Patents by Inventor Luis Isidro Fernandez

Luis Isidro Fernandez has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and system for dry etching a hafnium containing material
    Patent number: 8183161
    Abstract: A method and system for etching a hafnium containing material using a boron tri-chloride (BCl3) based process chemistry is described. A substrate having a hafnium containing layer, such as a layer of hafnium dioxide (HfO2) is subjected a dry etching process comprising BCl3 and an additive gas including: an oxygen-containing gas, such as O2; or a nitrogen-containing gas, such as N2; or a hydrocarbon gas (CxHy), such as CH4; or a combination of two or more thereof.
    Type: Grant
    Filed: September 12, 2006
    Date of Patent: May 22, 2012
    Assignee: Tokyo Electron Limited
    Inventors: Luis Isidro Fernandez, Masafumi Urakawa
  • Method and system for dry etching a hafnium containing material
    Publication number: 20080064220
    Abstract: A method and system for etching a hafnium containing material using a boron tri-chloride (BCl3) based process chemistry is described. A substrate having a hafnium containing layer, such as a layer of hafnium dioxide (HfO2) is subjected a dry etching process comprising BCl3 and an additive gas including: an oxygen-containing gas, such as O2; or a nitrogen-containing gas, such as N2; or a hydrocarbon gas (CxHy), such as CH4; or a combination of two or more thereof.
    Type: Application
    Filed: September 12, 2006
    Publication date: March 13, 2008
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Luis Isidro Fernandez, Masafumi Urakawa