamental laser output-power of about two Watts (2.0 w) or greater. Inactivity frequency-converted arrangements of the OPS-lasers can provide harmonic laser output-power of about one-hundred milliwatts (100 raw) or greater, even at wavelengths in the ultraviolet region of the electromagnetic spectrum. These high output powers can be provided even in single axial-mode operation.

Abstract: A laser system includes a travelling-wave active laser-resonator arranged for generating laser-radiation having a first wavelength and arranged such that the first-wavelength radiation circulates in only one direction therein. An optically-nonlinear element is positioned in the travelling-wave laser-resonator such that the first-wavelength radiation circulates therethrough. Radiation having a second-wavelength is injected into the optically-nonlinear crystal such that the first-wavelength radiation and second-wavelength radiation mix therein, thereby generating radiation having the sum-frequency of the first and second-wavelength radiations. The sum-frequency radiation from the optically-nonlinear element is delivered from the laser system as output-radiation. In one example, the travelling-wave resonator has a YVO4 gain medium generating radiation having a wavelength of about 1064 nm. The optically-nonlinear crystal is a CLBO crystal.

Abstract: A laser system includes a travelling-wave active laser-resonator arranged for generating laser-radiation having a first wavelength and arranged such that the first-wavelength radiation circulates in only one direction therein. An optically-nonlinear element is positioned in the travelling-wave laser-resonator such that the first-wavelength radiation circulates therethrough. Radiation having a second-wavelength is injected into the optically-nonlinear crystal such that the first-wavelength radiation and second-wavelength radiation mix therein, thereby generating radiation having the sum-frequency of the first and second-wavelength radiations. The sum-frequency radiation from the optically-nonlinear element is delivered from the laser system as output-radiation. In one example, the travelling-wave resonator has a YVO4 gain medium generating radiation having a wavelength of about 1064 nm. The optically-nonlinear crystal is a CLBO crystal.

Abstract: A laser for delivering laser radiation at a selected one of a plurality of equally-spaced frequencies extending over a frequency range includes a laser resonator defined by two end mirrors. The resonator includes a surface-emitting semiconductor multilayer gain-structure in optical contact with one of the mirrors. A third mirror located in the laser resonator forms an etalon with that mirror. The third mirror is movable for adjusting a peak transmission frequency of the etalon to align with the selected frequency. The resonator end mirrors are spaced apart by an optical distance selected such that the frequency and frequency-spacing of possible longitudinal lasing modes of the resonator correspond with the plurality of equally-spaced frequencies. When the peak transmission frequency of the etalon is aligned with the selected frequency the laser resonator delivers radiation in a single longitudinal mode at the selected frequency.

Abstract: A laser system includes a travelling-wave active laser-resonator arranged for generating laser-radiation having a first wavelength and arranged such that the first-wavelength radiation circulates in only one direction therein. An optically-nonlinear element is positioned in the travelling-wave laser-resonator such that the first-wavelength radiation circulates therethrough. Radiation having a second-wavelength is injected into the optically-nonlinear crystal such that the first-wavelength radiation and second-wavelength radiation mix therein, thereby generating radiation having the sum-frequency of the first and second-wavelength radiations. The sum-frequency radiation from the optically-nonlinear element is delivered from the laser system as output-radiation. In one example, the travelling-wave resonator has a YVO4 gain medium generating radiation having a wavelength of about 1064 nm. The optically-nonlinear crystal is a CLBO crystal.

Abstract: External-cavity optically-pumped semiconductor lasers (OPS-lasers) including an OPS-structure having a mirror-structure surmounted by a surface-emitting, semiconductor multilayer (periodic) gain-structure are disclosed. The gain-structure is pumped by light from diode-lasers. The OPS-lasers can provide fundamental laser output-power of about two Watts (2.0 W) or greater. Intracavity frequency-converted arrangements of the OPS-lasers can provide harmonic laser output-power of about one-hundred milliwatts (100 mW) or greater, even at wavelengths in the ultraviolet region of the electromagnetic spectrum. These high output powers can be provided even in single axial-mode operation.

Abstract: External-cavity optically-pumped semiconductor lasers (OPS-lasers) including an OPS-structure having a mirror-structure surmounted by a surface-emitting, semiconductor multilayer (periodic) gain-structure are disclosed. The gain-structure is pumped by light from diode-lasers. The OPS-lasers can provide fundamental laser output-power of about two Watts (2.0 W) or greater. Intracavity frequency-converted arrangements of the OPS-lasers can provide harmonic laser output-power of about one-hundred milliwatts (100 mW) or greater, even at wavelengths in the ultraviolet region of the electromagnetic spectrum. These high output powers can be provided even in single axial-mode operation.

Abstract: An intracavity, frequency-doubled, external-cavity, optically-pumped semiconductor laser in accordance with the present invention includes a semiconductor multilayer surface-emitting gain-structure surmounting a Bragg mirror. An external concave mirror and the Bragg-mirror define a stable laser-resonator including the gain-structure. A birefringent filter is located in the resonator, inclined at an angle to the resonator axis, for selecting a fundamental frequency of the laser-radiation within a gain bandwidth characteristic of semiconductor structure. An optically-nonlinear crystal is located in the laser-resonator between the birefringent filter and the gain-structure and arranged to double the selected frequency of laser-radiation. The gain-structure is coated with a dichroic coating which reflects the frequency-doubled radiation and transmits the fundamental radiation and optical pump-light.

Abstract: External-cavity optically-pumped semiconductor lasers (OPS-lasers) including an OPS-structure having a mirror-structure surmounted by a surface-emitting, semiconductor multilayer (periodic) gain-structure are disclosed. The gain-structure is pumped by light from diode-lasers. The OPS-lasers can provide fundamental laser output-power of about two Watts (2.0 W) or greater. Intracavity frequency-converted arrangements of the OPS-lasers can provide harmonic laser output-power of about one-hundred milliwatts (100 mW) or greater, even at wavelengths in the ultraviolet region of the electromagnetic spectrum. These high output powers can be provided even in single axial-mode operation.

Abstract: A laser system includes a travelling-wave active laser-resonator arranged for generating laser-radiation having a first wavelength and arranged such that the first-wavelength radiation circulates in only one direction therein. An optically-nonlinear element is positioned in the travelling-wave laser-resonator such that the first-wavelength radiation circulates therethrough. Radiation having a second-wavelength is injected into the optically-nonlinear crystal such that the first-wavelength radiation and second-wavelength radiation mix therein, thereby generating radiation having the sum-frequency of the first and second-wavelength radiations. The sum-frequency radiation from the optically-nonlinear element is delivered from the laser system as output-radiation. In one example, the travelling-wave resonator has a YVO4 gain medium generating radiation having a wavelength of about 1064 nm. The optically-nonlinear crystal is a CLBO crystal.

Abstract: External-cavity optically-pumped semiconductor lasers (OPS-lasers) including an OPS-structure having a mirror-structure surmounted by a surface-emitting, semiconductor multilayer (periodic) gain-structure are disclosed. The gain-structure is pumped by light from diode-lasers. The OPS-lasers can provide fundamental laser output-power of about two Watts (2.0 W) or greater. Intracavity frequency-converted arrangements of the OPS-lasers can provide harmonic laser output-power of about one-hundred milliwatts (100 mW) or greater, even at wavelengths in the ultraviolet region of the electromagnetic spectrum. These high output powers can be provided even in single axial-mode operation.

Abstract: External-cavity optically-pumped semiconductor lasers (OPS-lasers) including an OPS-structure having a mirror-structure surmounted by a surface-emitting, semiconductor multilayer (periodic) gain-structure are disclosed. The gain-structure is pumped by light from diode-lasers. The OPS-lasers can provide fundamental laser output-power of about two Watts (2.0 W) or greater. Intracavity frequency-converted arrangements of the OPS-lasers can provide harmonic laser output-power of about one-hundred milliwatts (100 mW) or greater, even at wavelengths in the ultraviolet region of the electromagnetic spectrum. These high output powers can be provided even in single axial-mode operation.

Abstract: A laser system includes two separate active laser-resonators. A first of the laser-resonators delivers laser-radiation at a first wavelength, and the second generates fundamental laser-radiation at second wavelength. The second resonator includes an optically-nonlinear crystal. The radiation delivered by the first laser-resonator is mixed in the optically-nonlinear crystal with the fundamental radiation circulating in the second resonator thereby generating radiation having the sum frequency of the first and second wavelengths. In one example, an OPS-laser-resonator having a fundamental wavelength of 976 nm includes a CLBO crystal. 244 nm radiation from an intracavity-frequency-doubled 488 nm argon-ion laser is mixed in the CLBO with the 976 nm radiation to provide 195 nm radiation.

Abstract: An intracavity, frequency-doubled, external-cavity, optically-pumped semiconductor laser in accordance with the present invention includes a monolithic surface-emitting semiconductor layer structure including a Bragg mirror portion and a gain portion. An external mirror and the Bragg-mirror portion define a laser resonant-cavity including the gain-portion of the semiconductor layer structure. A birefringent filter is located in the resonant-cavity for selecting a frequency of the laser-radiation within a gain bandwidth characteristic of semiconductor structure. An optically-nonlinear crystal is located in the resonant-cavity between the birefringent filter and the external mirror and arranged to double the selected frequency of laser-radiation.

Abstract: External-cavity optically-pumped semiconductor lasers (OPS-lasers) including an OPS-structure having a mirror-structure surmounted by a surface-emitting, semiconductor multilayer (periodic) gain-structure are disclosed. The gain-structure is pumped by light from diode-lasers. The OPS-lasers can provide fundamental laser output-power of about two Watts (2.0 W) or greater. Intracavity frequency-converted arrangements of the OPS-lasers can provide harmonic laser output-power of about one-hundred milliwatts (100 mW) or greater, even at wavelengths in the ultraviolet region of the electromagnetic spectrum. These high output powers can be provided even in single axial-mode operation.

Abstract: An intracavity, frequency-doubled, external-cavity, optically-pumped semiconductor laser in accordance with the present invention includes a monolithic surface-emitting semiconductor layer structure including a Bragg mirror portion and a gain portion. An external mirror and the Bragg-mirror portion define a laser resonant-cavity including the gain-portion of the semiconductor layer structure. A birefringent filter is located in the resonant-cavity for selecting a frequency of the laser-radiation within a gain bandwidth characteristic of semiconductor structure. An optically-nonlinear crystal is located in the resonant-cavity between the birefringent filter and the external mirror and arranged to double the selected frequency of laser-radiation.

Abstract: A continuously-pumped, repetitively-pulsed, Q-switched laser resonator includes two different gain-media which lase at about the same wavelength. By separately and variably pumping the different gain-media, the laser resonator can efficiently generate output radiation having parameters which stay constant over a much wider range of pulse-repetition frequency than would be possible were either one of the gain-media solely deployed in the resonator. In one embodiment, the laser resonator includes an arrangement for providing near real-time compensation for variations in thermal-lensing in the gain-media resulting from variations in pump-power or pulse-repetition frequency.

Abstract: A passively mode-locked laser (110) is disclosed that includes a resonant cavity (112, 114) having a gain medium (116) therein. A transmissive element (116), which may be the gain medium, is also located in the cavity and is formed from a material which varies the two-dimensional, lateral spatial profile of the beam with respect to intensity due to the Kerr effect. The resonator is arranged such that the round trip gain of the system increases with respect to the intensity of the beam so that mode-locking operation can be achieved. In one approach, the variation in the spatial profile is used to increase the extraction of energy from the gain medium. In another approach, the variation in spatial profile which occurs with an increase in intensity is used to decrease the loss in the system so that pulse operation is favored.