Patents by Inventor Luis CARGNINI
Luis CARGNINI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11579770Abstract: A Memory Device (MD) for storing temporary data designated for volatile storage by a processor and persistent data designated for non-volatile storage by the processor. An address is associated with a first location in a volatile memory array and with a second location in a Non-Volatile Memory (NVM) array of the MD. Data is written in the first location, and flushed from the first location to the second location. A refresh rate for the first location is reduced after flushing the data from the first location until after data is written again to the first location. In another aspect, a processor designates a memory page in a virtual memory space as volatile or non-volatile based on data allocated to the memory page, and defines the volatility mode for the MD based on whether the memory page is designated as volatile or non-volatile.Type: GrantFiled: March 15, 2018Date of Patent: February 14, 2023Assignee: Western Digital Technologies, Inc.Inventors: Viacheslav Dubeyko, Luis Cargnini
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Patent number: 11546272Abstract: Embodiments disclosed herein generally relate to the use of Network-on-Chip architecture for solid state memory structures which provide for the access of memory storage blocks via a router. As such, data may be sent to and/or from the memory storage blocks as data packets on the chip. The Network-on-Chip architecture may further be utilized to interconnect unlimited numbers of memory cell matrices, spread on a die, thus allowing for reduced latencies among matrices, selective power control, unlimited memory density growth without major latency penalties, and reduced parasitic capacitance and resistance. Other benefits may include improved signal integrity, larger die areas available to implement memory arrays, and higher frequency of operation.Type: GrantFiled: September 27, 2021Date of Patent: January 3, 2023Assignee: Western Digital Technologies, Inc.Inventors: Zvonimir Z. Bandic, Luis Cargnini, Dejan Vucinic
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Publication number: 20220014480Abstract: Embodiments disclosed herein generally relate to the use of Network-on-Chip architecture for solid state memory structures which provide for the access of memory storage blocks via a router. As such, data may be sent to and/or from the memory storage blocks as data packets on the chip. The Network-on-Chip architecture may further be utilized to interconnect unlimited numbers of memory cell matrices, spread on a die, thus allowing for reduced latencies among matrices, selective power control, unlimited memory density growth without major latency penalties, and reduced parasitic capacitance and resistance. Other benefits may include improved signal integrity, larger die areas available to implement memory arrays, and higher frequency of operation.Type: ApplicationFiled: September 27, 2021Publication date: January 13, 2022Applicant: Western Digital Technologies, Inc.Inventors: Zvonimir Z. Bandic, Luis Cargnini, Dejan Vucinic
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Patent number: 11165717Abstract: Embodiments disclosed herein generally relate to the use of Network-on-Chip architecture for solid state memory structures, both volatile and non-volatile, which provide for the access of memory storage blocks via a router. As such, data may be sent to and/or from the memory storage blocks as data packets on the chip. The Network-on-Chip architecture may further be utilized to interconnect unlimited numbers of memory cell matrices, spread on a die, thus allowing for reduced latencies among matrices, selective power control, unlimited memory density growth without major latency penalties, and reduced parasitic capacitance and resistance. Other benefits may include improved signal integrity, larger die areas available to implement memory arrays, and higher frequency of operation.Type: GrantFiled: October 26, 2015Date of Patent: November 2, 2021Assignee: Western Digital Technologies, Inc.Inventors: Zvonimir Z. Bandic, Luis Cargnini, Dejan Vucinic
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Patent number: 11157319Abstract: A processor includes processor memory arrays including one or more volatile memory arrays and one or more Non-Volatile Memory (NVM) arrays. Volatile memory locations in the one or more volatile memory arrays are paired with respective NVM locations in the one or more NVM arrays to form processor memory pairs. Process data is stored for different processes executed by at least one core of the processor in respective processor memory pairs. Processes are executed using the at least one core to directly access the process data stored in the respective processor memory pairs.Type: GrantFiled: June 6, 2018Date of Patent: October 26, 2021Assignee: Western Digital Technologies, Inc.Inventors: Viacheslav Dubeyko, Luis Cargnini
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Patent number: 10908847Abstract: A Memory Device (MD) includes a Non-Volatile Memory (NVM) including a first memory array and a second memory array. An address is associated with a first location in the first memory array and with a second location in the second memory array. A read command is received to read data for the address, and it is determined whether data stored in the NVM for the address is persistent. If not, it is determined whether data for the address has been written for the address after a last power-up of the MD. The read command is performed by returning zeroed data if data has not been written for the address after the last power-up. If data has been written after the last power-up, data stored in the first location is returned. In one aspect, a processor sends a command to the MD setting a volatility mode for the MD.Type: GrantFiled: November 21, 2019Date of Patent: February 2, 2021Assignee: Western Digital Technologies, Inc.Inventors: Viacheslav Dubeyko, Luis Cargnini
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Patent number: 10606513Abstract: A Memory Device (MD) includes a configurable Non-Volatile Memory (NVM) including a first memory array and a second memory array. The configurable NVM stores temporary data designated for volatile storage by a Central Processing Unit (CPU) and persistent data designated for non-volatile storage by the CPU. An address is associated with a first location in the first memory array and with a second location in the second memory array. In performing a command to write data for the address, it is determined whether to write the data in the second location based on a volatility mode set for the MD. According to another aspect, a CPU designates a memory page in a virtual memory space as volatile or non-volatile based on data allocated to the memory page, and defines the volatility mode for the MD based on whether the memory page is designated as volatile or non-volatile.Type: GrantFiled: December 6, 2017Date of Patent: March 31, 2020Assignee: Western Digital Technologies, Inc.Inventors: Viacheslav Dubeyko, Luis Cargnini
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Publication number: 20200089435Abstract: A Memory Device (MD) includes a Non-Volatile Memory (NVM) including a first memory array and a second memory array. An address is associated with a first location in the first memory array and with a second location in the second memory array. A read command is received to read data for the address, and it is determined whether data stored in the NVM for the address is persistent. If not, it is determined whether data for the address has been written for the address after a last power-up of the MD. The read command is performed by returning zeroed data if data has not been written for the address after the last power-up. If data has been written after the last power-up, data stored in the first location is returned. In one aspect, a processor sends a command to the MD setting a volatility mode for the MD.Type: ApplicationFiled: November 21, 2019Publication date: March 19, 2020Inventors: Viacheslav Dubeyko, Luis Cargnini
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Publication number: 20190377607Abstract: A processor includes processor memory arrays including one or more volatile memory arrays and one or more Non-Volatile Memory (NVM) arrays. Volatile memory locations in the one or more volatile memory arrays are paired with respective NVM locations in the one or more NVM arrays to form processor memory pairs. Process data is stored for different processes executed by at least one core of the processor in respective processor memory pairs. Processes are executed using the at least one core to directly access the process data stored in the respective processor memory pairs.Type: ApplicationFiled: June 6, 2018Publication date: December 12, 2019Inventors: Viacheslav Dubeyko, Luis Cargnini
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Publication number: 20190286325Abstract: A Memory Device (MD) for storing temporary data designated for volatile storage by a processor and persistent data designated for non-volatile storage by the processor. An address is associated with a first location in a volatile memory array and with a second location in a Non-Volatile Memory (NVM) array of the MD. Data is written in the first location, and flushed from the first location to the second location. A refresh rate for the first location is reduced after flushing the data from the first location until after data is written again to the first location. In another aspect, a processor designates a memory page in a virtual memory space as volatile or non-volatile based on data allocated to the memory page, and defines the volatility mode for the MD based on whether the memory page is designated as volatile or non-volatile.Type: ApplicationFiled: March 15, 2018Publication date: September 19, 2019Inventors: Viacheslav Dubeyko, Luis Cargnini
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Publication number: 20190171391Abstract: A Memory Device (MD) includes a configurable Non-Volatile Memory (NVM) including a first memory array and a second memory array. The configurable NVM stores temporary data designated for volatile storage by a Central Processing Unit (CPU) and persistent data designated for non-volatile storage by the CPU. An address is associated with a first location in the first memory array and with a second location in the second memory array. In performing a command to write data for the address, it is determined whether to write the data in the second location based on a volatility mode set for the MD. According to another aspect, a CPU designates a memory page in a virtual memory space as volatile or non-volatile based on data allocated to the memory page, and defines the volatility mode for the MD based on whether the memory page is designated as volatile or non-volatile.Type: ApplicationFiled: December 6, 2017Publication date: June 6, 2019Inventors: Viacheslav Dubeyko, Luis Cargnini
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Patent number: 10243881Abstract: Embodiments described herein generally relate to the use of three-dimensional solid state memory structures, both volatile and non-volatile, utilizing a Network-on-Chip routing protocol which provide for the access of memory storage via a router. As such, data may be sent to and/or from memory storage as data packets on the chip. The Network-on-Chip routing protocol may be utilized to interconnect unlimited numbers of three-dimensional memory cell matrices, spread on a die, or multiple dies, thus allowing for reduced latencies among matrices, selective power control, unlimited memory density growth without major latency penalties, and reduced parasitic capacitance and resistance. Other benefits include a reduction in total density as compared to two-dimensional solid state memory structures utilizing a Network-on-Chip routing protocol, improved signal integrity, larger die areas, improved bandwidths and higher frequencies of operation.Type: GrantFiled: October 27, 2015Date of Patent: March 26, 2019Assignee: Western Digital Technologies, Inc.Inventors: Zvonimir Z. Bandic, Luis Cargnini, Kurt Allan Rubin, Dejan Vucinic
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Patent number: 10222992Abstract: Embodiments of the present disclosure generally relate to a cloud computing network, or datacenter network, and a method of transferring information among processing nodes in a cloud computing network or datacenter. The network may include a hub that is coupled to a plurality of nodes so that data is transferred between nodes through the hub. Data from different nodes may be written into a slot within the hub, read, and then written into a slot within the destination node. Due to the proximity of the nodes to the hub, or even due to the amount of data to be written, the data may be written at different clock phases. The read may occur one or more clock cycles after the data has been written into the hub.Type: GrantFiled: January 30, 2016Date of Patent: March 5, 2019Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.Inventors: Luis Cargnini, Luiz M. Franca-Neto
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Publication number: 20170220250Abstract: Embodiments of the present disclosure generally relate to a cloud computing network, or datacenter network, and a method of transferring information among processing nodes in a cloud computing network or datacenter. The network may include a hub that is coupled to a plurality of nodes so that data is transferred between nodes through the hub. Data from different nodes may be written into a slot within the hub, read, and then written into a slot within the destination node. Due to the proximity of the nodes to the hub, or even due to the amount of data to be written, the data may be written at different clock phases. The read may occur one or more clock cycles after the data has been written into the hub.Type: ApplicationFiled: January 30, 2016Publication date: August 3, 2017Inventors: Luis CARGNINI, Luiz M. FRANCA-NETO
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Publication number: 20170118111Abstract: Embodiments described herein generally relate to the use of three-dimensional solid state memory structures, both volatile and non-volatile, utilizing a Network-on-Chip routing protocol which provide for the access of memory storage via a router. As such, data may be sent to and/or from memory storage as data packets on the chip. The Network-on-Chip routing protocol may be utilized to interconnect unlimited numbers of three-dimensional memory cell matrices, spread on a die, or multiple dies, thus allowing for reduced latencies among matrices, selective power control, unlimited memory density growth without major latency penalties, and reduced parasitic capacitance and resistance. Other benefits include a reduction in total density as compared to two-dimensional solid state memory structures utilizing a Network-on-Chip routing protocol, improved signal integrity, larger die areas, improved bandwidths and higher frequencies of operation.Type: ApplicationFiled: October 27, 2015Publication date: April 27, 2017Applicant: HGST NETHERLANDS B.V.Inventors: Zvonimir Z. BANDIC, Luis CARGNINI, Kurt Allan RUBIN, Dejan VUCINIC
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Publication number: 20170118139Abstract: Embodiments disclosed herein generally relate to the use of Network-on-Chip architecture for solid state memory structures, both volatile and non-volatile, which provide for the access of memory storage blocks via a router. As such, data may be sent to and/or from the memory storage blocks as data packets on the chip. The Network-on-Chip architecture may further be utilized to interconnect unlimited numbers of memory cell matrices, spread on a die, thus allowing for reduced latencies among matrices, selective power control, unlimited memory density growth without major latency penalties, and reduced parasitic capacitance and resistance. Other benefits may include improved signal integrity, larger die areas available to implement memory arrays, and higher frequency of operation.Type: ApplicationFiled: October 26, 2015Publication date: April 27, 2017Inventors: Zvonimir Z. BANDIC, Luis CARGNINI, Dejan VUCINIC
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Publication number: 20170084818Abstract: The present disclosure generally relates to spin-torque-transfer magnetoresistive random access memory (STT-MRAM) memory cells. In the magnetic tunnel junction (MTJ) of the STT-MRAM memory cell, a 1 nm thick barrier layer having a triclinic crystalline structure is doped with B, N, or C. By applying a positive voltage to the MTJ, the magnetic state of the free layer of the MTJ may be switched. By increasing the voltage applied to the MTJ, the MTJ may change to operate as a ReRAM memory cell, and the crystalline structure of the barrier layer may switch to monoclinic. Before reaching the breakdown voltage, a negative voltage may be applied to the MTJ to switch the crystalline structure of the barrier layer back to triclinic. Once the negative voltage is applied and the crystalline structure of the barrier layer is changed back to triclinic, the MTJ may function as a STT-MRAM cell once again.Type: ApplicationFiled: September 18, 2015Publication date: March 23, 2017Applicant: HGST Netherlands B.V.Inventors: Patrick M. BRAGANCA, Luis CARGNINI, Jordan A. KATINE, Hsin-Wei TSENG