Abstract: Embodiments provide a method for depositing or forming titanium aluminum nitride materials during a vapor deposition process, such as atomic layer deposition (ALD) or plasma-enhanced ALD (PE-ALD). In some embodiments, a titanium aluminum nitride material is formed by sequentially exposing a substrate to a titanium precursor and a nitrogen plasma to form a titanium nitride layer, exposing the titanium nitride layer to a plasma treatment process, and exposing the titanium nitride layer to an aluminum precursor while depositing an aluminum layer thereon. The process may be repeated multiple times to deposit a plurality of titanium nitride and aluminum layers. Subsequently, the substrate may be annealed to form the titanium aluminum nitride material from the plurality of layers. In other embodiments, the titanium aluminum nitride material may be formed by sequentially exposing the substrate to the nitrogen plasma and a deposition gas which contains the titanium and aluminum precursors.