Abstract: Embodiments disclosed herein include a method of monitoring a photoresist deposition process. In an embodiment, the method comprises depositing a photoresist layer to a first thickness over a substrate, measuring a property of the photoresist layer with a first electromagnetic (EM) radiation source, depositing the photoresist layer to a second thickness over the substrate, and measuring the property of the photoresist layer with the first EM radiation source.

Abstract: Embodiments disclosed herein include a method of optimizing a post deposition bake of a photoresist layer. In an embodiment, the method comprises depositing the photoresist layer on a substrate, baking the photoresist layer, and measuring properties of the photoresist layer with an optical tool.

Abstract: Embodiments of the present disclosure generally relate to methods for providing real-time characterization of photoresist properties. In some embodiments, a method of preparing a patterned photoresist on a substrate includes forming an unpatterned photoresist on the substrate, exposing the unpatterned photoresist to a first dose of EM radiation at a first location on the unpatterned photoresist with a first light source, and measuring an optical property of the unpatterned photoresist and exposing the unpatterned photoresist to a second dose of EM radiation at the first location on the unpatterned photoresist to create a patterned or partially patterned photoresist. The second dose of EM radiation has a greater wavelength, a greater number of pulses, or a longer exposure period than the first dose of EM radiation with a second light source. Also, at least one of the first light source and the second light source is an on-board metrology device.

Abstract: Provided is a system and method for tuning an array of sensors to enable selection of the most suitable sensors for a target application. After extracting features from sensor raw data, the extracted features are ranked with gradient boosting decision trees to assign an importance value to each extracted feature. A threshold value for the entire set of extracted features is calculated and an importance score is calculated for the individual sensors of the array. Individual sensors with an importance score on or above the threshold value are selected for the target application.

Abstract: Provided is a method and system for extracting features from raw data for machine learning processing. Using an array of gas sensors, raw data for at least one compound of interest are extracted based upon the type of output signals. Where the output signals are amplitude-variant, mean features are extracted by chunking the raw data into slices and calculating the mean area under the curve. Where the output signals are amplitude-and-time-variant, mean-plus-slope features are extracted by taking logarithmic values of the raw data and calculating the mean area under the curve.

Abstract: Embodiments disclosed herein include a method of patterning a metal oxo photoresist. In an embodiment, the method comprises depositing the metal oxo photoresist on a substrate, treating the metal oxo photoresist with a first treatment, exposing the metal oxo photoresist with an EUV exposure to form exposed regions and unexposed regions, treating the exposed metal oxo photoresist with a second treatment, and developing the metal oxo photoresist.

Abstract: Provided is a system and method for tuning an array of sensors to enable selection of the most suitable sensors for a target application. After extracting features from sensor raw data, the extracted features are ranked with gradient boosting decision trees to assign an importance value to each extracted feature. A threshold value for the entire set of extracted features is calculated and an importance score is calculated for the individual sensors of the array. Individual sensors with an importance score on or above the threshold value are selected for the target application.

Abstract: Provided is a method and system for extracting features from raw data for machine learning processing. Using an array of gas sensors, raw data for at least one compound of interest are extracted based upon the type of output signals. Where the output signals are amplitude-variant, mean features are extracted by chunking the raw data into slices and calculating the mean area under the curve. Where the output signals are amplitude-and-time-variant, mean-plus-slope features are extracted by taking logarithmic values of the raw data and calculating the mean area under the curve.

Abstract: A polymer comprising recurring units having an acid-eliminatable group on a side chain and aromatic ring-bearing cyclic olefin units is used to formulate a chemically amplified negative resist composition. Any size shift between the irradiated pattern and the formed resist which can arise in forming a pattern including isolated feature and isolated space portions is reduced, and a high resolution is obtained.

Abstract: A polymer comprising recurring units having an acid-eliminatable group on a side chain and aromatic ring-bearing cyclic olefin units is used to formulate a chemically amplified negative resist composition. Any size shift between the irradiated pattern and the formed resist which can arise in forming a pattern including isolated feature and isolated space portions is reduced, and a high resolution is obtained.

Abstract: A method of generating a relief pattern comprises disposing a resist composition on a substrate to form a film, the resist composition comprising a first silsesquioxane polymer of the formula (1): a second silsesquioxane polymer of the formula (2): and a photosensitive acid generator; patternwise exposing the film by e-beam lithography; heating the exposed film to effect crosslinking of the first polymer and second polymer in the exposed area; and developing the exposed film to form a negative relief pattern.

Abstract: A method of generating a relief pattern comprises disposing a resist composition on a substrate to form a film, the resist composition comprising a first silsesquioxane polymer of the formula (1): a second silsesquioxane polymer of the formula (2): and a photosensitive acid generator; patternwise exposing the film by e-beam lithography; heating the exposed film to effect crosslinking of the first polymer and second polymer in the exposed area; and developing the exposed film to form a negative relief pattern.

Abstract: A multi-stable memory or data storage element is used in crosspoint data-storage arrays, as a switch, a memory device, or as a logical device. The general structure of the multi-stable element comprises a layered, composite medium that both transports and stores charge disposed between two electrodes. Dispersed within the composite medium are discrete charge storage particles that trap and store charge. The multi-stable element achieves an exemplary bi-stable characteristic, providing a switchable device that has two or more stable states reliably created by the application of a voltage to the device. The voltages applied to achieve the “on” state, the “off” state, any intermediate state, and to read the state of the multi-stable element are all of the same polarity.

Abstract: A multi-stable memory or data storage element is used in crosspoint data-storage arrays, as a switch, a memory device, or as a logical device. The general structure of the multi-stable element comprises a layered, composite medium that both transports and stores charge disposed between two electrodes. Dispersed within the composite medium are discrete charge storage particles that trap and store charge. The multi-stable element achieves an exemplary bi-stable characteristic, providing a switchable device that has two or more stable states reliably created by the application of a voltage to the device. The voltages applied to achieve the “on” state, the “off” state, any intermediate state, and to read the state of the multi-stable element are all of the same polarity. The multi-stable element is stable, cyclable, and reproducible in both the “on” state and the “off” state. The storage medium has a relatively high resistance in both its on and off states.