Patents by Inventor Luis Alberto Colina
Luis Alberto Colina has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230076218Abstract: Methods related to improving a simulation processes and solutions (e.g., retargeted patterns) associated with manufacturing of a chip. A method includes obtaining a plurality of dose-focus settings, and a reference distribution based on measured values of a characteristic of a printed pattern associated with each setting of the plurality of dose-focus settings. The method further includes, based on an adjustment model and the plurality of dose-focus settings, determining a probability density function (PDF) of the characteristic such that an error between the PDF and the reference distribution is reduced. The PDF can be a function of the adjustment model and variance associated with dose, the adjustment model being configured to change a proportion of non-linear dose sensitivity contribution to the PDF. A process window can be adjusted based on the determined PDF of the characteristic.Type: ApplicationFiled: February 18, 2021Publication date: March 9, 2023Applicant: ASML NETHERLANDS B.V.Inventors: Koenraad VAN INGEN SCHENAU, Abraham SLACHTER, Vadim Yourievich TIMOSHKOV, Marleen KOOIMAN, Marie-Claire VAN LARE, Hermanus Adrianus DILLEN, Stefan HUNSCHE, Luis Alberto Colina Sant COLINA, Aiqin JIANG, Fuming WANG, Sudharshanan RAGHUNATHAN
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Patent number: 8780325Abstract: In an embodiment, there is provided a method of at least partially compensating for a deviation in a property of a pattern feature to be applied to a substrate using a lithographic apparatus. The method includes determining a desired phase change to be applied to at least a portion of a radiation beam that is to be used to apply the pattern feature to the substrate and which would at least partially compensate for the deviation in the property. The determination of the desired phase change includes determining a desired configuration of a phase modulation element. The method further includes implementing the desired phase change to the portion of the radiation beam when applying the pattern feature to the substrate, the implementation of the desired phase change comprising illuminating the phase modulation element with the portion of the radiation beam when the phase modulation element is in the desired configuration.Type: GrantFiled: December 11, 2009Date of Patent: July 15, 2014Assignee: ASML Netherlands B.V.Inventors: Luis Alberto Colina Santamaria, Jozef Maria Finders, Laurentius Cornelius De Winter
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Publication number: 20100149508Abstract: In an embodiment, there is provided a method of at least partially compensating for a deviation in a property of a pattern feature to be applied to a substrate using a lithographic apparatus. The method includes determining a desired phase change to be applied to at least a portion of a radiation beam that is to be used to apply the pattern feature to the substrate and which would at least partially compensate for the deviation in the property. The determination of the desired phase change includes determining a desired configuration of a phase modulation element. The method further includes implementing the desired phase change to the portion of the radiation beam when applying the pattern feature to the substrate, the implementation of the desired phase change comprising illuminating the phase modulation element with the portion of the radiation beam when the phase modulation element is in the desired configuration.Type: ApplicationFiled: December 11, 2009Publication date: June 17, 2010Applicant: ASML NETHERLANDS B.V.Inventors: Luis Alberto Colina Santamaria, Jozef Maria Finders, Laurentius Cornelius De Winter
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Publication number: 20090073406Abstract: A mask pattern for imaging a marker structure on a substrate with a lithographic apparatus, the marker structure being configured to determine optical alignment or overlay, includes constituent parts to define the marker structure. The constituent parts include a plurality of segments, each segment having substantially a size of a device feature and a segment shape. The mask pattern includes at least one assist feature located at a critical part of the segment shape. The at least one assist feature has substantially a size below a resolution of the lithographic projection and is configured to counteract optical aberrations or optical limitations generated in the lithographic projection at the critical part.Type: ApplicationFiled: November 5, 2008Publication date: March 19, 2009Applicant: ASML NETHERLANDS B.V.Inventors: Jozef Maria Finders, Mircea Dusa, Richard Johannes Franciscus Van Haren, Luis Alberto Colina Santamaria Colina, Eric Henri Jan Hendrickx, Geert Vandenberghe, Alexander Hendrikus Martinus Van Der Hoff
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Patent number: 7471375Abstract: A method for configuring the optical transfer of a patterning device pattern onto a substrate with a lithographic apparatus is presented. The method includes adjusting an intensity of a first illumination shape relative to a second illumination shape, the first and the second illumination shapes defining respectively a first illumination area and a second illumination area within a pupil plane of an illumination system of the lithographic apparatus, while maintaining the first and second illumination areas substantially constant, and illuminating the patterning device pattern with the first and second illumination shapes.Type: GrantFiled: February 14, 2006Date of Patent: December 30, 2008Assignee: ASML Netherlands B.V.Inventors: Jozef Maria Finders, Luis Alberto Colina Santamaria Colina, Steven George Hansen
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Patent number: 7466413Abstract: A mask pattern for imaging a marker structure on a substrate with a lithographic apparatus, the marker structure being configured to determine optical alignment or overlay, includes constituent parts to define the marker structure. The constituent parts include a plurality of segments, each segment having substantially a size of a device feature and a segment shape. The mask pattern includes at least one assist feature located at a critical part of the segment shape. The at least one assist feature has substantially a size below a resolution of the lithographic projection and is configured to counteract optical aberrations or optical limitations generated in the lithographic projection at the critical part.Type: GrantFiled: July 9, 2004Date of Patent: December 16, 2008Assignee: ASML Netherlands B.V.Inventors: Jozef Maria Finders, Mircea Dusa, Richard Johannes Franciscus Van Haren, Luis Alberto Colina Santamaria Colina, Eric Henri Jan Hendrickx, Geert Vandenberghe, Alexander Hendrikus Martinus Van Der Hoff
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Publication number: 20060192935Abstract: A method for configuring the optical transfer of a patterning device pattern onto a substrate with a lithographic apparatus is presented. The method includes adjusting an intensity of a first illumination shape relative to a second illumination shape, the first and the second illumination shapes defining respectively a first illumination area and a second illumination area within a pupil plane of an illumination system of the lithographic apparatus, while maintaining the first and second illumination areas substantially constant, and illuminating the patterning device pattern with the first and second illumination shapes.Type: ApplicationFiled: February 14, 2006Publication date: August 31, 2006Applicant: ASML NETHERLANDS B.V.Inventors: Steven Hansen, Jozef Finders, Luis Alberto Colina
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Publication number: 20050031969Abstract: A mask pattern for imaging a marker structure on a substrate with a lithographic apparatus, the marker structure being configured to determine optical alignment or overlay, includes constituent parts to define the marker structure. The constituent parts include a plurality of segments, each segment having substantially a size of a device feature and a segment shape. The mask pattern includes at least one assist feature located at a critical part of the segment shape. The at least one assist feature has substantially a size below a resolution of the lithographic projection and is configured to counteract optical aberrations or optical limitations generated in the lithographic projection at the critical part.Type: ApplicationFiled: July 9, 2004Publication date: February 10, 2005Applicant: ASML Netherlands B.V.Inventors: Jozef Finders, Mircea Dusa, Richard Johannes Van Haren, Luis Alberto Colina, Eric Hendrickx, Geert Vandenberghe, Alexander Van Der Hoff