Patents by Inventor Luisa Lin

Luisa Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Non-volatile memory with capacitors using metal under signal line or above a device capacitor
    Patent number: 11508654
    Abstract: A non-volatile storage apparatus comprises a non-volatile memory structure and a plurality of I/O pads in communication with the non-volatile memory structure. The I/O pads include a power I/O pad, a ground I/O pad and data/control I/O pads. The non-volatile storage apparatus further comprises one or more capacitors connected to the power I/O pad and the ground I/O pad. The one or more capacitors are positioned in one or more metal interconnect layers below the signal lines and/or above device capacitors on the top surface of the substrate.
    Type: Grant
    Filed: May 28, 2020
    Date of Patent: November 22, 2022
    Assignee: SanDisk Technologies LLC
    Inventors: Luisa Lin, Mohan Dunga, Venkatesh P. Ramachandra, Peter Rabkin, Masaaki Higashitani
  • Non-volatile memory with capacitors using metal under signal line or above a device capacitor
    Patent number: 11444016
    Abstract: A non-volatile storage apparatus comprises a non-volatile memory structure and a plurality of I/O pads in communication with the non-volatile memory structure. The I/O pads include a power I/O pad, a ground I/O pad and data/control I/O pads. The non-volatile storage apparatus further comprises one or more capacitors connected to the power I/O pad and the ground I/O pad. The one or more capacitors are positioned in one or more metal interconnect layers below the signal lines and/or above device capacitors on the top surface of the substrate.
    Type: Grant
    Filed: May 28, 2020
    Date of Patent: September 13, 2022
    Assignee: SanDisk Technologes LLC
    Inventors: Luisa Lin, Mohan Dunga, Venkatesh P. Ramachandra, Peter Rabkin, Masaaki Higashitani
  • Non-volatile memory with capacitors using metal under signal line or above a device capacitor
    Patent number: 10847452
    Abstract: A non-volatile storage apparatus comprises a non-volatile memory structure and a plurality of I/O pads in communication with the non-volatile memory structure. The I/O pads include a power I/O pad, a ground I/O pad and data/control I/O pads. The non-volatile storage apparatus further comprises one or more capacitors connected to the power I/O pad and the ground I/O pad. The one or more capacitors are positioned in one or more metal interconnect layers below the signal lines and/or above device capacitors on the top surface of the substrate.
    Type: Grant
    Filed: October 23, 2018
    Date of Patent: November 24, 2020
    Assignee: SANDISK TECHNOLOGIES LLC
    Inventors: Luisa Lin, Mohan Dunga, Venkatesh P. Ramachandra, Peter Rabkin, Masaaki Higashitani
  • Non-volatile memory with pool capacitor
    Patent number: 10825827
    Abstract: A non-volatile storage apparatus comprises a non-volatile memory structure and an I/O interface. A portion of the memory die is used as a pool capacitor for the I/O interface.
    Type: Grant
    Filed: September 25, 2018
    Date of Patent: November 3, 2020
    Assignee: SANDISK TECHNOLOGIES LLC
    Inventors: Mohan Dunga, James Kai, Venkatesh P. Ramachandra, Piyush Dak, Luisa Lin, Masaaki Higashitani
  • Non-volatile memory with pool capacitor
    Patent number: 10818685
    Abstract: A non-volatile storage apparatus comprises a non-volatile memory structure and an I/O interface. A portion of the memory die is used as a pool capacitor for the I/O interface.
    Type: Grant
    Filed: September 25, 2018
    Date of Patent: October 27, 2020
    Assignee: SANDISK TECHNOLOGIES LLC
    Inventors: Mohan Dunga, James Kai, Venkatesh P. Ramachandra, Piyush Dak, Luisa Lin, Masaaki Higashitani
  • Non-volatile memory with capacitors using metal under pads
    Patent number: 10789992
    Abstract: A non-volatile storage apparatus comprises a non-volatile memory structure and a plurality of I/O pads in communication with the non-volatile memory structure. The I/O pads include a power I/O pad, a ground I/O pad and data/control I/O pads. The non-volatile storage apparatus further comprises one or more capacitors connected to the power I/O pad. The one or more capacitors are positioned in one or more metal interconnect layers below the I/O pads.
    Type: Grant
    Filed: October 23, 2018
    Date of Patent: September 29, 2020
    Assignee: SANDISK TECHNOLOGIES LLC
    Inventors: Luisa Lin, Mohan Dunga, Venkatesh P. Ramachandra, Peter Rabkin, Masaaki Higashitani
  • NON-VOLATILE MEMORY WITH CAPACITORS USING METAL UNDER SIGNAL LINE OR ABOVE A DEVICE CAPACITOR
    Publication number: 20200294909
    Abstract: A non-volatile storage apparatus comprises a non-volatile memory structure and a plurality of I/O pads in communication with the non-volatile memory structure. The I/O pads include a power I/O pad, a ground I/O pad and data/control I/O pads. The non-volatile storage apparatus further comprises one or more capacitors connected to the power I/O pad and the ground I/O pad. The one or more capacitors are positioned in one or more metal interconnect layers below the signal lines and/or above device capacitors on the top surface of the substrate.
    Type: Application
    Filed: May 28, 2020
    Publication date: September 17, 2020
    Applicant: SANDISK TECHNOLOGIES LLC
    Inventors: Luisa Lin, Mohan Dunga, Venkatesh P. Ramachandra, Peter Rabkin, Masaaki Higashitani
  • NON-VOLATILE MEMORY WITH CAPACITORS USING METAL UNDER SIGNAL LINE OR ABOVE A DEVICE CAPACITOR
    Publication number: 20200294910
    Abstract: A non-volatile storage apparatus comprises a non-volatile memory structure and a plurality of I/O pads in communication with the non-volatile memory structure. The I/O pads include a power I/O pad, a ground I/O pad and data/control I/O pads. The non-volatile storage apparatus further comprises one or more capacitors connected to the power I/O pad and the ground I/O pad. The one or more capacitors are positioned in one or more metal interconnect layers below the signal lines and/or above device capacitors on the top surface of the substrate.
    Type: Application
    Filed: May 28, 2020
    Publication date: September 17, 2020
    Applicant: SANDISK TECHNOLOGIES LLC
    Inventors: Luisa Lin, Mohan Dunga, Venkatesh P. Ramachandra, Peter Rabkin, Masaaki Higashitani
  • NON-VOLATILE MEMORY WITH POOL CAPACITOR
    Publication number: 20200013795
    Abstract: A non-volatile storage apparatus comprises a non-volatile memory structure and an I/O interface. A portion of the memory die is used as a pool capacitor for the I/O interface.
    Type: Application
    Filed: September 25, 2018
    Publication date: January 9, 2020
    Applicant: SANDISK TECHNOLOGIES LLC
    Inventors: Mohan Dunga, James Kai, Venkatesh P. Ramachandra, Piyush Dak, Luisa Lin, Masaaki Higashitani
  • NON-VOLATILE MEMORY WITH CAPACITORS USING METAL UNDER PADS
    Publication number: 20200013434
    Abstract: A non-volatile storage apparatus comprises a non-volatile memory structure and a plurality of I/O pads in communication with the non-volatile memory structure. The I/O pads include a power I/O pad, a ground I/O pad and data/control I/O pads. The non-volatile storage apparatus further comprises one or more capacitors connected to the power I/O pad. The one or more capacitors are positioned in one or more metal interconnect layers below the I/O pads.
    Type: Application
    Filed: October 23, 2018
    Publication date: January 9, 2020
    Applicant: SANDISK TECHNOLOGIES LLC
    Inventors: Luisa Lin, Mohan Dunga, Venkatesh P. Ramachandra, Peter Rabkin, Masaaki Higashitani
  • NON-VOLATILE MEMORY WITH CAPACITORS USING METAL UNDER SIGNAL LINE OR ABOVE A DEVICE CAPACITOR
    Publication number: 20200013714
    Abstract: A non-volatile storage apparatus comprises a non-volatile memory structure and a plurality of I/O pads in communication with the non-volatile memory structure. The I/O pads include a power I/O pad, a ground I/O pad and data/control I/O pads. The non-volatile storage apparatus further comprises one or more capacitors connected to the power I/O pad and the ground I/O pad. The one or more capacitors are positioned in one or more metal interconnect layers below the signal lines and/or above device capacitors on the top surface of the substrate.
    Type: Application
    Filed: October 23, 2018
    Publication date: January 9, 2020
    Applicant: SANDISK TECHNOLOGIES LLC
    Inventors: Luisa Lin, Mohan Dunga, Venkatesh P. Ramachandra, Peter Rabkin, Masaaki Higashitani
  • NON-VOLATILE MEMORY WITH POOL CAPACITOR
    Publication number: 20200013794
    Abstract: A non-volatile storage apparatus comprises a non-volatile memory structure and an I/O interface. A portion of the memory die is used as a pool capacitor for the I/O interface.
    Type: Application
    Filed: September 25, 2018
    Publication date: January 9, 2020
    Applicant: SANDISK TECHNOLOGIES LLC
    Inventors: Mohan Dunga, James Kai, Venkatesh P. Ramachandra, Piyush Dak, Luisa Lin, Masaaki Higashitani